Anti-Fuse Element
    1.
    发明申请
    Anti-Fuse Element 有权
    防熔元件

    公开(公告)号:US20120104545A1

    公开(公告)日:2012-05-03

    申请号:US13344662

    申请日:2012-01-06

    IPC分类号: H01L23/525

    摘要: An anti-fuse element that includes a capacitance unit having an insulation layer and at least a pair of electrode layers formed on upper and lower surfaces of the insulation layer. The capacitance unit has a protection function against electrostatic discharge. Because the capacitance unit has a protection function against electrostatic discharge, an anti-fuse element can be provided which is less likely to cause insulation breakdown due to electrostatic discharge at the time of, for example, mounting a component.

    摘要翻译: 一种抗熔丝元件,包括具有绝缘层的电容单元和形成在绝缘层的上表面和下表面上的至少一对电极层。 电容单元具有防静电放电的保护功能。 由于电容单元具有防静电放电的保护功能,所以可以提供抗熔丝元件,其不太可能由于例如安装元件时的静电放电引起绝缘击穿。

    Thin film capacitor and manufacturing method therefor

    公开(公告)号:US07785977B2

    公开(公告)日:2010-08-31

    申请号:US12690480

    申请日:2010-01-20

    IPC分类号: H01L21/02

    摘要: A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor portion. A barrier layer is interposed between the capacitor portion and the resin protective layer. The barrier layer includes a crystalline dielectric barrier layer formed in contact with the capacitor portion and having the same composition system as the dielectric thin film, and an amorphous inorganic barrier layer formed on the surface of the crystalline dielectric barrier layer and composed of silicon nitride having non-conductivity. The inorganic barrier layer prevents deterioration in the properties of the dielectric thin film by blocking diffusion of the constituent elements of the inorganic barrier layer toward the capacitor portion.

    Nonvolatile semiconductor memory device, semiconductor device and method of manufacturing nonvolatile semiconductor memory device
    3.
    发明授权
    Nonvolatile semiconductor memory device, semiconductor device and method of manufacturing nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件,半导体器件和制造非易失性半导体存储器件的方法

    公开(公告)号:US07462905B2

    公开(公告)日:2008-12-09

    申请号:US11495455

    申请日:2006-07-31

    摘要: A nonvolatile semiconductor memory device includes a semiconductor substrate, a first floating gate formed on a main surface of the semiconductor substrate, a second floating gate formed on the main surface of the semiconductor substrate, a first control gate formed on the first floating gate, a second control gate formed on the second floating gate, an interlayer insulating film, and a gap formed in the interlayer insulating film in at least a portion located between the first and second floating gates. Accordingly, a nonvolatile semiconductor memory device for which variations in threshold voltage of a memory cell can be suppressed and an appropriate read operation can be carried out, as well as a method of manufacturing the nonvolatile semiconductor memory device are provided. Further, a capacitance formed between interconnect lines can be reduced and the drive speed can be improved.

    摘要翻译: 非易失性半导体存储器件包括半导体衬底,形成在半导体衬底的主表面上的第一浮置栅极,形成在半导体衬底的主表面上的第二浮置栅极,形成在第一浮动栅极上的第一控制栅极, 形成在第二浮栅上的第二控制栅极,层间绝缘膜,以及形成在位于第一和第二浮栅之间的至少一部分的层间绝缘膜中的间隙。 因此,提供了可以抑制存储单元的阈值电压的变化并且可以执行适当的读取操作的非易失性半导体存储器件以及制造非易失性半导体存储器件的方法。 此外,可以降低在互连线之间形成的电容,并且可以提高驱动速度。

    Method for manufacturing thin-film multilayer electronic component and thin-film multilayer electronic component
    5.
    发明授权
    Method for manufacturing thin-film multilayer electronic component and thin-film multilayer electronic component 有权
    制造薄膜多层电子部件和薄膜多层电子部件的方法

    公开(公告)号:US07180155B2

    公开(公告)日:2007-02-20

    申请号:US10638385

    申请日:2003-08-12

    申请人: Yutaka Takeshima

    发明人: Yutaka Takeshima

    IPC分类号: H01L29/00

    CPC分类号: H01G4/30 H01G4/1218 H01G4/232

    摘要: In a method for manufacturing a thin-film multilayer electronic component, dielectric thin films and thin-film internal electrodes are alternately layered on each other to form a laminate. The thin-film internal electrodes are alternately displaced in a predetermined direction to form an overlap portion. The entire thickness of the laminate and a portion of the thickness of the substrate are cut to form grooves in portions other than the overlap portion, in a direction that is substantially perpendicular to the predetermined direction. External electrodes are formed on at least the cut surfaces of the laminate and the half-cut surfaces of the substrate. Then, the substrate is fully cut in the thickness direction along the grooves such as not to substantially remove the external electrodes.

    摘要翻译: 在制造薄膜多层电子部件的方法中,电介质薄膜和薄膜内部电极彼此交替层叠以形成层压体。 薄膜内部电极沿预定方向交替位移以形成重叠部分。 在基本上垂直于预定方向的方向上,切割层压体的整个厚度和基底的厚度的一部分,以在除了重叠部分之外的部分中形成凹槽。 外部电极形成在层叠体的至少切割面和基板的半切面上。 然后,基板沿着凹槽在厚度方向上完全切割,例如不能基本上去除外部电极。

    Method for manufacturing dielectric thin film capacitor
    7.
    发明申请
    Method for manufacturing dielectric thin film capacitor 有权
    电介质薄膜电容器的制造方法

    公开(公告)号:US20050079670A1

    公开(公告)日:2005-04-14

    申请号:US10933309

    申请日:2004-09-03

    摘要: A method for manufacturing a dielectric thin film capacitor of the present invention includes the steps of coating a liquid raw material on a substrate and performing a first heat treatment to form an adhesive layer, forming a lower electrode on the adhesive layer, coating a liquid raw material on the lower electrode and performing a second heat treatment to form a dielectric thin film by crystallization, forming an upper electrode on the dielectric thin film, and performing a third heat treatment at a temperature higher than those of the first and second heat treatments. The adhesive layer and the dielectric thin film are formed by using materials having the same composition system or using the same material.

    摘要翻译: 本发明的电介质薄膜电容器的制造方法包括以下步骤:在基板上涂布液体原料,进行第一热处理以形成粘合剂层,在粘合剂层上形成下电极,涂布液体原料 进行第二次热处理,通过结晶化形成电介质薄膜,在电介质薄膜上形成上部电极,在比第一次和第二次热处理高的温度下进行第三次热处理。 通过使用具有相同组成系统的材料或使用相同的材​​料形成粘合剂层和电介质薄膜。

    Method of producing complex oxide thin-film and production apparatus
    8.
    发明授权
    Method of producing complex oxide thin-film and production apparatus 有权
    复合氧化物薄膜的制造方法及制造装置

    公开(公告)号:US06803074B2

    公开(公告)日:2004-10-12

    申请号:US09916804

    申请日:2001-07-27

    申请人: Yutaka Takeshima

    发明人: Yutaka Takeshima

    IPC分类号: C23C1600

    摘要: A metal compound solution in the atomized state is introduced directly into a film-forming chamber of which the pressure is maintained at about 100 Torr or lower by mean of a two-fluid nozzle to form a complex oxide thin-film. For use in the two-fluid nozzle, gases including an oxidative gas are used. To dissolve the metal compound, a solvent having a boiling point under ordinary pressure of about 100° C. or higher is used.

    摘要翻译: 将雾化状态的金属化合物溶液直接导入到通过双流体喷嘴维持在约100托或更低的压力的成膜室中,以形成复合氧化物薄膜。 为了在双流体喷嘴中使用,使用包括氧化气体的气体。 为了溶解金属化合物,使用沸点在常压约100℃以上的溶剂。

    Anti-fuse element
    9.
    发明授权
    Anti-fuse element 有权
    防熔丝元件

    公开(公告)号:US08896092B2

    公开(公告)日:2014-11-25

    申请号:US13344662

    申请日:2012-01-06

    摘要: An anti-fuse element that includes a capacitance unit having an insulation layer and at least a pair of electrode layers formed on upper and lower surfaces of the insulation layer. The capacitance unit has a protection function against electrostatic discharge. Because the capacitance unit has a protection function against electrostatic discharge, an anti-fuse element can be provided which is less likely to cause insulation breakdown due to electrostatic discharge at the time of, for example, mounting a component.

    摘要翻译: 一种抗熔丝元件,包括具有绝缘层的电容单元和形成在绝缘层的上表面和下表面上的至少一对电极层。 电容单元具有防静电放电的保护功能。 由于电容单元具有防静电放电的保护功能,所以可以提供抗熔丝元件,其不太可能由于例如安装元件时的静电放电引起绝缘击穿。

    Thin Film Capacitor and Manufacturing Method Therefor
    10.
    发明申请
    Thin Film Capacitor and Manufacturing Method Therefor 有权
    薄膜电容器及其制造方法

    公开(公告)号:US20100118468A1

    公开(公告)日:2010-05-13

    申请号:US12690480

    申请日:2010-01-20

    IPC分类号: H01G4/20 H01G4/00

    摘要: A thin film capacitor including a substrate, a capacitor portion having an upper conductor, a lower conductor, and a dielectric thin film, and a resin protective layer for protecting the capacitor portion. A barrier layer is interposed between the capacitor portion and the resin protective layer. The barrier layer includes a crystalline dielectric barrier layer formed in contact with the capacitor portion and having the same composition system as the dielectric thin film, and an amorphous inorganic barrier layer formed on the surface of the crystalline dielectric barrier layer and composed of silicon nitride having non-conductivity. The inorganic barrier layer prevents deterioration in the properties of the dielectric thin film by blocking diffusion of the constituent elements of the inorganic barrier layer toward the capacitor portion.

    摘要翻译: 包括基板,具有上导体的电容器部分,下导体和电介质薄膜的薄膜电容器和用于保护电容器部分的树脂保护层。 在电容器部分和树脂保护层之间插入阻挡层。 阻挡层包括形成为与电容器部分接触并且具有与电介质薄膜相同的组成系统的结晶介质阻挡层,以及形成在结晶介质阻挡层的表面上并由氮化硅构成的无定形无机阻挡层, 非导电性。 无机阻挡层通过阻止无机阻挡层的构成元件朝向电容器部分的扩散来防止电介质薄膜的性质的劣化。