公开(公告)号：US06596558B2

公开(公告)日：2003-07-22

申请号：US10090552

申请日：2002-03-04

申请人： Sung Bock Kim ,  Dae Kon Oh

发明人： Sung Bock Kim ,  Dae Kon Oh

IPC分类号： H01L2100

CPC分类号： H01S5/10 ,  G02B6/1228 ,  G02B6/136

摘要： The present invention relates to a method for fabricating an optical device integrated with a spot size converter to reduce defect and low reflectivity in a butt-joint portion, the method including the steps of: a) depositing a first clad layer, an active layer and a second clad layer sequentially on the (100) plane of a semiconductor substrate; b) forming on the second clad layer a double dielectric mask of which the lower layer has a relatively wider width than that of the upper layer, exposing one side of the second clad layer; c) wet-etching the first clad layer, the active layer and the second clad layer in a buried ridge structure by using the double dielectric mask, and exposing the (111)A plane of the active layer tilted towards the (100) plane by a predetermined angle; d) growing a spot size conversion region on the (111)A plane of the active layer; and e) removing the double dielectric mask.