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106 条记录 (耗时 0.033 秒)

    Cleaning metal surfaces with alkyldione peroxides
    31.
    发明授权
    Cleaning metal surfaces with alkyldione peroxides 失效
    用烷基二酮过氧化物清洗金属表面

    公开(公告)号：US06132521A

    公开(公告)日：2000-10-17

    申请号：US467132

    申请日：1999-12-20

    申请人： Subhash Gupta ,  Simon Chooi ,  Mei Sheng Zhou ,  Paul Ho

    发明人： Subhash Gupta ,  Simon Chooi ,  Mei Sheng Zhou ,  Paul Ho

    IPC分类号： C11D3/20 ,  C11D3/39 ,  C23G5/032 ,  B08B3/04

    CPC分类号： C11D3/2072 ,  C11D3/2003 ,  C11D3/2093 ,  C11D3/3945 ,  C23G5/032 ,  Y10S134/902

    摘要： A method of cleaning elemental copper, cobalt, or nickel from the surface of equipment hardware without corroding or damaging the equipment parts and surfaces in the event of wafer breakage and non-wafer breakage is described. A solution includes an alkyldione peroxide, a stabilizing agent, and alcohols is used to oxidize the metal and form soluble complexes which are removed by the cleaning solution. Also, a alkyldione peroxide solution for cleaning elemental copper, cobalt, or nickel from the surface of equipment hardware in the event of wafer breakage and non-wafer breakage is provided.

    摘要翻译： 描述了从设备硬件表面清除元素铜，钴或镍的方法，而不会在晶片断裂和非晶片断裂的情况下腐蚀或损坏设备部件和表面。 溶液包括烷基二酮过氧化物，稳定剂，醇用于氧化金属并形成由清洗溶液除去的可溶性络合物。 此外，提供了在晶片断裂和非晶片断裂的情况下从设备硬件的表面清除元素铜，钴或镍的烷基二氧化碳过氧化物溶液。

    Method to deposit a copper layer
    32.
    发明授权
    Method to deposit a copper layer 失效
    沉积铜层的方法

    公开(公告)号：US06261954B1

    公开(公告)日：2001-07-17

    申请号：US09501968

    申请日：2000-02-10

    申请人： Paul Kwok Keung Ho ,  Subhash Gupta ,  Mei Sheng Zhou ,  Simon Chooi

    发明人： Paul Kwok Keung Ho ,  Subhash Gupta ,  Mei Sheng Zhou ,  Simon Chooi

    IPC分类号： H01L2144

    CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C25D7/123 ,  H01L21/288 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

    摘要： A new method of depositing a copper layer, using disproportionation of Cu(I) ions from a solution stabilized by a polar organic solvent, for single and dual damascene interconnects in the manufacture of an integrated circuit device has been achieved. A dielectric layer, which may comprise a stack of dielectric material, is provided overlying a semiconductor substrate. The dielectric layer is patterned to form vias and trenches for planned dual damascene interconnects. A barrier layer is deposited overlying the dielectric layer to line the vias and trenches. A simple Cu(I) ion solution, stabilized by a polar organic solvent, is coated overlying said barrier layer. Water is added to the stabilized simple Cu(I) ion solution to cause disproportionation of the simple Cu(I) ion from the Cu(I) ion solution. A copper layer is deposited overlying the barrier layer. The copper layer may comprise a thin seed layer for use in subsequent electroplating or electroless plating of copper or may comprise a thick copper layer to fill the vias and trenches. The integrated circuit is completed.

    摘要翻译： 已经实现了在制造集成电路器件中使用Cu（I）离子从由极性有机溶剂稳定的溶液中进行歧化的单层和双镶嵌互连的沉积铜层的新方法。 提供覆盖在半导体衬底上的介电层，其可以包括电介质材料的叠层。 图案化电介质层以形成用于计划的双镶嵌互连的通孔和沟槽。 沉积覆盖在介电层上的阻挡层以对通孔和沟槽进行排列。 将由极性有机溶剂稳定的简单的Cu（I）离子溶液涂覆在所述阻挡层上。 向稳定化的简单的Cu（I）离子溶液中加入水以引起Cu（I）离子溶液中简单的Cu（I）离子的歧化。 沉积在屏障层上的铜层。 铜层可以包括用于铜的后续电镀或无电镀的薄种子层，或者可以包括用于填充通孔和沟槽的厚铜层。 集成电路完成。

    Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene
    35.
    发明授权
    Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene 有权
    复合硅 - 金属氮化物屏障，以防铜铜镶嵌中金属氟化物的形成

    公开(公告)号：US06465888B2

    公开(公告)日：2002-10-15

    申请号：US10043604

    申请日：2002-01-14

    申请人： Simon Chooi ,  Subhash Gupta ,  Mei Sheng Zhou ,  Sang Ki Hong

    发明人： Simon Chooi ,  Subhash Gupta ,  Mei Sheng Zhou ,  Sang Ki Hong

    IPC分类号： H01L2352

    CPC分类号： H01L21/76844 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76855

    摘要： A method of forming amorphous silicon spacers followed by the forming of metal nitride over the spacers in a copper damascene structure—single, dual, or multi-structure—is disclosed in order to prevent the formation of fluorides in copper. In a first embodiment, the interconnection between the copper damascene and an underlying copper metal layer is made by forming an opening from the dual damascene structure to the underlying copper layer after the formation of the metal nitride layer over the amorphous silicon spacers formed on the inside walls of the dual damascene structure. In the second embodiment, the interconnection between the dual damascene structure and the underlying copper line is made from the dual damascene structure by etching into the underlying copper layer after the forming of the amorphous silicon spacers and before the forming of the metal nitride layer. In the third embodiment, the ternary metal silicon nitride spacer is formed by etching after having first formed the amorphous silicon layer and the nitride layer, in that order, and then etching the passivation/barrier layer at the bottom of the damascene structure into the underlying copper layer. In all three embodiments, metal nitride reacts with amorphous silicon to form a ternary metal silicon nitride having an excellent property of adhering to copper while at the same time for forming an excellent barrier to diffusion of copper.

    摘要翻译： 公开了一种形成非晶硅间隔物的方法，随后在铜镶嵌结构 - 单，双或多结构中在间隔物上形成金属氮化物，以防止铜中氟化物的形成。 在第一实施例中，通过在形成在内部的非晶硅间隔物上形成金属氮化物层之后，通过从双镶嵌结构形成开口到下面的铜层来形成铜镶嵌层和下面的铜金属层之间的互连 双镶嵌结构的墙壁。 在第二实施例中，通过在形成非晶硅间隔物之后并且在形成金属氮化物层之前通过蚀刻到下面的铜层中，由双镶嵌结构制造双镶嵌结构和下面的铜线之间的互连。 在第三实施例中，三元金属氮化硅间隔物依次先形成非晶硅层和氮化物层后，通过蚀刻形成，然后在镶嵌结构底部蚀刻钝化/阻挡层，形成底层 铜层。 在所有三个实施例中，金属氮化物与非晶硅反应形成具有优异的粘附铜特性的三元金属氮化硅，同时形成对铜的扩散的优异屏障。

    Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene
    36.
    发明授权
    Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene 有权
    复合硅 - 金属氮化物屏障，以防铜铜镶嵌中金属氟化物的形成

    公开(公告)号：US06372636B1

    公开(公告)日：2002-04-16

    申请号：US09587467

    申请日：2000-06-05

    申请人： Simon Chooi ,  Subhash Gupta ,  Mei-Sheng Zhou ,  Sangki Hong

    发明人： Simon Chooi ,  Subhash Gupta ,  Mei-Sheng Zhou ,  Sangki Hong

    IPC分类号： H01L214763

    CPC分类号： H01L21/76844 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76855

    摘要： A method of forming amorphous silicon spacers followed by the forming of metal nitride over the spacers in a copper damascene structure -single, dual, or multi-structure- is disclosed in order to prevent the formation of fluorides in copper. In a first embodiment, the interconnection between the copper damascene and an underlying copper metal layer is made by forming an opening from the dual damascene structure to the underlying copper layer after the formation of the metal nitride layer over the amorphous silicon spacers formed on the inside walls of the dual damascene structure. In the second embodiment, the interconnection between the dual damascene structure and the underlying copper line is made from the dual damascene structure by etching into the underlying copper layer after the forming of the amorphous silicon spacers and before the forming of the metal nitride layer. In the third embodiment, the ternary metal silicon nitride spacer is formed by etching after having first formed the amorphous silicon layer and the nitride layer, in that order, and then etching the passivation/barrier layer at the bottom of the damascene structure into the underlying copper layer. In all three embodiments, metal nitride reacts with amorphous silicon to form a ternary metal silicon nitride having an excellent property of adhering to copper while at the same time for forming an excellent barrier to diffusion of copper.

    摘要翻译： 公开了一种形成非晶硅间隔物的方法，随后在铜镶嵌结构 - 单，双或多结构中在间隔物上形成金属氮化物，以防止在铜中形成氟化物。 在第一实施例中，通过在形成在内部的非晶硅间隔物上形成金属氮化物层之后，通过从双镶嵌结构形成开口到下面的铜层来形成铜镶嵌层和下面的铜金属层之间的互连 双镶嵌结构的墙壁。 在第二实施例中，通过在形成非晶硅间隔物之后并且在形成金属氮化物层之前通过蚀刻到下面的铜层中，由双镶嵌结构制造双镶嵌结构和下面的铜线之间的互连。 在第三实施例中，三元金属氮化硅间隔物依次先形成非晶硅层和氮化物层后，通过蚀刻形成，然后在镶嵌结构的底部蚀刻钝化/阻挡层，形成底层 铜层。 在所有三个实施例中，金属氮化物与非晶硅反应形成具有优异的粘附铜特性的三元金属氮化硅，同时形成对铜的扩散的优异屏障。

    Method to deposit a cooper seed layer for dual damascence interconnects
    37.
    发明授权
    Method to deposit a cooper seed layer for dual damascence interconnects 失效
    沉积铜离子种子层用于双重马氏体互连的方法

    公开(公告)号：US06368958B2

    公开(公告)日：2002-04-09

    申请号：US09876598

    申请日：2001-06-08

    申请人： Paul Kwok Keung Ho ,  Subhash Gupta ,  Mei Sheng Zhou ,  Simon Chooi

    发明人： Paul Kwok Keung Ho ,  Subhash Gupta ,  Mei Sheng Zhou ,  Simon Chooi

    IPC分类号： H01L214763

    CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C25D7/123 ,  H01L21/288 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

    摘要： A new method of depositing a copper layer, using disproportionation of Cu(I) ions from a solution stabilized by a polar organic solvent, for single and dual damascene interconnects in the manufacture of an integrated circuit device has been achieved. A dielectric layer, which may comprise a stack of dielectric material, is provided overlying a semiconductor substrate. The dielectric layer is patterned to form vias and trenches for planned dual damascene interconnects. A barrier layer is deposited overlying the dielectric layer to line the vias and trenches. A simple Cu(I) ion solution, stabilized by a polar organic solvent, is coated overlying said barrier layer. Water is added to the stabilized simple Cu(I) ion solution to cause disproportionation of the simple Cu(I) ion from the Cu(I) ion solution. A copper layer is deposited overlying the barrier layer. The copper layer may comprise a thin seed layer for use in subsequent electroplating or electroless plating of copper or may comprise a thick copper layer to fill the vias and trenches. The integrated circuit is completed.

    摘要翻译： 已经实现了在制造集成电路器件中使用Cu（I）离子从由极性有机溶剂稳定的溶液中进行歧化的单层和双镶嵌互连的沉积铜层的新方法。 提供覆盖在半导体衬底上的介电层，其可以包括电介质材料的叠层。 图案化电介质层以形成用于计划的双镶嵌互连的通孔和沟槽。 沉积覆盖在介电层上的阻挡层以对通孔和沟槽进行排列。 将由极性有机溶剂稳定的简单的Cu（I）离子溶液涂覆在所述阻挡层上。 向稳定化的简单的Cu（I）离子溶液中加入水以引起Cu（I）离子溶液中简单的Cu（I）离子的歧化。 沉积在屏障层上的铜层。 铜层可以包括用于铜的后续电镀或无电镀的薄种子层，或者可以包括用于填充通孔和沟槽的厚铜层。 集成电路完成。