摘要:
Disclosed herein is a semiconductor device including an N-channel insulated gate field effect transistor and a P-channel insulated gate field effect transistor, the device having: a first insulating layer and a second insulating layer; and gate electrode contact plugs. Each of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor is buried in a gate electrode formation opening provided in the first insulating layer.
摘要:
A solid-state imaging device includes a semiconductor substrate having a pixel region including a photoelectric conversion portion, a wiring portion including a conductor line and disposed on the semiconductor substrate with an insulating film therebetween, a metal pad connected to the conductor line, a pad-coating insulating film coating the metal pad, and a waveguide material layer. The wiring portion and the pad-coating insulating film each have an opening therein over the photoelectric conversion portion, and the openings continue from each other to define a waveguide opening having an open side and a closed side. The waveguide material layer is disposed in the waveguide opening and on the pad-coating insulating film with a passivation layer therebetween. The pad-coating insulating film has a thickness of 50 to 250 nm and a face defining the opening. The face is slanted so as to diverge toward the open side of the opening.
摘要:
A motor terminal device comprises a storage case having an engaging section and installed on the motor side and a storage cover having an engaged section which can be engaged with the engaging section. The storage case stores external connecting terminals and electrical components, while the storage cover has a projecting pressers located in a position corresponding to the electrical components to secure the electrical components by pressing. The external connecting terminals have a latch hole and the storage case has a latch projection. Detachment of external connecting terminals is prevented as the latch projection is engaged with the latch hole.