SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

    公开(公告)号:US20220068750A1

    公开(公告)日:2022-03-03

    申请号:US17090921

    申请日:2020-11-06

    Abstract: A device including a package substrate and a heat spreader may be provided. The package substrate may include a first surface and an opposing second surface. The package substrate may include a recess extending from the first surface, and a cavity extending from the second surface to the recess. The heat spreader may include a first portion and a second portion arranged on the first portion. The first portion may be arranged within the cavity, and the second portion may be at least partially arranged on the second surface of the package substrate

    SEMICONDUCTOR SYSTEM AND METHOD OF FORMING SEMICONDUCTOR SYSTEM

    公开(公告)号:US20220068740A1

    公开(公告)日:2022-03-03

    申请号:US17088621

    申请日:2020-11-04

    Abstract: According to various examples, a device is described. The device may include a printed circuit board. The device may include a semiconductor package including an interposer with a molded portion, and one or more of semiconductor devices. The one or more semiconductor devices may have at least a first device coupled to the molded portion. The device may include a first connector coupled to the molded portion, and a second connector coupled to the printed circuit board, the first connector and the second connector configured to be connected with a cable for signal connection between the first device and the printed circuit board.

    Hybrid Boards with Embedded Planes
    33.
    发明申请

    公开(公告)号:US20210410273A1

    公开(公告)日:2021-12-30

    申请号:US17367674

    申请日:2021-07-06

    Abstract: The present disclosure is directed to a hybrid dielectric interconnect stack for a printed circuit board having a first dielectric layer with a first dielectric constant and a first dielectric loss tangent positioned over an intermediate layer, which includes a first dielectric sublayer with a first sublayer dielectric constant and a first sublayer dielectric loss tangent, an embedded conductive layer, and a second dielectric sublayer with a second sublayer dielectric constant and a second sublayer dielectric loss tangent, in which the embedded conductive layer is positioned between the first and second dielectric sublayers, and a second dielectric layer with a second dielectric constant and a second dielectric loss tangent, in which the intermediate layer is positioned between the first and second dielectric layers.

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