公开(公告)号：US06565664B2

公开(公告)日：2003-05-20

申请号：US10131519

申请日：2002-04-24

申请人： Subhash Gupta ,  Simon Chooi ,  Paul Ho ,  Mei Sheng Zhou

发明人： Subhash Gupta ,  Simon Chooi ,  Paul Ho ,  Mei Sheng Zhou

IPC分类号： C23G114

CPC分类号： H01L21/32134 ,  C23F1/34 ,  H01L21/7684 ,  Y10S134/902

摘要： An inexpensive and safe copper removal method in the fabrication of integrated circuits is described. Copper is stripped or removed by a chemical mixture comprising an ammonium salt, an amine, and water. The rate of copper stripping can be controlled by varying the concentration of the ammonium salt component and the amount of water in the mixture. Also a novel chemical mixture for stripping copper and removing copper contamination is provided. The novel chemical mixture for removing or stripping copper comprises an ammonium salt, an amine, and water. For example, the novel chemical mixture may comprise ammonium fluoride, water, and ethylenediamine in a ratio of 1:1:1.

公开(公告)号：US06309982B1

公开(公告)日：2001-10-30

申请号：US09803188

申请日：2001-03-12

申请人： Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei-Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Ho

发明人： Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei-Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Ho

IPC分类号： H01L2131

CPC分类号： H01L21/02129 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/3115 ,  H01L21/31612 ,  H01L21/31625

摘要： A method for reducing copper diffusion into an inorganic dielectric layer adjacent to a copper structure by doping the inorganic dielectric layer with a reducing agent (e.g. phosphorous, sulfur, or both) during plasma enhanced chemical vapor deposition. The resulting doped inorganic dielectric layer can reduce copper diffusion without a barrier layer reducing fabrication cost and cycle time, as well as reducing RC delay.

摘要翻译： 一种通过在等离子体增强化学气相沉积期间通过用还原剂（例如磷，硫或两者）掺杂无机介电层来减少铜扩散到与铜结构相邻的无机电介质层中的方法。 所得到的掺杂无机介电层可以减少铜扩散而无需阻挡层降低制造成本和循环时间，并减少RC延迟。

公开(公告)号：US06132521A

公开(公告)日：2000-10-17

申请号：US467132

申请日：1999-12-20

申请人： Subhash Gupta ,  Simon Chooi ,  Mei Sheng Zhou ,  Paul Ho

发明人： Subhash Gupta ,  Simon Chooi ,  Mei Sheng Zhou ,  Paul Ho

IPC分类号： C11D3/20 ,  C11D3/39 ,  C23G5/032 ,  B08B3/04

CPC分类号： C11D3/2072 ,  C11D3/2003 ,  C11D3/2093 ,  C11D3/3945 ,  C23G5/032 ,  Y10S134/902

摘要： A method of cleaning elemental copper, cobalt, or nickel from the surface of equipment hardware without corroding or damaging the equipment parts and surfaces in the event of wafer breakage and non-wafer breakage is described. A solution includes an alkyldione peroxide, a stabilizing agent, and alcohols is used to oxidize the metal and form soluble complexes which are removed by the cleaning solution. Also, a alkyldione peroxide solution for cleaning elemental copper, cobalt, or nickel from the surface of equipment hardware in the event of wafer breakage and non-wafer breakage is provided.

摘要翻译： 描述了从设备硬件表面清除元素铜，钴或镍的方法，而不会在晶片断裂和非晶片断裂的情况下腐蚀或损坏设备部件和表面。 溶液包括烷基二酮过氧化物，稳定剂，醇用于氧化金属并形成由清洗溶液除去的可溶性络合物。 此外，提供了在晶片断裂和非晶片断裂的情况下从设备硬件的表面清除元素铜，钴或镍的烷基二氧化碳过氧化物溶液。

公开(公告)号：US07452808B2

公开(公告)日：2008-11-18

申请号：US10988768

申请日：2004-11-15

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

摘要翻译： 提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。 在暴露的金属端接垫上形成导电聚合物塞。 在导电聚合物塞上形成一个符合标准的界面层。 半导体芯片的导电聚合物插塞与相应的金属凸块对准。 导电聚合物塞上的一致界面层与相应的金属凸块配合。 一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。 还公开了形成和图案化羰基镍层的方法。

公开(公告)号：US06967162B2

公开(公告)日：2005-11-22

申请号：US10988769

申请日：2004-11-15

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

公开(公告)号：US06340608B1

公开(公告)日：2002-01-22

申请号：US09612564

申请日：2000-07-07

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Ho ,  Xu Yi

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Ho ,  Xu Yi

IPC分类号： H01L2150

CPC分类号： H01L24/81 ,  H01L2224/13147 ,  H01L2224/81801 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal track thereover are provided. A metal bump is formed over the exposed metal terminating pad. A photosensitive resin plug is formed over the metal bump. The metal bump of the semiconductor chip is aligned with the corresponding metal track on the separate substrate. The photosensitive resin plug over the metal bump is mated with the corresponding the metal track. The photosensitive resin plug is exposed to UV light to cure the photosensitive resin plug, permanently attaching the metal bump of the semiconductor chip to the corresponding metal track of the separate substrate.

摘要翻译： 提供了具有暴露的金属端接垫的半导体芯片，以及具有其上相应的暴露的金属轨道的单独的基板。 在暴露的金属端接垫上方形成金属凸块。 在金属凸块上形成感光树脂插头。 半导体芯片的金属凸块与分离的基板上的对应金属轨迹对准。 金属凸块上的感光树脂插头与相应的金属轨道配合。 感光树脂插头暴露于紫外线光以固化光敏树脂插头，将半导体芯片的金属凸块永久地连接到单独基板的相应金属轨道上。

公开(公告)号：US07060613B2

公开(公告)日：2006-06-13

申请号：US10988692

申请日：2004-11-15

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

公开(公告)号：US06365508B1

公开(公告)日：2002-04-02

申请号：US09618264

申请日：2000-07-18

申请人： Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi ,  Simon Chooi ,  Yakub Aliyu

发明人： Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi ,  Simon Chooi ,  Yakub Aliyu

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/76807 ,  H01L21/76826

摘要： A new method to avoid post-etch cleaning in a metallization process is described. An insulating layer is formed over a first metal line in a dielectric layer overlying a semiconductor substrate. A via opening is etched through the insulating layer to the first metal line whereby a polymer forms on sidewalls of the via opening. The polymer is treated with a fluorinating agent whereby the polymer is converted to an inert layer. Thereafter, a second metal line is formed within the via opening wherein the inert layer acts is as a barrier layer to complete the metallization process in the fabrication of an integrated circuit device.

摘要翻译： 描述了在金属化过程中避免蚀刻后清洁的新方法。 在覆盖半导体衬底的电介质层中的第一金属线上形成绝缘层。 通孔开口通过绝缘层蚀刻到第一金属线，由此在通孔开口的侧壁上形成聚合物。 用氟化剂处理聚合物，由此将聚合物转化为惰性层。 此后，在通孔开口内形成第二金属线，其中惰性层作为阻挡层，以在集成电路器件的制造中完成金属化工艺。

公开(公告)号：US06394114B1

公开(公告)日：2002-05-28

申请号：US09442312

申请日：1999-11-22

申请人： Subhash Gupta ,  Simon Chooi ,  Paul Ho ,  Mei Sheng Zhou

发明人： Subhash Gupta ,  Simon Chooi ,  Paul Ho ,  Mei Sheng Zhou

IPC分类号： C23G114

CPC分类号： H01L21/32134 ,  C23F1/34 ,  H01L21/7684 ,  Y10S134/902

摘要： An inexpensive and safe copper removal method in the fabrication of integrated circuits is described. Copper is stripped or removed by a chemical mixture comprising an ammonium salt, an amine, and water. The rate of copper stripping can be controlled by varying the concentration of the ammonium salt component and the amount of water in the mixture. Also a novel chemical mixture for stripping copper and removing copper contamination is provided. The novel chemical mixture for removing or stripping copper comprises an ammonium salt, an amine, and water. For example, the novel chemical mixture may comprise ammonium fluoride, water, and ethylenediamine in a ratio of 1:1:1.

摘要翻译： 描述了在制造集成电路中的便宜且安全的铜去除方法。 通过包含铵盐，胺和水的化学混合物将铜剥离或除去。 可以通过改变铵盐组分的浓度和混合物中的水量来控制铜汽提速率。 还提供了一种用于剥离铜并除去铜污染物的新型化学混合物。 用于除去或剥离铜的新型化学混合物包括铵盐，胺和水。 例如，新型化学混合物可以包含比例为1:1:1的氟化铵，水和乙二胺。

公开(公告)号：US06391783B1

公开(公告)日：2002-05-21

申请号：US09615811

申请日：2000-07-13

申请人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

发明人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

IPC分类号： H01L2131

CPC分类号： H01L21/76844 ,  H01L21/288 ,  H01L21/76867

摘要： A method of forming a metal plug, comprising the following steps. An etched dielectric layer, over a conductive layer, over a semiconductor structure are provided. The etched dielectric layer having a via hole and an exposed periphery. The etched dielectric layer is treated with at least one alkaline earth element source to form an in-situ metal barrier layer within the dielectric layer exposed periphery. A metal plug is formed within the via hole wherein the in-situ metal barrier layer prevents diffusion of the metal from the metal plug into the dielectric oxide layer.

摘要翻译： 一种形成金属塞的方法，包括以下步骤。 提供了在半导体结构之上的导电层上的蚀刻介电层。 蚀刻的介电层具有通孔和暴露的周边。 蚀刻的电介质层用至少一个碱土元素源处理，以在电介质层外露的外围形成原位金属阻挡层。 在通孔内形成金属塞，其中原位金属阻挡层防止金属从金属塞扩散到电介质氧化物层中。