公开(公告)号：US20090085103A1

公开(公告)日：2009-04-02

申请号：US11864238

申请日：2007-09-28

申请人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

发明人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813

摘要： A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone.

摘要翻译： 公开了一种半导体器件和制造方法。 在一个实施例中，半导体器件包括位于半导体本体表面上的第一电极和第二电极以及绝缘栅电极。 半导体本体具有用于中间氧化物层中的第一电极的接触槽。 第一导电类型的高掺杂区域位于源极连接区域的边缘区域。 在第一导电类型的高掺杂区之下，存在具有互补导电类型的体区的高掺杂区。 在源极连接区域的中心区域，体区具有互补导电类型的净电荷载流子浓度，该互补导电类型低于源极连接区域的边缘区域中的载流子浓度。

公开(公告)号：US07880200B2

公开(公告)日：2011-02-01

申请号：US11864238

申请日：2007-09-28

申请人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

发明人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

IPC分类号： H01L29/732

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813

摘要： A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone.

摘要翻译： 公开了一种半导体器件和制造方法。 在一个实施例中，半导体器件包括位于半导体本体表面上的第一电极和第二电极以及绝缘栅电极。 半导体本体具有用于中间氧化物层中的第一电极的接触槽。 第一导电类型的高掺杂区域位于源极连接区域的边缘区域。 在第一导电类型的高掺杂区之下，存在具有互补导电类型的体区的高掺杂区。 在源极连接区域的中心区域，体区具有互补导电类型的净电荷载流子浓度，该互补导电类型低于源极连接区域的边缘区域中的载流子浓度。