Abstract:
There is provided a pattern forming method comprising (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition; (ii) a step of exposing the film; and (iii) a step of performing development by using a developer containing an organic solvent to form a negative pattern, wherein the actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin capable of increasing the polarity by an action of an acid to decrease the solubility in a developer containing an organic solvent, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin having a repeating unit having a fluorine atom and not having a CF3 partial structure.
Abstract:
A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit represented by the following formula (I) or (II) as defined in the specification in an amount of 20 mol % or more based on all repeating units in the resin (P) and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film, so as to form an exposed film; and (iii) a step of developing the exposed film by using a developer containing an organic solvent to form a negative pattern.