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    Semiconductor probe and method of writing and reading information using the same
    1.
    发明申请
    Semiconductor probe and method of writing and reading information using the same 失效
    半导体探头及其使用方法写入和读取信息

    公开(公告)号：US20070119240A1

    公开(公告)日：2007-05-31

    申请号：US11526689

    申请日：2006-09-26

    申请人： Hong-ski Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

    发明人： Hong-ski Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

    IPC分类号： G01N27/60 ,  G01N13/10 ,  G12B21/12 ,  G11C7/00

    CPC分类号： G11B9/02 ,  G01Q10/06 ,  G01Q70/08 ,  G01Q80/00

    摘要： A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.

    摘要翻译： 半导体探针和使用其的信息的写入和读取方法。 半导体探针包括形成在悬臂的端部上的悬臂和尖端，以在其上形成有电极的表面上写入或读取铁电介质上的信息。 尖端包括轻掺杂半导体杂质的电阻区域和重掺杂半导体杂质的导电区域。 悬臂包括形成在面向介质的底面上的静电力产生电极。 通过在形成在铁电介质上的电极和静电力产生电极之间选择性地施加电压来调节尖端和介质之间的接触力。

    Ferroelectric recording medium and writing method for the same
    3.
    发明授权
    Ferroelectric recording medium and writing method for the same 失效
    铁电记录介质和写入方法相同

    公开(公告)号：US07820311B2

    公开(公告)日：2010-10-26

    申请号：US11348485

    申请日：2006-02-07

    申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G11B5/64

    CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

    摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

    摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

    Semiconductor probe with resistive tip and method of fabricating the same
    5.
    发明授权
    Semiconductor probe with resistive tip and method of fabricating the same 失效
    具有电阻尖端的半导体探针及其制造方法

    公开(公告)号：US07319224B2

    公开(公告)日：2008-01-15

    申请号：US11219732

    申请日：2005-09-07

    申请人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G21K7/00

    CPC分类号： G11B9/1409 ,  G01Q60/30 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/879

    摘要： Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.

    摘要翻译： 提供具有电阻尖端的半导体探针和制造半导体探针的方法。 该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂，并且蚀刻所述掩模层，使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂以覆盖所述第一光致抗蚀剂的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

    Ferroelectric recording medium and writing method for the same
    6.
    发明授权
    Ferroelectric recording medium and writing method for the same 失效
    铁电记录介质和写入方法相同

    公开(公告)号：US07889628B2

    公开(公告)日：2011-02-15

    申请号：US12128788

    申请日：2008-05-29

    申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G11B7/00

    CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

    摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

    摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

    Electric field read/write head and method of manufacturing same and data read/write device
    8.
    发明申请
    Electric field read/write head and method of manufacturing same and data read/write device 失效
    电场读/写头及其制造方法及数据读写装置

    公开(公告)号：US20080030909A1

    公开(公告)日：2008-02-07

    申请号：US11723567

    申请日：2007-03-21

    申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

    发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

    IPC分类号： G11B5/33 ,  G11B5/127 ,  G11B5/82

    CPC分类号： G11B9/02 ,  Y10T29/49032

    摘要： An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

    摘要翻译： 提供电场读/写头，其制造方法以及包括电场读/写头的数据读/写装置。 数据读/写装置包括从记录介质读取和写入数据的电场读/写头。 电场读/写头包括半导体衬底，电阻区，源极和漏极区以及写入电极。 半导体衬底包括具有相邻边缘的第一表面和第二表面。 电阻区域形成为从第一表面的一端的中心部分延伸到第二表面。 源极区域和漏极区域形成在电阻区域的两侧并且与第一表面分离。 写电极形成在电阻区上，绝缘层位于写电极和电阻区之间。

    Electric field read/write head
    9.
    发明授权
    Electric field read/write head 失效
    电场读写头

    公开(公告)号：US08304808B2

    公开(公告)日：2012-11-06

    申请号：US12120816

    申请日：2008-05-15

    申请人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

    发明人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

    IPC分类号： H01L29/66

    CPC分类号： G11B9/02 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7787

    摘要： Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.

    摘要翻译： 提供了一种电场头，其包括用于读取记录在记录介质上的信息的电阻传感器。 电阻传感器包括包括源极和漏极的第一半导体层以及与第一半导体层非均匀组合的第二半导体层。 此外，电场头还包括在第一和第二半导体层的结区中的源极和漏极之间的沟道。

    Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head
    10.
    发明授权
    Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head 失效
    电场读/写头，其制造方法以及包括电场读/写头的信息存储装置

    公开(公告)号：US08107354B2

    公开(公告)日：2012-01-31

    申请号：US12038878

    申请日：2008-02-28

    申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

    发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park ,  Dae-young Jeon

    IPC分类号： G11B5/187 ,  G11B9/02

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

    摘要翻译： 提供电场读/写头，制造电场读/写头的方法，以及包括电场读/写头的信息存储装置。 电场读/写头包括：具有面向记录介质的第一表面和垂直于第一表面的第二表面的基板; 以及形成在所述第二表面上并且具有面向所述记录介质的至少一部分的突起，其中包括源极，漏极和沟道的电阻传感器包括在所述突起中。 绝缘层和电场屏蔽层分别进一步依次形成在突起的相对侧上，并且电场屏蔽层中的至少一个是写入电极。