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    METHOD AND APPRATUS FOR CONTROLLING SIGNAL TRANSMISSION
    33.
    发明申请
    METHOD AND APPRATUS FOR CONTROLLING SIGNAL TRANSMISSION 有权
    控制信号传输的方法和装置

    公开(公告)号：US20100081424A1

    公开(公告)日：2010-04-01

    申请号：US12417675

    申请日：2009-04-03

    Applicant: Jung Hoon SUH ,  Ki-Hong Park ,  Young-Chai Ko ,  Jin Hee Lee

    Inventor： Jung Hoon SUH ,  Ki-Hong Park ,  Young-Chai Ko ,  Jin Hee Lee

    IPC: H04W4/00 ,  H04B15/00

    CPC classification number: H04W92/10 ,  H04B7/022

    Abstract: A method and apparatus for controlling signal transmission is provided. The method includes determining whether a signal to noise ratio (SNR) between a first base station and a signal receiving node is less than a threshold, and controlling the first base station and a second base station to cooperatively transmit a signal to the signal receiving node in response to the SNR being less than the threshold. Further, the second base station is located in an adjacent cell to a cell containing the first base station.

    Abstract translation: 提供了一种用于控制信号传输的方法和装置。 该方法包括确定第一基站和信号接收节点之间的信噪比（SNR）是否小于阈值，并且控制第一基站和第二基站以协调地将信号发送到信号接收节点 响应SNR小于阈值。 此外，第二基站位于与包含第一基站的小区相邻的小区中。

    Method of fabricating compound semiconductor devices using lift-off of insulating film
    34.
    发明授权
    Method of fabricating compound semiconductor devices using lift-off of insulating film 有权
    使用绝缘膜剥离制造复合半导体器件的方法

    公开(公告)号：US06204102B1

    公开(公告)日：2001-03-20

    申请号：US09207512

    申请日：1998-12-09

    Applicant: Hyung Sup Yoon ,  Jin Hee Lee ,  Byung Sun Park ,  Chul Soon Park ,  Kwang Eui Pyun

    Inventor： Hyung Sup Yoon ,  Jin Hee Lee ,  Byung Sun Park ,  Chul Soon Park ,  Kwang Eui Pyun

    IPC: H01L21338

    CPC classification number: B82Y10/00 ,  H01L21/28587 ,  H01L29/66469 ,  H01L29/66878

    Abstract: A method of forming a gate electrode of a compound semiconductor device includes forming a first insulating film pattern having a first aperture, forming a second insulating film pattern having a second aperture consisting of inverse V-type on the first insulating film pattern, forming a T-type gate electrode by depositing a conductivity film on the entire structure, removing a second insulating film pattern, forming a insulating spacer on a pole sidewall by etching a first insulating film pattern, and forming an ohmic electrode of the source and drain by self-aligning method using T-type gate electrode as a mask. Thereby T-type gate electrode of materials such as refractory metals can be prevented to be deteriorate because of high annealing, as well as it is stably formed, by using an insulating film. Ohmic metal and gate electrodes formed by self-aligning method can be prevented an interconnection by forming an insulating film spacer between these electrodes.

    Abstract translation: 一种形成化合物半导体器件的栅电极的方法包括：形成具有第一孔的第一绝缘膜图案，在第一绝缘膜图案上形成具有由反V型构成的第二孔的第二绝缘膜图案，形成T 通过在整个结构上沉积导电膜，去除第二绝缘膜图案，通过蚀刻第一绝缘膜图案在极侧壁上形成绝缘隔离物，并通过自发形成源极和漏极的欧姆电极， 使用T型栅电极作为掩模的对准方法。 因此，通过使用绝缘膜，可以防止诸如难熔金属的材料的T型栅极电极由于高退火而被稳定地形成。 通过自对准方法形成的欧姆金属和栅电极可以通过在这些电极之间形成绝缘膜间隔来防止互连。

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