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47 条记录 (耗时 0.022 秒)

    Method for manufacturing printed circuit board
    33.
    发明申请
    Method for manufacturing printed circuit board 审中-公开
    印刷电路板制造方法

    公开(公告)号：US20080012168A1

    公开(公告)日：2008-01-17

    申请号：US11826007

    申请日：2007-07-11

    申请人： Senug-Hyun Ra ,  Myeong-Ho Hong ,  Hyuk-Soo Lee ,  Choon-Keun Lee ,  Sang-Moon Lee ,  Jae-Choon Cho ,  Jung-Woo Lee ,  Jeong-Bok Kwak

    发明人： Senug-Hyun Ra ,  Myeong-Ho Hong ,  Hyuk-Soo Lee ,  Choon-Keun Lee ,  Sang-Moon Lee ,  Jae-Choon Cho ,  Jung-Woo Lee ,  Jeong-Bok Kwak

    IPC分类号： B29C43/20

    CPC分类号： B29C43/021 ,  B29C33/303 ,  B29C2043/025 ,  H05K3/0014 ,  H05K3/005 ,  H05K3/107 ,  H05K2203/0108 ,  H05K2203/167

    摘要： A method for manufacturing printed circuit board is disclosed. With a method for manufacturing a printed circuit board which includes: (a) stacking an insulation substrate, in which a first align hole is perforated, onto a support plate, to one side of which a guide pin is joined, such that the guide pin is inserted into the first align hole, where the first align hole is formed in correspondence with the guide pin, (b) stacking an imprinting mold, in which a second align hole is perforated, onto the support plate, such that the guide pin is inserted into the second hole formed in correspondence with the guide pin, and (c) stacking and pressing a pressing plate onto the support plate, and compressing the insulation substrate and the imprinting mold together, where an intaglio pattern is formed in a surface of the insulation substrate facing the imprinting mold, in correspondence with a circuit pattern, and a raised pattern is formed in a surface of the imprinting mold facing the insulation substrate, in correspondence with the circuit pattern, the installation of expensive aligning equipment is unnecessary in aligning an imprinting mold and an insulation substrate, and it is possible to form the intaglio patterns by imprinting on several insulation substrates at the same time by collectively stacking the several imprinting molds and the insulation substrates and compressing, and to prevent defects caused by the expansion and contraction of the insulation substrate which occur during the forming of the intaglio patterns.

    摘要翻译： 公开了印刷电路板的制造方法。 一种用于制造印刷电路板的方法，包括：（a）将其中穿过第一对准孔的绝缘基板堆叠在支撑板上，导向销的一侧被连接到导向销 插入到第一对准孔中，其中第一对准孔对应于引导销形成，（b）将其中穿过第二对准孔的压印模具堆叠到支撑板上，使得引导销 插入到与引导销对应形成的第二孔中，（c）将压板堆叠并按压到支撑板上，并将绝缘基板和压印模压在一起，在该表面上形成凹版图案 绝缘基板面对压印模具，与电路图形对应，并且凸起图案形成在压印模具的面对绝缘基板的表面中，与电路图案对应， 在对准压印模具和绝缘基板时不需要安装昂贵的对准设备，并且可以通过将多个压印模具和绝缘基板共同堆叠同时压印在几个绝缘基板上来形成凹版图案， 并且防止在形成凹版图案期间发生的绝缘基板的膨胀和收缩引起的缺陷。

    Methods of fabricating semiconductor device having slope at lower sides of interconnection hole with etch-stop layer
    34.
    发明授权
    Methods of fabricating semiconductor device having slope at lower sides of interconnection hole with etch-stop layer 有权
    制造具有蚀刻停止层的互连孔下侧具有斜面的半导体器件的方法

    公开(公告)号：US07163890B2

    公开(公告)日：2007-01-16

    申请号：US10910922

    申请日：2004-08-04

    申请人： Ki-Ho Kang ,  Hyeok-Sang Oh ,  Jung-Woo Lee ,  Dae-Keun Park

    发明人： Ki-Ho Kang ,  Hyeok-Sang Oh ,  Jung-Woo Lee ,  Dae-Keun Park

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76808 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835

    摘要： Methods of manufacturing semiconductor devices having slopes at lower sides of an interconnection hole include an etch-stop layer and an interlayer dielectric layer sequentially formed on a semiconductor substrate having the lower conductive layer. Portions of the etch-stop layer are exposed by selectively etching the interlayer dielectric layer. A step is formed in the etch-stop layer by removing portions of the exposed etch-stop layer. And, the step is formed at a boundary between a recessed portion of the exposed etch-stop layer and a raised portion of the etch-stop layer covered with the interlayer dielectric layer. Portions of the interlayer dielectric layer are removed to expose portions of the raised portion of the etch-stop layer. And, the exposed recessed and raised portions are anisotropically etched to expose the lower conductive layer and to form the interconnection hole having the slopes, wherein the slopes are made of a residual etch-stop layer at the lower sides of the interconnection hole.

    摘要翻译： 制造在互连孔的下侧具有斜面的半导体器件的方法包括依次形成在具有下导电层的半导体衬底上的蚀刻停止层和层间电介质层。 蚀刻停止层的一部分通过选择性蚀刻层间电介质层而被曝光。 通过去除暴露的蚀刻停止层的部分，在蚀刻停止层中形成台阶。 并且，该步骤形成在暴露的蚀刻停止层的凹陷部分和被层间介电层覆盖的蚀刻停止层的凸起部分之间的边界处。 去除层间绝缘层的一部分以暴露蚀刻停止层的凸起部分的部分。 并且，各向异性蚀刻暴露的凹部和凸起部分以暴露下导电层并形成具有斜面的互连孔，其中斜面由互连孔的下侧的残留蚀刻停止层制成。

    Automatic transfer switch
    35.
    发明授权
    Automatic transfer switch 有权
    自动转接开关

    公开(公告)号：US08604377B2

    公开(公告)日：2013-12-10

    申请号：US13183702

    申请日：2011-07-15

    申请人： Choong-Hyun Lee ,  Jung-Woo Lee

    发明人： Choong-Hyun Lee ,  Jung-Woo Lee

    IPC分类号： H01H33/08

    CPC分类号： H01H1/22 ,  H01H1/5822 ,  H01H2009/365 ,  H01H2300/018 ,  H02J9/06

    摘要： Disclosed is an automatic transfer switch. According to the exemplary embodiment of the present invention, the automatic transfer switch alternatively supplying power from a commercial power terminal and an emergency power terminal to load terminals by moving a pair of movable contactors, wherein at least one of the pair of movable contactors are integrally formed with the commercial power terminal or the emergency power terminal through a wire made of a flexible material.

    摘要翻译： 公开了一种自动转印开关。 根据本发明的示例性实施例，自动转换开关通过移动一对可动接触器而从商用电源端子和应急电源端子交替地供电以加载端子，其中，所述一对可动接触器中的至少一个是一体的 通过由柔性材料制成的电线与商业电源终端或应急电源终端形成。

    AUTOMATIC TRANSFER SWITCH
    36.
    发明申请
    AUTOMATIC TRANSFER SWITCH 有权
    自动转换开关

    公开(公告)号：US20130015044A1

    公开(公告)日：2013-01-17

    申请号：US13183702

    申请日：2011-07-15

    申请人： Choong-Hyun LEE ,  Jung-Woo Lee

    发明人： Choong-Hyun LEE ,  Jung-Woo Lee

    IPC分类号： H01H63/00

    CPC分类号： H01H1/22 ,  H01H1/5822 ,  H01H2009/365 ,  H01H2300/018 ,  H02J9/06

    摘要： Disclosed is an automatic transfer switch. According to the exemplary embodiment of the present invention, the automatic transfer switch alternatively supplying power from a commercial power terminal and an emergency power terminal to load terminals by moving a pair of movable contactors, wherein at least one of the pair of movable contactors are integrally formed with the commercial power terminal or the emergency power terminal through a wire made of a flexible material.

    摘要翻译： 公开了一种自动转印开关。 根据本发明的示例性实施例，自动转换开关通过移动一对可动接触器而从商用电源端子和应急电源端子交替地供电以加载端子，其中，所述一对可动接触器中的至少一个是一体的 通过由柔性材料制成的电线与商业电源终端或应急电源终端形成。

    TiO2-xNx Nanotubes and Method for Preparing the Same
    39.
    发明申请
    TiO2-xNx Nanotubes and Method for Preparing the Same 有权
    TiO2-xNx纳米管及其制备方法

    公开(公告)号：US20100044630A1

    公开(公告)日：2010-02-25

    申请号：US12488071

    申请日：2009-06-19

    申请人： Jeung-Ku Kang ,  Kyu-Sung Han ,  Jung-Woo Lee ,  Yong-Mook Kang

    发明人： Jeung-Ku Kang ,  Kyu-Sung Han ,  Jung-Woo Lee ,  Yong-Mook Kang

    IPC分类号： C09K3/00

    CPC分类号： C01G23/047 ,  B82Y30/00 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/13 ,  C30B29/16 ,  C30B29/602 ,  C30B31/06

    摘要： TiO2-xNx (0.01≦x≦0.2) nanotubes and a method for preparing the same are disclosed. More particularly, TiO2-xNx (0.01≦x≦0.2) nanotubes doped with nitrogen atoms by treating TiO2 nanotubes through nitrogen plasma to partially substitute oxygen portion of TiO2 nanotube with nitrogen, and a method for preparing the same are disclosed. The TiO2-xNx (0.01≦x≦0.2) nanotube of the present invention is prepared by doping nitrogen on a TiO2 nanotube to control an electronic structure and reduce a band gap of the TiO2 nanotube, so that the prepared TiO2-xNx (0.01≦x≦0.2) nanotube exhibits improved conductivity and extended light absorption range from a UV ray area up to a visible light area, thus having more enhanced applicable performance in optical and/or electrochemical aspects.

    摘要翻译： 公开了TiO2-xNx（0.01＆nlE; x＆nEE; 0.2）纳米管及其制备方法。 更具体地，公开了通过用氮等离子体处理TiO 2纳米管以用氮部分取代TiO 2纳米管的氧部分来掺杂氮原子的TiO 2-x N x（0.01和n L e; x和n L e; 0.2）及其制备方法。 通过在TiO 2纳米管上掺杂氮以控制电子结构并降低TiO 2纳米管的带隙来制备本发明的TiO 2-x N x（0.01和n l E x x N e 0.2）纳米管，使得制备的TiO 2-xN x（0.01 ＆nlE; x＆nlE; 0.2）纳米管表现出从紫外线区域到可见光区域的改善的导电性和扩展的光吸收范围，因此在光学和/或电化学方面具有更强的适用性能。