摘要:
A detector module for a CT imaging system is provided. The detector module includes a sensor element to convert x-rays to electrical signals. The sensor element is coupled to a data acquisition system (DAS) via an interconnect system, the DAS comprised of an electronic substrate and an integrated circuit. The interconnect system couples the sensor element, electronic substrate, and integrated circuit by way of a contact pad interconnect together with a wire bond interconnect or an additional contact pad interconnect.
摘要:
A diagnostic imaging system includes a high frequency electromagnetic energy source that emits a beam of high frequency electromagnetic energy toward an object to be imaged. An energy discriminating (ED) detector receives high frequency electromagnetic energy emitted by the high frequency electromagnetic energy source. The ED detector includes a first direct conversion layer and a second direct conversion layer. The first direct conversion layer comprises a first direct conversion material and the second direct conversion layer comprises a second direct conversion material that is different from the first direct conversion material. A data acquisition system (DAS) is operably connected to the ED detector and a computer operably connected to the DAS.
摘要:
A diagnostic imaging system includes an x-ray source that emits a beam of x-ray energy toward an object to be imaged and an energy discriminating (ED) detector that receives the x-ray energy emitted by the x-ray energy source. The ED detector includes a first layer having a first thickness, wherein the first layer comprises a semiconductor configurable to operate in at least an integrating mode and a second layer having a second thickness greater than the first thickness, and configured to receive x-rays that pass through the first layer. The system further includes a data acquisition system (DAS) operably connected to the ED detector and a computer that is operably connected to the DAS. The computer is programmed to identify saturated data in the second layer and substitute the saturated data with non-saturated data from a corresponding pixel in the first layer.
摘要:
An adaptive data acquisition circuit (26) includes an amplifier (14) for amplifying electrical pulses generated by a detector (12) responsive to energy incident at the detector. The adaptive data acquisition circuit also includes a counting circuit (28) for counting amplified electrical pulses generated by the amplifier. In addition, the adaptive data acquisition circuit includes a digital logic circuit (30) for determining a pulse parameter indicative of a pulse rate and an amount of energy present in the amplified electrical pulses and for generating a control signal (34) responsive to the pulse parameter for controlling an operating parameter of the data acquisition circuit.
摘要:
A method of scanning a subject to be imaged is presented. The method includes acquiring projection data from a first region of a pixel, where the first region has a first area. Additionally, the method includes acquiring projection data from a second region of the pixel, where the second region has a second area. The method also includes combining projection data from the first and second regions to obtain composite projection data for the pixel. Computer-readable medium and systems that afford functionality of the type defined by this method are also contemplated in conjunction with the present technique.
摘要:
A method for reconstructing image data from measured sinogram data acquired from a CT system is provided. The CT system is configured for industrial imaging. The method includes pre-processing the measured sinogram data. The pre-processing includes performing a beam hardening correction on the measured sinogram data and performing a detector point spread function (PSF) correction and a detector lag correction on the measured sinogram data. The pre-processed sinogram data is reconstructed to generate the image data.
摘要:
A method for reconstructing image data from measured sinogram data acquired from a CT system is provided. The CT system is configured for industrial imaging. The method includes pre-processing the measured sinogram data. The pre-processing includes performing a beam hardening correction on the measured sinogram data and performing a detector point spread function (PSF) correction and a detector lag correction on the measured sinogram data. The pre-processed sinogram data is reconstructed to generate the image data.
摘要:
An apparatus and methods for evaluating the operation of pixelated detectors are provided. The method includes obtaining data values for each of a plurality of pixels of a pixelated detector and determining a data consistency metric for each of the plurality of detector pixels. The method further includes identifying, using the determined data consistency metric, any detector pixels that exceed an acceptance criterion as noisy pixels.
摘要:
An imaging detection system includes at least one location detection device configured to determine coordinates of a target, at least one detector configured to detect events from a source associated with the target, and a processor coupled in communication with the at least one location detection device and the at least one detector. The processor is configured to receive the coordinates from the at least one location detection device and the events from the at least one detector, translate the events using the coordinates acquired from the at least one location detection device to compensate for a relative motion between the source and the at least one detector, and output a processed data set having the events translated based on the coordinates.
摘要:
A radiation detector includes a semiconductor crystal having a first surface and a second surface opposite to the first surface, a first electrode electrically coupled with the first surface of the semiconductor crystal to allow current to flow between the first electrode and the crystal, and an insulating layer on the first surface and between the semiconductor crystal and the first electrode so as to create a partially transmissive electrical barrier between the first electrode and the crystal. The insulating layer has a thickness ranging from about 50 nanometers to about 500 nanometers.