公开(公告)号：US08248906B2

公开(公告)日：2012-08-21

申请号：US11964328

申请日：2007-12-26

申请人： Seung-bum Hong ,  Sung-hoon Choa ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Yong Kwan Kim

发明人： Seung-bum Hong ,  Sung-hoon Choa ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Yong Kwan Kim

IPC分类号： G11B9/00

CPC分类号： G11B9/02

摘要： A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.

摘要翻译： 提供了一种铁电硬盘装置，包括：铁电介质，具有设置在底部电极上的底部电极和铁电体层; 以及形成在铁电介质上方的头部，头部用于在铁电层上写入和再现信息。

公开(公告)号：US07828981B2

公开(公告)日：2010-11-09

申请号：US11835874

申请日：2007-08-08

申请人： Ju-hwan Jung ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

IPC分类号： C23F1/00

CPC分类号： G01Q60/30 ,  G01Q60/38

摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

摘要翻译： 提供了具有高分辨率尖端的半导体探针及其制造方法。 半导体探针包括：掺杂有第一杂质的悬臂; 从所述悬臂的端部突出并轻微掺杂与所述第一杂质极性相反的第二杂质的电阻凸部; 以及第一和第二电极区域，形成在电阻凸部的任一侧上并且重掺杂有第二杂质。

公开(公告)号：US20060076487A1

公开(公告)日：2006-04-13

申请号：US11199116

申请日：2005-08-09

申请人： Ju-hwan Jung ,  Sung-dong Kim ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Sung-dong Kim ,  Seung-bum Hong

IPC分类号： G01N23/00

CPC分类号： G01Q60/48

摘要： Provided are a semiconductor probe, a method of manufacturing the same, and an apparatus and method for analyzing a semiconductor surface using the semiconductor probe. The semiconductor probe includes a semiconductor tip containing a low concentration of impurities and a cantilever having a conductive area formed in close proximity to the semiconductor tip attached at one end thereof and doped with a high concentration of impurities. The analysis apparatus and method uses high resolution, non-destructive measurement by forming a PN junction between the sample and the semiconductor probe, thereby enabling quantitative extraction of impurity concentration of the sample.

摘要翻译： 提供半导体探针及其制造方法，以及使用半导体探针分析半导体表面的装置和方法。 半导体探针包括含有低浓度杂质的半导体尖端和具有导电区域的悬臂，该导电区域形成在与其一端附接并掺杂高浓度杂质的半导体尖端附近。 分析装置和方法通过在样品和半导体探针之间形成PN结来进行高分辨率，非破坏性的测量，从而能够定量提取样品的杂质浓度。

公开(公告)号：US07671616B2

公开(公告)日：2010-03-02

申请号：US11772441

申请日：2007-07-02

申请人： Ju-hwan Jung ,  Jae-hong Lee ,  Hyung-cheol Shin ,  Jun-soo Kim ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Jae-hong Lee ,  Hyung-cheol Shin ,  Jun-soo Kim ,  Seung-bum Hong

IPC分类号： G01R31/02 ,  G01N23/00

CPC分类号： G01Q60/30

摘要： A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions.

摘要翻译： 提供具有压花电阻端头的半导体探针和制造半导体探针的方法。 半导体探针包括突起部，该突起部在与悬臂的长度方向交叉的第一方向上在悬臂上突出规定的高度，形成在突出部上的压电电阻端子以及形成在突起部的相反侧的第一和第二半导体电极区域 在突出部分处的压电电阻尖端，其中所述悬臂掺杂有第一掺杂剂，所述第一和第二半导体电极区域和所述压电电阻尖端掺杂有与所述第一掺杂剂具有不同极性的第二掺杂剂，并且所述压花电阻尖端 掺杂浓度低于第一和第二半导体电极区域。

公开(公告)号：US20090034120A1

公开(公告)日：2009-02-05

申请号：US12038878

申请日：2008-02-28

申请人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

发明人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

IPC分类号： G11B5/187 ,  G11B9/02

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

摘要翻译： 提供电场读/写头，制造电场读/写头的方法，以及包括电场读/写头的信息存储装置。 电场读/写头包括：具有面向记录介质的第一表面和垂直于第一表面的第二表面的基板; 以及形成在所述第二表面上并且具有面向所述记录介质的至少一部分的突起，其中包括源极，漏极和沟道的电阻传感器包括在所述突起中。 绝缘层和电场屏蔽层分别进一步依次形成在突起的相对侧上，并且电场屏蔽层中的至少一个是写入电极。

公开(公告)号：US20080247085A1

公开(公告)日：2008-10-09

申请号：US11964328

申请日：2007-12-26

申请人： Seung-bum Hong ,  Sung-hoon Choa ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Yong Kwan Kim

发明人： Seung-bum Hong ,  Sung-hoon Choa ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Yong Kwan Kim

IPC分类号： G11B5/127

CPC分类号： G11B9/02

摘要： A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.

摘要翻译： 提供了一种铁电硬盘装置，包括：铁电介质，具有设置在底部电极上的底部电极和铁电体层; 以及形成在铁电介质上方的头部，头部用于在铁电层上写入和再现信息。

公开(公告)号：US07411210B2

公开(公告)日：2008-08-12

申请号：US11322340

申请日：2006-01-03

申请人： Ju-hwan Jung ,  Hyung-cheol Shin ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Hyung-cheol Shin ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L23/58

CPC分类号： G01Q70/16 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/1409

摘要： A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.

摘要翻译： 具有电阻尖端的半导体探针和制造半导体探针的方法。 掺杂有第一杂质的电阻尖端包括在其峰上形成的电阻区，并且轻掺杂具有与第一杂质极性相反的第二杂质，以及形成在其倾斜侧上并且重掺杂有第二杂质的第一和第二半导体区 。 半导体探针包括电阻尖端，悬臂具有设置有电阻尖端的端部，设置在悬臂上并覆盖电阻区域的电介质层，以及设置在电介质层上的金属屏蔽层， 位置对应于电阻区域。

公开(公告)号：US20070119240A1

公开(公告)日：2007-05-31

申请号：US11526689

申请日：2006-09-26

申请人： Hong-ski Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Hong-ski Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： G01N27/60 ,  G01N13/10 ,  G12B21/12 ,  G11C7/00

CPC分类号： G11B9/02 ,  G01Q10/06 ,  G01Q70/08 ,  G01Q80/00

摘要： A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.

摘要翻译： 半导体探针和使用其的信息的写入和读取方法。 半导体探针包括形成在悬臂的端部上的悬臂和尖端，以在其上形成有电极的表面上写入或读取铁电介质上的信息。 尖端包括轻掺杂半导体杂质的电阻区域和重掺杂半导体杂质的导电区域。 悬臂包括形成在面向介质的底面上的静电力产生电极。 通过在形成在铁电介质上的电极和静电力产生电极之间选择性地施加电压来调节尖端和介质之间的接触力。

公开(公告)号：US20070099309A1

公开(公告)日：2007-05-03

申请号：US11640229

申请日：2006-12-18

申请人： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

发明人： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

IPC分类号： H01L21/00

CPC分类号： B82Y10/00 ,  G11B9/08 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1472 ,  G11B9/149 ,  G11B11/08 ,  G11B13/06

摘要： A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer. The data storage apparatus includes a stage supporting a data storage medium, which includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer, a scanner driving the stage, a probe placed over the data storage medium and including a tip forming an electric field with the data storage medium and a cantilever supporting the tip placed at its one end so as to maintain a predetermined distance between the data storage medium and the tip, a circuit unit applying a driving signal, a data write signal, and a data erase signal to the scanner and the probe and detecting a data read signal, and a light source irradiating light on the data storage medium.

公开(公告)号：US20070051169A1

公开(公告)日：2007-03-08

申请号：US11482690

申请日：2006-07-10

申请人： Ju-hwan Jung ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

IPC分类号： G01B5/28

CPC分类号： G01Q60/30 ,  G01Q60/38

摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.