公开(公告)号：US06825131B2

公开(公告)日：2004-11-30

申请号：US10339564

申请日：2003-01-10

申请人： Koichi Nishida ,  Yutaka Takeshima ,  Koki Shibuya

发明人： Koichi Nishida ,  Yutaka Takeshima ,  Koki Shibuya

IPC分类号： H01L2131

CPC分类号： H01L21/02282 ,  C23C4/123 ,  C23C4/18 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/31691

摘要： A method for forming a dielectric thin film includes a film deposition step of spraying a material solution onto a heated substrate under a reduced pressure by a two-fluid technique using an inert gas to deposit a thin film. The material solution is supplied at a rate that is greater than the vaporization rate of the solvent in the film deposited on the substrate. The supply of the material solution is stopped and the solvent remaining in the film is vaporized remaining solvent. Then, the film is heat-treated in an oxidizing atmosphere. The substrate is heated to a temperature in the range of about 100° C. to about 300° C. Thus, a dielectric thin film having reliability can be formed even if the film thickness is small.

摘要翻译： 形成电介质薄膜的方法包括：通过使用惰性气体的双流体技术在减压下将材料溶液喷射到加热的基板上以沉积薄膜的膜沉积步骤。 以比沉积在基材上的膜中的溶剂的蒸发速率大的速率供给原料溶液。 停止供给物质溶液，残留在该膜中的溶剂蒸发掉剩余的溶剂。 然后，将膜在氧化气氛中进行热处理。 将基板加热到约100℃至约300℃的温度。因此，即使膜厚度小，也可以形成具有可靠性的电介质薄膜。