公开(公告)号：US08716837B2

公开(公告)日：2014-05-06

申请号：US13758204

申请日：2013-02-04

申请人： International Business Machines Corporation

发明人： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

IPC分类号： H01L21/02 ,  H01L21/331

CPC分类号： H01L29/73 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0821 ,  H01L29/107 ,  H01L29/66272 ,  H01L29/7322

摘要： Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An emitter opening extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer that physically links the extrinsic base and the intrinsic base together.

摘要翻译： 用于制造双极结型晶体管的方法，通过该方法制造的双极结型晶体管以及双极结型晶体管的设计结构。 双极结晶体管包括在本征基极上的电介质层和通过电介质层至少部分地与本征基极分离的外部基极。 发射极开口延伸穿过外部基极和电介质层。 电介质层相对于发射器开口横向凹入以限定内部基极和外部基极之间的腔。 空腔填充有将外部基极和内在基极物理连接在一起的半导体层。

公开(公告)号：US20130313607A1

公开(公告)日：2013-11-28

申请号：US13956795

申请日：2013-08-01

申请人： International Business Machines Corporation

发明人： Renata Camillo-Castillo ,  Erik M. Dahlstrom ,  Robert J. Gauthier, JR. ,  Ephrem G. Gebreselasie ,  Richard A. Phelps ,  Yun Shi ,  Andreas D. Stricker

IPC分类号： H01L29/73

CPC分类号： H01L29/7315 ,  G06F17/5063 ,  H01L27/0262 ,  H01L29/66393 ,  H01L29/7436

摘要： Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR. The device and design structures include a SCR with an anode, a cathode, a first region, and a second region of opposite conductivity type to the first region. The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR. A layer is positioned on a top surface of a semiconductor substrate relative to the first region and configured to cause a mechanical stress in the first region of the SCR at a level sufficient to modulate a trigger current of the SCR.

摘要翻译： 可控硅整流器的器件结构，制造方法，操作方法和设计结构。 该方法包括以足以调节SCR的触发电流的水平对可控硅整流器（SCR）的区域施加机械应力。 装置和设计结构包括具有阳极的SCR，阴极，第一区域和与第一区域相反的导电类型的第二区域。 SCR的第一和第二区域设置在SCR的阳极和阴极之间的通电路径中。 层相对于第一区域定位在半导体衬底的顶表面上，并且被配置为在SCR的第一区域中产生一个足以调节SCR的触发电流的电平的机械应力。