公开(公告)号：US4774630A

公开(公告)日：1988-09-27

申请号：US781981

申请日：1985-09-30

Applicant: Arnold Reisman ,  Carlton M. Osburn ,  Lih-Tyng Hwang ,  Jagdish Narayan

Inventor： Arnold Reisman ,  Carlton M. Osburn ,  Lih-Tyng Hwang ,  Jagdish Narayan

IPC: H01L23/32 ,  G02B6/42 ,  H01L21/60 ,  H01L23/473 ,  H01L23/498 ,  H01R33/76 ,  H05K7/10 ,  H02B1/00

CPC classification number: H01L24/80 ,  G02B6/42 ,  H01L23/473 ,  H01L23/498 ,  H05K7/1061 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3025

Abstract: Apparatus for mounting a semiconductor device chip and making electrical connections thereto is disclosed. A semiconductor device chip has its backside connected to the surface of a substrate, and its upper surface includes a plurality of electrical pads across the entire surface thereof. A translator chip having a plurality of first electrical contacts disposed generally across the interior portion thereof are in electrical contact with the semiconductor device chip electrical pads, and a plurality of second electrical contacts disposed generally around the perimeter of the translator chip are electrically connected with the electrical terminals in the substrate to which the chip is attached. Heat may be removed from the semiconductor device chip through its backside via cooling channels in the substrate.

Abstract translation: 公开了用于安装半导体器件芯片并与其连接的装置。 半导体器件芯片的背面连接到衬底的表面，并且其上表面在其整个表面上包括多个电焊盘。 具有大致横跨其内部布置的多个第一电触点的转换器芯片与半导体器件芯片电焊垫电接触，并且大体上围绕转换器芯片的周边设置的多个第二电触头与 芯片所连接的基板中的电端子。 可以通过其背面通过衬底中的冷却通道从半导体器件芯片去除热量。

公开(公告)号：US4376755A

公开(公告)日：1983-03-15

申请号：US344085

申请日：1982-01-29

Applicant: Jagdish Narayan ,  Yok Chen

Inventor： Jagdish Narayan ,  Yok Chen

IPC: C04B41/00 ,  C30B33/00 ,  F24J2/48 ,  C01F1/00 ,  C01F5/00 ,  C01F7/00 ,  C01G53/00

CPC classification number: C04B41/009 ,  C04B41/0018 ,  C30B29/16 ,  C30B33/00 ,  F24J2/48 ,  Y02E10/40 ,  Y10S126/908

Abstract: This invention is a new process for producing refractory crystalline oxides having improved or unusual properties. The process comprises the steps of forming a doped-metal crystal of the oxide; exposing the doped crystal in a bomb to a reducing atmosphere at superatmospheric pressure and a temperature effecting precipitation of the dopant metal in the crystal lattice of the oxide but insufficient to effect net diffusion of the metal out of the lattice; and then cooling the crystal. Preferably, the cooling step is effected by quenching. The process forms colloidal precipitates of the metal in the oxide lattice. The process may be used, for example, to produce thermally stable black MgO crystalline bodies containing magnetic colloidal precipitates consisting of about 99% Ni. The Ni-containing bodies are solar-selective absorbers, having a room-temperature absorptivity of about 0.96 over virtually all of the solar-energy spectrum and exhibiting an absorption edge in the region of 2 .mu.m. The process parameters can be varied to control the average size of the precipitates. The process can produce a black MgO crystalline body containing colloidal Ni precipitates, some of which have the face-centered-cubic structure and others of which have the body-centered cubic structure. The products of the process are metal-precipitate-containing refractory crystalline oxides which have improved or unique optical, mechanical, magnetic, and/or electronic properties.

Abstract translation: 本发明是一种具有改进或不寻常性能的耐火结晶氧化物的新方法。 该方法包括以下步骤：形成氧化物的掺杂金属晶体; 将掺杂的晶体在炸弹中暴露于还原气氛中，并且在高压下进行，并且使掺杂剂金属沉淀在氧化物的晶格中，但不足以影响金属从晶格中的扩散; 然后冷却晶体。 优选地，冷却步骤通过淬火进行。 该过程在金属晶格中形成金属的胶态沉淀。 该方法可以用于例如产生由约99％Ni组成的含有磁性胶体析出物的热稳定的黑色MgO结晶体。 含Ni物质是太阳能选择性吸收剂，在几乎所有的太阳能光谱中具有约0.96的室温吸收率，并且在2μm的区域中具有吸收边。 可以改变工艺参数以控制沉淀物的平均尺寸。 该方法可以产生含有胶体Ni沉淀物的黑色MgO结晶体，其中一些具有面心立方结构，其它具有体心立方结构。 该方法的产物是含有金属沉淀的耐火结晶氧化物，其具有改进的或独特的光学，机械，磁性和/或电子性质。