公开(公告)号：US07192878B2

公开(公告)日：2007-03-20

申请号：US10908374

申请日：2005-05-09

申请人： Cheng-Ming Weng ,  Miao-Chun Lin ,  Chun-Jen Huang

发明人： Cheng-Ming Weng ,  Miao-Chun Lin ,  Chun-Jen Huang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/02063 ,  H01L21/76811 ,  H01L21/76814 ,  Y10S438/906 ,  Y10S438/963

摘要： A low-k dielectric film is deposited on the wafer. A metal layer is then deposited over the low-k dielectric film. A resist pattern is formed over the metal layer. The resist pattern is then transferred to the underlying metal layer to form a metal pattern. The resist pattern is stripped off. A through hole is plasma etched into the low-k dielectric film by using the metal pattern as a hard mask. The plasma etching causes residues to deposit within the through hole. A first wet treatment is then performed to soften the residues. A plasma dry treatment is carried out to crack the residues. A second wet treatment is performed to completely remove the residues.

摘要翻译： 低k绝缘膜沉积在晶片上。 然后在低k电介质膜上沉积金属层。 在金属层上形成抗蚀剂图案。 然后将抗蚀剂图案转移到下面的金属层以形成金属图案。 剥离抗蚀剂图案。 通过使用金属图案作为硬掩模将通孔等离子体蚀刻到低k电介质膜中。 等离子体蚀刻导致残留物沉积在通孔内。 然后进行第一次湿处理以软化残留物。 进行等离子体干燥处理以破坏残留物。 进行第二次湿处理以完全去除残留物。