CT detector module construction
    31.
    发明授权
    CT detector module construction 有权
    CT检测器模块结构

    公开(公告)号:US07606346B2

    公开(公告)日:2009-10-20

    申请号:US11619990

    申请日:2007-01-04

    IPC分类号: H05G1/64 G01T1/20 G01T1/24

    摘要: A detector module for a CT imaging system is provided. The detector module includes a sensor element to convert x-rays to electrical signals. The sensor element is coupled to a data acquisition system (DAS) via an interconnect system, the DAS comprised of an electronic substrate and an integrated circuit. The interconnect system couples the sensor element, electronic substrate, and integrated circuit by way of a contact pad interconnect together with a wire bond interconnect or an additional contact pad interconnect.

    摘要翻译: 提供了用于CT成像系统的检测器模块。 检测器模块包括用于将x射线转换成电信号的传感器元件。 传感器元件经由互连系统耦合到数据采集系统(DAS),DAS由电子基板和集成电路组成。 互连系统通过接触焊盘互连与引线接合互连或附加接触焊盘互连将传感器元件,电子基板和集成电路耦合。

    Energy discriminating detector different materials direct conversion layers
    32.
    发明授权
    Energy discriminating detector different materials direct conversion layers 有权
    能量鉴别检测器不同材料直接转换层

    公开(公告)号:US07573040B2

    公开(公告)日:2009-08-11

    申请号:US11690374

    申请日:2007-03-23

    IPC分类号: G01T1/24

    CPC分类号: G01T1/249 G01T1/242

    摘要: A diagnostic imaging system includes a high frequency electromagnetic energy source that emits a beam of high frequency electromagnetic energy toward an object to be imaged. An energy discriminating (ED) detector receives high frequency electromagnetic energy emitted by the high frequency electromagnetic energy source. The ED detector includes a first direct conversion layer and a second direct conversion layer. The first direct conversion layer comprises a first direct conversion material and the second direct conversion layer comprises a second direct conversion material that is different from the first direct conversion material. A data acquisition system (DAS) is operably connected to the ED detector and a computer operably connected to the DAS.

    摘要翻译: 诊断成像系统包括向待成像对象发射高频电磁能束的高频电磁能源。 能量识别(ED)检测器接收由高频电磁能源发出的高频电磁能。 ED检测器包括第一直接转换层和第二直接转换层。 第一直接转换层包括第一直接转换材料,第二直接转换层包括不同于第一直接转换材料的第二直接转换材料。 数据采集​​系统(DAS)可操作地连接到ED检测器和可操作地连接到DAS的计算机。

    METHOD AND SYSTEM OF ENERGY INTEGRATING AND PHOTON COUNTING USING LAYERED PHOTON COUNTING DETECTOR
    33.
    发明申请
    METHOD AND SYSTEM OF ENERGY INTEGRATING AND PHOTON COUNTING USING LAYERED PHOTON COUNTING DETECTOR 失效
    使用层状光子计数检测器的能量积分和光子计数的方法和系统

    公开(公告)号:US20090129538A1

    公开(公告)日:2009-05-21

    申请号:US11941175

    申请日:2007-11-16

    IPC分类号: A61B6/00 G01T1/20

    摘要: A diagnostic imaging system includes an x-ray source that emits a beam of x-ray energy toward an object to be imaged and an energy discriminating (ED) detector that receives the x-ray energy emitted by the x-ray energy source. The ED detector includes a first layer having a first thickness, wherein the first layer comprises a semiconductor configurable to operate in at least an integrating mode and a second layer having a second thickness greater than the first thickness, and configured to receive x-rays that pass through the first layer. The system further includes a data acquisition system (DAS) operably connected to the ED detector and a computer that is operably connected to the DAS. The computer is programmed to identify saturated data in the second layer and substitute the saturated data with non-saturated data from a corresponding pixel in the first layer.

    摘要翻译: 诊断成像系统包括向待成像对象发射X射线能量束的x射线源和接收由x射线能量源发射的x射线能量的能量鉴别(ED)检测器。 ED检测器包括具有第一厚度的第一层,其中第一层包括可配置成至少以积分模式操作的半导体和具有大于第一厚度的第二厚度的第二层,并且被配置为接收x射线, 通过第一层。 该系统还包括可操作地连接到ED检测器的数据采集系统(DAS)和可操作地连接到DAS的计算机。 计算机被编程为识别第二层中的饱和数据,并用来自第一层中的对应像素的非饱和数据替换饱和数据。

    Adaptive data acquisition for an imaging system
    34.
    发明授权
    Adaptive data acquisition for an imaging system 有权
    成像系统的自适应数据采集

    公开(公告)号:US07388534B2

    公开(公告)日:2008-06-17

    申请号:US11458713

    申请日:2006-07-20

    IPC分类号: H03M1/12

    CPC分类号: G01T1/17

    摘要: An adaptive data acquisition circuit (26) includes an amplifier (14) for amplifying electrical pulses generated by a detector (12) responsive to energy incident at the detector. The adaptive data acquisition circuit also includes a counting circuit (28) for counting amplified electrical pulses generated by the amplifier. In addition, the adaptive data acquisition circuit includes a digital logic circuit (30) for determining a pulse parameter indicative of a pulse rate and an amount of energy present in the amplified electrical pulses and for generating a control signal (34) responsive to the pulse parameter for controlling an operating parameter of the data acquisition circuit.

    摘要翻译: 自适应数据采集电路(26)包括放大器(14),用于响应于在检测器处入射的能量放大由检测器(12)产生的电脉冲。 自适应数据采集电路还包括用于对由放大器产生的放大电脉冲进行计数的计数电路(28)。 另外,自适应数据采集电路包括数字逻辑电路(30),用于确定指示放大的电脉冲中存在的脉冲速率和能量的脉冲参数,并产生响应脉冲的控制信号(34) 用于控制数据采集电路的工作参数的参数。

    Method and system for CT reconstruction with pre-correction
    37.
    发明申请
    Method and system for CT reconstruction with pre-correction 失效
    预矫正CT重建方法与系统

    公开(公告)号:US20060067461A1

    公开(公告)日:2006-03-30

    申请号:US10955623

    申请日:2004-09-30

    IPC分类号: H05G1/60 A61B6/00

    摘要: A method for reconstructing image data from measured sinogram data acquired from a CT system is provided. The CT system is configured for industrial imaging. The method includes pre-processing the measured sinogram data. The pre-processing includes performing a beam hardening correction on the measured sinogram data and performing a detector point spread function (PSF) correction and a detector lag correction on the measured sinogram data. The pre-processed sinogram data is reconstructed to generate the image data.

    摘要翻译: 提供了一种用于从CT系统获取的测量的正弦图数据重建图像数据的方法。 CT系统配置为工业成像。 该方法包括预处理测得的正弦图数据。 预处理包括对测量的正弦图数据执行光束硬化校正,并对测量的正弦图数据执行检测器点扩展函数(PSF)校正和检测器滞后校正。 重建预处理的正弦图数据以生成图像数据。

    TARGET-LINKED RADIATION IMAGING SYSTEM
    39.
    发明申请
    TARGET-LINKED RADIATION IMAGING SYSTEM 审中-公开
    目标连接辐射成像系统

    公开(公告)号:US20120008828A1

    公开(公告)日:2012-01-12

    申请号:US13084248

    申请日:2011-04-11

    IPC分类号: G06K9/00

    CPC分类号: G01T7/00 G01V5/0075

    摘要: An imaging detection system includes at least one location detection device configured to determine coordinates of a target, at least one detector configured to detect events from a source associated with the target, and a processor coupled in communication with the at least one location detection device and the at least one detector. The processor is configured to receive the coordinates from the at least one location detection device and the events from the at least one detector, translate the events using the coordinates acquired from the at least one location detection device to compensate for a relative motion between the source and the at least one detector, and output a processed data set having the events translated based on the coordinates.

    摘要翻译: 成像检测系统包括被配置为确定目标的坐标的至少一个位置检测装置,被配置为从与目标相关联的源检测事件的至少一个检测器以及与所述至少一个位置检测装置通信耦合的处理器,以及 所述至少一个检测器。 处理器被配置为从至少一个位置检测装置接收坐标和来自至少一个检测器的事件,使用从至少一个位置检测装置获取的坐标平移事件,以补偿来自源 和所述至少一个检测器,并且输出具有基于坐标转换的事件的经处理的数据集。

    SEMICONDUCTOR CRYSTAL BASED RADIATION DETECTOR AND METHOD OF PRODUCING THE SAME
    40.
    发明申请
    SEMICONDUCTOR CRYSTAL BASED RADIATION DETECTOR AND METHOD OF PRODUCING THE SAME 有权
    基于半导体晶体的辐射探测器及其生产方法

    公开(公告)号:US20110049376A1

    公开(公告)日:2011-03-03

    申请号:US12550921

    申请日:2009-08-31

    IPC分类号: G01T1/24 H01L31/18

    CPC分类号: H01L31/115 H01L31/1185

    摘要: A radiation detector includes a semiconductor crystal having a first surface and a second surface opposite to the first surface, a first electrode electrically coupled with the first surface of the semiconductor crystal to allow current to flow between the first electrode and the crystal, and an insulating layer on the first surface and between the semiconductor crystal and the first electrode so as to create a partially transmissive electrical barrier between the first electrode and the crystal. The insulating layer has a thickness ranging from about 50 nanometers to about 500 nanometers.

    摘要翻译: 辐射检测器包括具有与第一表面相对的第一表面和第二表面的半导体晶体,与半导体晶体的第一表面电耦合以允许电流在第一电极和晶体之间流动的第一电极,以及绝缘 在所述第一表面和所述半导体晶体与所述第一电极之间,以在所述第一电极和所述晶体之间产生部分透射的电屏障。 绝缘层的厚度范围为约50纳米至约500纳米。