公开(公告)号：US11897082B2

公开(公告)日：2024-02-13

申请号：US17472610

申请日：2021-09-11

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Matthew R. Gadinski ,  Joseph So

IPC分类号： B24B37/24 ,  H01L21/321 ,  C08G73/10 ,  G03F7/004 ,  C08G18/28 ,  C08G18/12 ,  C08G18/48 ,  C08G18/50 ,  C08G18/76 ,  C08G18/75 ,  C08G18/72 ,  H01L21/3105

CPC分类号： B24B37/24 ,  C08G18/12 ,  C08G18/285 ,  C08G18/4808 ,  C08G18/4854 ,  C08G18/5015 ,  C08G18/724 ,  C08G18/758 ,  C08G18/7621 ,  C08G73/1017 ,  G03F7/0046 ,  H01L21/3212 ,  H01L21/31053 ,  C08G18/12 ,  C08G18/3814

摘要： The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

公开(公告)号：US20230314956A1

公开(公告)日：2023-10-05

申请号：US18125923

申请日：2023-03-24

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sungkun KANG ,  Chawon KOH ,  Tsunehiro NISHI

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F1/38 ,  H01J37/32

CPC分类号： G03F7/70033 ,  G03F7/0042 ,  G03F7/0025 ,  G03F7/0046 ,  G03F7/168 ,  G03F1/38 ,  H01J37/32458

摘要： A substrate processing method includes forming a layer of an inorganic photoresist composition on a substrate, irradiating the layer of the inorganic photoresist composition with extreme ultraviolet (EUV) light using an exposure mask, baking the layer of the inorganic photoresist composition, which is irradiated with EUV light, developing the layer of the inorganic photoresist composition using a developer to form a first inorganic photoresist pattern, performing plasma treatment on the first inorganic photoresist pattern to form a second inorganic photoresist pattern, and processing the substrate using the second inorganic photoresist pattern as a process mask, wherein the plasma treatment uses plasma of a process gas capable of generating hydrogen ions and fluorine ions.

公开(公告)号：US11739056B2

公开(公告)日：2023-08-29

申请号：US17166322

申请日：2021-02-03

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Tatsuro Masuyama ,  Yukako Anryu ,  Koji Ichikawa

IPC分类号： C07C309/17 ,  G03F7/004 ,  C07C62/24 ,  C07C65/10 ,  C07C381/12 ,  C07D321/10 ,  G03F7/26 ,  G03F7/039 ,  G03F7/11

CPC分类号： C07C309/17 ,  C07C62/24 ,  C07C65/10 ,  C07C381/12 ,  C07D321/10 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/26 ,  C07C2603/74 ,  G03F7/11

摘要： Disclosed are a carboxylate represented by formula (I), and a carboxylic acid generator and a resist composition, including the same:




wherein R1 represents a fluorine atom or a fluorinated alkyl group having 1 to 4 carbon atoms; R2, R3 and R4 each independently represent a halogen atom, a fluorinated alkyl group having 1 to 4 carbon atoms or a hydrocarbon group having 1 to 12 carbon atoms, and —CH2— included in the hydrocarbon group may be replaced by —O— or —CO—; m2 and m3 represent an integer of 0 to 4, and m4 represents an integer of 0 to 5; and X0 represents a hydrocarbon group having 1 to 72 carbon atoms which may have a substituent, and —CH2— included in the hydrocarbon group may be replaced by —O—, —S—, —CO— or —SO2—.

公开(公告)号：US11681220B2

公开(公告)日：2023-06-20

申请号：US17175907

申请日：2021-02-15

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Yukako Anryu ,  Satoshi Yamaguchi ,  Koji Ichikawa

IPC分类号： G03F7/04 ,  C07C25/00 ,  C07C63/70 ,  G03F7/004 ,  C08F212/14 ,  C08F220/28 ,  C08F220/16 ,  C07C25/02 ,  C07C25/13 ,  C07C63/68 ,  C07C63/00 ,  C07C63/10

CPC分类号： G03F7/0045 ,  C07C25/00 ,  C07C25/02 ,  C07C25/13 ,  C07C63/00 ,  C07C63/10 ,  C07C63/68 ,  C07C63/70 ,  C08F212/24 ,  C08F220/16 ,  C08F220/283 ,  G03F7/0046

摘要： Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator:




wherein, in formula (I),



R1 represents a halogen atom or an alkyl fluoride group having 1 to 6 carbon atoms,
m1 represents an integer of 1 to 5, and when m1 is 2 or more, a plurality of R1 may be the same or different from each other.

公开(公告)号：US20190179227A1

公开(公告)日：2019-06-13

申请号：US16256827

申请日：2019-01-24

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JIN PARK ,  HYUN-WOO KIM ,  JIN-KYU HAN

IPC分类号： G03F7/004 ,  C07C381/12 ,  H01L21/768 ,  G03F7/075 ,  H01L29/66 ,  C08G77/48 ,  H01L21/027 ,  G03F7/039 ,  H01L21/3213 ,  H01L21/311

CPC分类号： G03F7/0046 ,  C07C381/12 ,  C08G77/48 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0751 ,  G03F7/0758 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

摘要： A photoresist composition includes a photoresist polymer including a repeating unit to which a silicon-containing leaving group is combined, a photo-fluorine generator including a sulfonium fluoride, and a solvent.

公开(公告)号：US20180348632A1

公开(公告)日：2018-12-06

申请号：US15993194

申请日：2018-05-30

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Tatsuro MASUYAMA ,  Masahiko SHIMADA ,  Koji ICHIKAWA

IPC分类号： G03F7/038 ,  G03F7/039 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  C08F220/16 ,  C08F212/14

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392

摘要： A photoresist composition comprising a resin which comprises a structural unit represented by the formula (I): and a salt represented by the formula (B1):

公开(公告)号：US20180275517A1

公开(公告)日：2018-09-27

申请号：US15924829

申请日：2018-03-19

申请人： Orthogonal, Inc.

发明人： Charles Warren WRIGHT ,  Douglas Robert ROBELLO ,  John Andrew DEFRANCO ,  Diane Carol FREEMAN ,  Frank Xavier BYRNE

IPC分类号： G03F7/038 ,  H01L21/027 ,  G03F7/40 ,  G03F7/30 ,  G03F7/20 ,  C08F220/34 ,  G03F7/004 ,  G03F7/075

CPC分类号： G03F7/0388 ,  C08F220/34 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/038 ,  G03F7/0758 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40 ,  H01L21/0274

摘要： A photosensitive composition is disclosed including a fluorinated photo cross-linkable polymer provided in a fluorinated solvent such as a hydrofluoroether. The photo cross-linkable polymer includes a first repeating unit having a fluorine-containing group but not a cinnamate group, and a second repeating unit having a fluorine-containing cinnamate group. The polymer has a total fluorine content in a range of 30 to 60% by weight. The composition can be used to form patterned barrier or dielectric structures over substrates and devices such as organic electronic devices.

公开(公告)号：US10082733B2

公开(公告)日：2018-09-25

申请号：US15299871

申请日：2016-10-21

申请人： JSR CORPORATION

发明人： Hiroki Nakagawa ,  Hiromitsu Nakashima ,  Gouji Wakamatsu ,  Kentarou Gotou ,  Yukio Nishimura ,  Takeo Shioya

IPC分类号： G03F7/04 ,  G03F7/039 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

CPC分类号： G03F7/0046 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40

摘要： An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).

公开(公告)号：US10073343B2

公开(公告)日：2018-09-11

申请号：US14950342

申请日：2015-11-24

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Tatsuro Masuyama ,  Yuichi Mukai ,  Koji Ichikawa

IPC分类号： G03F7/004 ,  G03F7/38 ,  C08F214/18 ,  G03F7/038 ,  C08F222/10 ,  C08F232/08 ,  C08F224/00 ,  C08F232/02 ,  G03F7/20 ,  C08F220/24 ,  C07C69/75 ,  C07C69/753 ,  C07C69/757 ,  C08F220/22 ,  G03F7/039

CPC分类号： G03F7/0382 ,  C07C69/75 ,  C07C69/753 ,  C07C69/757 ,  C07C2601/14 ,  C07C2603/74 ,  C08F214/18 ,  C08F220/22 ,  C08F220/24 ,  C08F222/10 ,  C08F224/00 ,  C08F232/02 ,  C08F232/08 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38

摘要： A compound which is non-ionic compound, the compound has a group represented by formula (Ia): wherein R2 represents a group having a C3 to C18 alicyclic hydrocarbon group where a methylene group may be replaced by an oxygen atom or a carbonyl group, Rf1 and Rf2 each independently represent a C1 to C4 perfluoroalkyl group, and * represents a binding site.

公开(公告)号：US20180217503A1

公开(公告)日：2018-08-02

申请号：US15937876

申请日：2018-03-28

申请人： FUJIFILM Corporation

发明人： Hideaki TSUBAKI ,  Toru TSUCHIHASHI ,  Wataru NIHASHI ,  Kei YAMAMOTO

IPC分类号： G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/40 ,  H01L21/304 ,  G03F7/038 ,  G03F7/039 ,  G03F7/38

CPC分类号： G03F7/32 ,  G03F7/0043 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/095 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/304

摘要： An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.