公开(公告)号：US10224260B2

公开(公告)日：2019-03-05

申请号：US14090019

申请日：2013-11-26

Applicant: Infineon Technologies AG

Inventor： Chee Yang Ng

IPC: H01L23/31 ,  B81C1/00 ,  B81C99/00

Abstract: A semiconductor package includes a semiconductor die having a first main side and a second main side opposite the first main side, the first main side having an inner region surrounded by a periphery region. The semiconductor package further includes a film covering the semiconductor die and adhered to the periphery region of the first main side of the semiconductor die. The film has a curved surface so that the inner region of the first main side of the semiconductor die is spaced apart from the film by an air gap. Electrical conductors are attached at a first end to pads at the periphery region of the first main side of the semiconductor die. A corresponding method of manufacture is also provided.

公开(公告)号：US10109592B2

公开(公告)日：2018-10-23

申请号：US14089971

申请日：2013-11-26

Applicant: Infineon Technologies AG

Inventor： Chee Yang Ng

IPC: H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L23/495 ,  H01L21/56

Abstract: A semiconductor device includes a semiconductor chip having a first main surface, a second main surface opposite to the first main surface, and a side wall surface. An electrical contact area is exposed at the side wall surface of the semiconductor chip. An electrically conducting layer covers at least partially the second main surface and the electrical contact area.

公开(公告)号：US09628918B2

公开(公告)日：2017-04-18

申请号：US14088747

申请日：2013-11-25

Applicant: Infineon Technologies AG

Inventor： Chee Yang Ng

IPC: H04R19/00 ,  B81C1/00 ,  H04R19/04

CPC classification number: H04R19/005 ,  B81B2201/0257 ,  B81C1/0023 ,  B81C1/00238 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48471 ,  H04R19/04 ,  H04R2499/11 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor device includes a microphone module implemented on a first semiconductor die and a signal processing module implemented on a second semiconductor die. The microphone module includes a movable microphone element arranged at a main side of the first semiconductor die and the second semiconductor die is mounted to the main side of the first semiconductor die.

公开(公告)号：US20150028463A1

公开(公告)日：2015-01-29

申请号：US13951549

申请日：2013-07-26

Applicant: Infineon Technologies AG

Inventor： Chee Yang Ng

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/28

CPC classification number: H01L23/49503 ,  H01L21/4853 ,  H01L21/56 ,  H01L23/28 ,  H01L23/3121 ,  H01L23/49531 ,  H01L23/49575 ,  H01L23/49816 ,  H01L23/49822 ,  H01L25/16 ,  H01L2224/48137

Abstract: An integrated passives package includes an encapsulation compound and a plurality of electrically conductive pads embedded in the encapsulation compound. Each of the pads has opposing first and second sides. The first side of the pads is uncovered by the encapsulation compound and forms array of external electrical connections at a first side of the package. The integrated passives package further includes a plurality of passive components embedded in the encapsulation compound. Each of the passive components has a first terminal attached to one of the pads and a second terminal attached to a different one the pads at the second side of the pads. Corresponding semiconductor modules and methods of manufacturing are also provided.

Abstract translation: 集成无源器件封装包括封装化合物和嵌入在封装化合物中的多个导电焊盘。 每个垫具有相对的第一和第二面。 衬垫的第一侧被封装化合物覆盖，并在封装的第一侧形成外部电连接的阵列。 集成无源组件还包括嵌入在封装化合物中的多个无源部件。 每个无源部件具有附接到焊盘之一的第一端子和附接到焊盘第二侧上的不同焊盘的第二端子。 还提供了相应的半导体模块和制造方法。