公开(公告)号：US06204102B1

公开(公告)日：2001-03-20

申请号：US09207512

申请日：1998-12-09

申请人： Hyung Sup Yoon ,  Jin Hee Lee ,  Byung Sun Park ,  Chul Soon Park ,  Kwang Eui Pyun

发明人： Hyung Sup Yoon ,  Jin Hee Lee ,  Byung Sun Park ,  Chul Soon Park ,  Kwang Eui Pyun

IPC分类号： H01L21338

CPC分类号： B82Y10/00 ,  H01L21/28587 ,  H01L29/66469 ,  H01L29/66878

摘要： A method of forming a gate electrode of a compound semiconductor device includes forming a first insulating film pattern having a first aperture, forming a second insulating film pattern having a second aperture consisting of inverse V-type on the first insulating film pattern, forming a T-type gate electrode by depositing a conductivity film on the entire structure, removing a second insulating film pattern, forming a insulating spacer on a pole sidewall by etching a first insulating film pattern, and forming an ohmic electrode of the source and drain by self-aligning method using T-type gate electrode as a mask. Thereby T-type gate electrode of materials such as refractory metals can be prevented to be deteriorate because of high annealing, as well as it is stably formed, by using an insulating film. Ohmic metal and gate electrodes formed by self-aligning method can be prevented an interconnection by forming an insulating film spacer between these electrodes.

摘要翻译： 一种形成化合物半导体器件的栅电极的方法包括：形成具有第一孔的第一绝缘膜图案，在第一绝缘膜图案上形成具有由反V型构成的第二孔的第二绝缘膜图案，形成T 通过在整个结构上沉积导电膜，去除第二绝缘膜图案，通过蚀刻第一绝缘膜图案在极侧壁上形成绝缘隔离物，并通过自发形成源极和漏极的欧姆电极， 使用T型栅电极作为掩模的对准方法。 因此，通过使用绝缘膜，可以防止诸如难熔金属的材料的T型栅极电极由于高退火而被稳定地形成。 通过自对准方法形成的欧姆金属和栅电极可以通过在这些电极之间形成绝缘膜间隔来防止互连。

公开(公告)号：US08586462B2

公开(公告)日：2013-11-19

申请号：US13307069

申请日：2011-11-30

申请人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L29/808 ,  H01L21/283

CPC分类号： H01L29/7831 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/7787 ,  H01L29/812

摘要： Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

摘要翻译： 公开了一种制造场效晶体管的方法。 所公开的方法包括：提供半导体衬底; 在半导体衬底的一侧上形成源极欧姆金属层; 在所述半导体衬底的另一侧上形成漏极欧姆金属层; 在所述源欧姆金属层和所述漏极欧姆金属层之间形成栅电极，在所述半导体衬底的上部; 在包括源欧姆金属层，漏极欧姆金属层和栅电极的半导体衬底的上部上形成绝缘膜; 以及在绝缘膜的上部形成多个场电极，其中各个场电极下方的绝缘膜具有不同的厚度。

公开(公告)号：US20110140175A1

公开(公告)日：2011-06-16

申请号：US12832432

申请日：2010-07-08

申请人： Byoung-Gue MIN ,  Jongmin Lee ,  Seong-ll Kim ,  Hyung Sup Yoon

发明人： Byoung-Gue MIN ,  Jongmin Lee ,  Seong-ll Kim ,  Hyung Sup Yoon

IPC分类号： H01L27/06 ,  H01L21/8222

CPC分类号： H01L29/66318 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66204 ,  H01L29/7371 ,  H01L29/868

摘要： Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a substrate; forming an emitter pattern and an emitter cap pattern in the HBT region and exposing the base layer by patterning the emitter layer and the emitter cap layer; and forming an intrinsic region by doping a portion of the collector layer of the PIN diode region with a first type impurity, the PIN diode region being spaced apart from the HBT region.

摘要翻译： 提供了一种单片微波集成电路器件及其形成方法。 该方法包括：在基底的异质结双极晶体管（HBT）区域和PIN二极管区域上形成子集电极层，集电极层，基极层，发射极层和发射极盖层; 在HBT区域中形成发射极图案和发射极盖图案，并通过图案化发射极层和发射极盖层而使基底层曝光; 并且通过用第一类型杂质掺杂PIN二极管区域的集电极层的一部分来形成本征区域，PIN二极管区域与HBT区域间隔开。

公开(公告)号：US20110133843A1

公开(公告)日：2011-06-09

申请号：US12960153

申请日：2010-12-03

申请人： Seong-Il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Seong-Il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H03F3/68

CPC分类号： H03F3/245 ,  H03F1/0261 ,  H03F1/52 ,  H03F3/19 ,  H03F3/211 ,  H03F2200/18 ,  H03F2200/451

摘要： Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.

摘要翻译： 提供了一种功率放大器装置。 功率放大器装置包括：切断单元，切断从信号输入端子发送的信号的直流（DC）分量; 连接到所述切断单元的电路保护单元，并且稳定从所述切断单元传送的信号; 以及放大单元，连接到所述电路保护单元并放大从所述电路保护单元传递的信号，其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管，所述电路保护单元包括电阻器， 多个晶体管。

公开(公告)号：US08338241B2

公开(公告)日：2012-12-25

申请号：US13283626

申请日：2011-10-28

申请人： Hyung Sup Yoon ,  Byoung-Gue Min ,  Hokyun Ahn ,  Sang-Heung Lee ,  Hae Cheon Kim

发明人： Hyung Sup Yoon ,  Byoung-Gue Min ,  Hokyun Ahn ,  Sang-Heung Lee ,  Hae Cheon Kim

IPC分类号： H01L21/338

CPC分类号： H01L29/7783 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/42316 ,  H01L29/66462

摘要： Provided are a method of manufacturing a normally-off mode high frequency device structure and a method of simultaneously manufacturing a normally-on mode high frequency device structure and a normally-off mode high frequency device structure on a single substrate.

摘要翻译： 提供一种制造常闭型高频器件结构的方法以及在单个衬底上同时制造常开模式高频器件结构和常关型高频器件结构的方法。

公开(公告)号：US20110140825A1

公开(公告)日：2011-06-16

申请号：US12968022

申请日：2010-12-14

申请人： Seong-il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Seong-il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01F27/30

CPC分类号： H01F17/0006 ,  H01F2017/0086 ,  H01L28/10

摘要： Provided is an inductor. The inductor includes a first to a fourth conductive terminals formed in one direction within a semiconductor substrate, a first conductive line formed on one side of the semiconductor substrate and electrically connected to the second and third conductive terminals interiorly positioned among the first to fourth conductive terminals, a second conductive line formed on the one side of the semiconductor substrate and electrically connected to the first and fourth conductive terminals exteriorly positioned among the first to fourth conductive terminals, and a third conductive line formed on the other side of the semiconductor substrate and electrically connected to the first and third conductive terminals among the first to fourth conductive terminals.

摘要翻译： 提供一种电感器。 电感器包括在半导体衬底内的一个方向上形成的第一至第四导电端子，形成在半导体衬底的一侧上的第一导电线，并且电连接到内部位于第一至第四导电端子之间的第二和第三导电端子 形成在所述半导体衬底的一侧上并与外部位于所述第一至第四导电端子之间的所述第一和第四导电端子电连接的第二导电线，以及形成在所述半导体衬底的另一侧上并电连接的第三导电线 连接到第一至第四导电端子中的第一和第三导电端子。

公开(公告)号：US20110057237A1

公开(公告)日：2011-03-10

申请号：US12874102

申请日：2010-09-01

申请人： Hokyun AHN ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim

发明人： Hokyun AHN ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Woojin Chang ,  Hae Cheon Kim

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/8128 ,  H01L29/42316 ,  H01L29/66863

摘要： Provided is a semiconductor device. The semiconductor device includes: a substrate; an active layer on the substrate; a capping layer on the active layer; source/drain electrodes on the capping layer; a gate electrode on the active layer; and a first void region on a first sidewall of the gate electrode and a second void region on a second sidewall facing the first sidewall.

摘要翻译： 提供一种半导体器件。 半导体器件包括：衬底; 衬底上的有源层; 活性层上的覆盖层; 覆盖层上的源/漏电极; 有源层上的栅电极; 以及栅电极的第一侧壁上的第一空隙区域和面向第一侧壁的第二侧壁上的第二空隙区域。

公开(公告)号：US20070128752A1

公开(公告)日：2007-06-07

申请号：US11607417

申请日：2006-12-01

申请人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

发明人： Jae Yoeb Shim ,  Hyung Sup Yoon ,  Dong Min Kang ,  Ju Yeon Hong ,  Kyung Ho Lee

IPC分类号： H01L21/00

CPC分类号： H01L21/0331 ,  H01L21/28587

摘要： A method of fabricating a T-gate is provided. The method includes the steps of: forming a photoresist layer on a substrate; patterning the photoresist layer formed on the substrate and forming a first opening; forming a first insulating layer on the photoresist layer and the substrate; removing the first insulating layer and forming a second opening to expose the substrate; forming a second insulating layer on the first insulating layer; removing the second insulating layer and forming a third opening to expose the substrate; forming a metal layer on the second insulating layer on which the photoresist layer and the third opening are formed; and removing the metal layer formed on the photoresist layer. Accordingly, a uniform and elaborate opening defining the length of a gate may be formed by deposition of the insulating layer and a blanket dry etching process, and thus a more elaborate micro T-gate electrode may be fabricated.

摘要翻译： 提供一种制造T型栅极的方法。 该方法包括以下步骤：在衬底上形成光致抗蚀剂层; 图案化形成在基板上的光致抗蚀剂层并形成第一开口; 在所述光致抗蚀剂层和所述基板上形成第一绝缘层; 去除所述第一绝缘层并形成第二开口以暴露所述衬底; 在所述第一绝缘层上形成第二绝缘层; 去除所述第二绝缘层并形成第三开口以暴露所述衬底; 在其上形成有光致抗蚀剂层和第三开口的第二绝缘层上形成金属层; 并除去形成在光致抗蚀剂层上的金属层。 因此，可以通过沉积绝缘层和橡皮干蚀刻工艺来形成限定栅极长度的均匀且精细的开口，因此可以制造更精细的微型T型栅电极。

公开(公告)号：US20120153361A1

公开(公告)日：2012-06-21

申请号：US13307069

申请日：2011-11-30

申请人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Hokyun Ahn ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Byoung-Gue Min ,  Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L21/283 ,  H01L29/808

CPC分类号： H01L29/7831 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/7787 ,  H01L29/812

摘要： Disclosed are a field-effect transistor and a manufacturing method thereof. The disclosed field-effect transistor includes: a semiconductor substrate; a source ohmic metal layer formed on one side of the semiconductor substrate; a drain ohmic metal layer formed on another side of the semiconductor substrate; a gate electrode formed between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; an insulating film formed on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and a plurality of field electrodes formed on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.

摘要翻译： 公开了场效应晶体管及其制造方法。 所公开的场效应晶体管包括：半导体衬底; 源极欧姆金属层，形成在半导体衬底的一侧上; 形成在所述半导体衬底的另一侧上的漏极欧姆金属层; 在所述源极欧姆金属层和所述漏极欧姆金属层之间形成的栅电极，位于所述半导体衬底的上部; 形成在包括源极欧姆金属层，漏极欧姆金属层和栅电极的半导体衬底的上部上的绝缘膜; 以及形成在绝缘膜的上部的多个场电极，其中，各个场电极下方的绝缘膜具有不同的厚度。

公开(公告)号：US08130041B2

公开(公告)日：2012-03-06

申请号：US12960153

申请日：2010-12-03

申请人： Seong-Il Kim ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

发明人： Seong-Il Kim ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H03F3/68

CPC分类号： H03F3/245 ,  H03F1/0261 ,  H03F1/52 ,  H03F3/19 ,  H03F3/211 ,  H03F2200/18 ,  H03F2200/451

摘要： Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.

摘要翻译： 提供了一种功率放大器装置。 功率放大器装置包括：切断单元，切断从信号输入端子发送的信号的直流（DC）分量; 连接到所述切断单元的电路保护单元，并且稳定从所述切断单元传送的信号; 以及放大单元，连接到所述电路保护单元并放大从所述电路保护单元传送的信号，其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管，所述电路保护单元包括电阻器， 多个晶体管。