公开(公告)号：US20220199619A1

公开(公告)日：2022-06-23

申请号：US17133208

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Ashish Verma Penumatcha ,  Seung Hoon Sung ,  Jack Kavalieros ,  Uygar Avci ,  Tristan Tronic ,  Shriram Shivaraman ,  Devin Merrill ,  Tobias Brown-Heft ,  Kirby Maxey ,  Matthew Metz ,  Ian Young

IPC: H01L27/092 ,  H01L27/22 ,  H01L27/24 ,  H01L43/02 ,  H01L43/08 ,  H01L45/00 ,  H01L43/12

Abstract: A complementary metal oxide semiconductor (CMOS) transistor includes a first transistor with a first gate dielectric layer above a first channel, where the first gate dielectric layer includes Hf1-xZxO2, where 0.33