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    SEMICONDUCTOR DEVICE AND METHOD
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD 有权
    半导体器件和方法

    公开(公告)号：US20090085103A1

    公开(公告)日：2009-04-02

    申请号：US11864238

    申请日：2007-09-28

    申请人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

    发明人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

    IPC分类号： H01L29/94 ,  H01L21/00

    CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813

    摘要： A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone.

    摘要翻译： 公开了一种半导体器件和制造方法。 在一个实施例中，半导体器件包括位于半导体本体表面上的第一电极和第二电极以及绝缘栅电极。 半导体本体具有用于中间氧化物层中的第一电极的接触槽。 第一导电类型的高掺杂区域位于源极连接区域的边缘区域。 在第一导电类型的高掺杂区之下，存在具有互补导电类型的体区的高掺杂区。 在源极连接区域的中心区域，体区具有互补导电类型的净电荷载流子浓度，该互补导电类型低于源极连接区域的边缘区域中的载流子浓度。

    Semiconductor device including a free wheeling diode
    2.
    发明授权
    Semiconductor device including a free wheeling diode 有权
    包括续流二极管的半导体装置

    公开(公告)号：US07880200B2

    公开(公告)日：2011-02-01

    申请号：US11864238

    申请日：2007-09-28

    申请人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

    发明人： Frank Hille ,  Carsten Schaeffer ,  Frank Pfirsch ,  Holger Ruething

    IPC分类号： H01L29/732

    CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813

    摘要： A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone.

    摘要翻译： 公开了一种半导体器件和制造方法。 在一个实施例中，半导体器件包括位于半导体本体表面上的第一电极和第二电极以及绝缘栅电极。 半导体本体具有用于中间氧化物层中的第一电极的接触槽。 第一导电类型的高掺杂区域位于源极连接区域的边缘区域。 在第一导电类型的高掺杂区之下，存在具有互补导电类型的体区的高掺杂区。 在源极连接区域的中心区域，体区具有互补导电类型的净电荷载流子浓度，该互补导电类型低于源极连接区域的边缘区域中的载流子浓度。

    Reverse Conducting IGBT
    3.
    发明申请
    Reverse Conducting IGBT 审中-公开
    反向导通IGBT

    公开(公告)号：US20130341673A1

    公开(公告)日：2013-12-26

    申请号：US13529166

    申请日：2012-06-21

    申请人： Frank Pfirsch ,  Dorothea Werber ,  Anton Mauder ,  Carsten Schaeffer

    发明人： Frank Pfirsch ,  Dorothea Werber ,  Anton Mauder ,  Carsten Schaeffer

    IPC分类号： H01L29/739

    CPC分类号： H03K17/127 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397 ,  H03K3/01 ,  H03K17/66

    摘要： A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first conductivity type, and a drift region of the second conductivity type arranged in a semiconductor body. The first and second emitter regions are arranged between the drift region and a first electrode and are each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source region and the body region. A floating parasitic region of the first conductivity type is disposed outside the cell region.

    摘要翻译： 半导体器件包括第一导电类型的第一发射极区域，与第一导电类型互补的第二导电类型的第二发射极区域和布置在半导体本体中的第二导电类型的漂移区域。 第一和第二发射极区域布置在漂移区域和第一电极之间并且各自连接到第一电极。 单元区域的器件单元包括邻接漂移区的第一导电类型的主体区域，与身体区域邻接的第二导电类型的源极区域和与身体区域相邻并且与身体区域电介质绝缘的栅电极， 栅极电介质。 第二电极电连接到源区域和身体区域。 第一导电类型的浮置寄生区域设置在单元区域的外部。

    Reverse Conducting IGBT
    5.
    发明申请
    Reverse Conducting IGBT 有权
    反向导通IGBT

    公开(公告)号：US20130341674A1

    公开(公告)日：2013-12-26

    申请号：US13529185

    申请日：2012-06-21

    申请人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

    发明人： Dorothea Werber ,  Frank Pfirsch ,  Hans-Joachim Schulze ,  Carsten Schaeffer ,  Volodymyr Komarnitskyy ,  Anton Mauder

    IPC分类号： H01L29/739

    CPC分类号： H01L29/32 ,  H01L21/26506 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8611

    摘要： A semiconductor device includes a first emitter region of a first conductivity type, a second emitter region of a second conductivity type complementary to the first type, a drift region of the second conductivity type, and a first electrode. The first and second emitter regions are arranged between the drift region and first electrode and each connected to the first electrode. A device cell of a cell region includes a body region of the first conductivity type adjoining the drift region, a source region of the second conductivity type adjoining the body region, and a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A second electrode is electrically connected to the source and body regions. A parasitic region of the first conductivity type is disposed outside the cell region and includes at least one section with charge carrier lifetime reduction means.

    摘要翻译： 半导体器件包括第一导电类型的第一发射极区域，与第一类型互补的第二导电类型的第二发射极区域，第二导电类型的漂移区域和第一电极。 第一和第二发射极区域布置在漂移区域和第一电极之间，并且每个连接到第一电极。 单元区域的器件单元包括邻接漂移区的第一导电类型的主体区域，与身体区域邻接的第二导电类型的源极区域和与身体区域相邻并且与身体区域电介质绝缘的栅电极， 栅极电介质。 第二电极电连接到源区和体区。 第一导电类型的寄生区域设置在单元区域的外部，并且包括至少一个带有载流子寿命减少装置的区段。

    Semiconductor device with a field stop zone
    6.
    发明授权
    Semiconductor device with a field stop zone 有权
    具有现场停止区域的半导体器件

    公开(公告)号：US07538412B2

    公开(公告)日：2009-05-26

    申请号：US11480150

    申请日：2006-06-30

    申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Helmut Strack ,  Carsten Schaeffer ,  Frank Pfirsch

    发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Helmut Strack ,  Carsten Schaeffer ,  Frank Pfirsch

    IPC分类号： H01L27/082

    CPC分类号： H01L29/861 ,  H01L29/7396

    摘要： A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a second dopant implant. The first dopant implant has a first dopant concentration maximum and the second dopant implant has a second dopant concentration maximum with the first dopant concentration maximum being less than the second dopant concentration maximum, and being located closer to the second side than the second dopant concentration maximum.

    摘要翻译： 一种半导体器件包括半导体材料，该半导体材料包括一个基极区域和一个具有邻近基极区域的第一侧面和与第一侧相对的第二侧面的场阻挡区域。 场停止区包括第一掺杂剂注入和第二掺杂剂注入。 第一掺杂剂注入具有最大的第一掺杂剂浓度，并且第二掺杂剂注入具有最大的第二掺杂剂浓度，其中第一掺杂剂浓度最大值小于第二掺杂剂浓度最大值，并且位于比第二掺杂剂浓度最大值更靠近第二侧 。

    Semiconductor device with a field stop zone
    7.
    发明申请
    Semiconductor device with a field stop zone 有权
    具有现场停止区域的半导体器件

    公开(公告)号：US20080001257A1

    公开(公告)日：2008-01-03

    申请号：US11480150

    申请日：2006-06-30

    申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Helmut Strack ,  Carsten Schaeffer ,  Frank Pfirsch

    发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Helmut Strack ,  Carsten Schaeffer ,  Frank Pfirsch

    IPC分类号： H01L27/082

    CPC分类号： H01L29/861 ,  H01L29/7396

    摘要： A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a second dopant implant. The first dopant implant has a first dopant concentration maximum and the second dopant implant has a second dopant concentration maximum with the first dopant concentration maximum being less than the second dopant concentration maximum, and being located closer to the second side than the second dopant concentration maximum.

    摘要翻译： 一种半导体器件包括半导体材料，该半导体材料包括一个基极区域和一个具有邻近基极区域的第一侧面和与第一侧相对的第二侧面的场阻挡区域。 场停止区包括第一掺杂剂注入和第二掺杂剂注入。 第一掺杂剂注入具有最大的第一掺杂剂浓度，并且第二掺杂剂注入具有最大的第二掺杂剂浓度，其中第一掺杂剂浓度最大值小于第二掺杂剂浓度最大值，并且位于比第二掺杂剂浓度最大值更靠近第二侧 。

    Semiconductor device and fabrication method
    8.
    发明授权
    Semiconductor device and fabrication method 有权
    半导体器件及其制造方法

    公开(公告)号：US08003502B2

    公开(公告)日：2011-08-23

    申请号：US12416935

    申请日：2009-04-02

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/425

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。

    Semiconductor device and fabrication method
    9.
    发明授权
    Semiconductor device and fabrication method 有权
    半导体器件及其制造方法

    公开(公告)号：US08252671B2

    公开(公告)日：2012-08-28

    申请号：US13186470

    申请日：2011-07-20

    申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Frank Hille ,  Holger Schulze ,  Manfred Pfaffenlehner ,  Carsten Schaeffer ,  Franz-Josef Niedernostheide

    IPC分类号： H01L21/425

    CPC分类号： H01L29/861 ,  H01L21/263 ,  H01L21/265 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7395

    摘要： A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.

    摘要翻译： 一个实施例中的半导体器件具有布置在第一和第二连接区域之间的第一连接区域，第二连接区域和半导体体积。 在第二连接区域的附近，在半导体体积中形成空间电荷区域的场停止区域以及与第一连接区域相邻的阳极区域在半导体体积内设置。 半导体体积内的掺杂剂浓度分布被配置为使得从第二连接区域的面对第二连接区域的阳极区域的界面开始，离子化掺杂剂在半导体体积上的电荷积分到达第二连接区域的方向 与半导体器件的击穿电荷相对应的电荷量仅在靠近第二连接区域的场停止区的界面附近。