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公开(公告)号：US20240213736A1
公开(公告)日：2024-06-27
申请号：US18463058
申请日：2023-09-07
Applicant: Blue Laser Fusion, Inc.
Inventor： Shuji NAKAMURA , Hiroaki OHTA
CPC classification number: H01S5/0085 , G21B1/23 , H01S5/0071 , H01S5/10 , H01S5/3235 , H02N2/028
Abstract: In an example, the present invention provides a high intensity pulse laser generation system. The system has a variety of elements. The system has an optical cavity maintained in a vacuum, e.g., 300 Torr and less. In an example, the optical cavity is configured to increase an intensity of a laser beam comprising a pulse from a first energy power intensity to a second higher energy power intensity propagating on a first optical path configured within the optical cavity by circulating or reciprocating at least a portion of the laser beam.
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公开(公告)号：US20230194907A1
公开(公告)日：2023-06-22
申请号：US17999265
申请日：2021-05-17
Applicant: ZTE CORPORATION
Inventor： Jiangbing DU , Haining CHONG , Weihong SHEN , Zuyuan HE , Ningfeng TANG
Abstract: Disclosed are an optical modulator and control method therefor, the optical modulator includes an input waveguide, an adjustable ring-shaped resonant cavity, a feedback loop waveguide, a first mode converter, and an output waveguide. The input waveguide is configured to receive an initial optical signal, the adjustable ring-shaped resonant cavity is configured to perform resonance and modulation processing on the initial optical signal and output a first optical signal, the feedback loop waveguide is configured to receive and transmit the first optical signal, the first mode converter is configured to perform mode conversion processing on the first optical signal and output a second optical signal to the adjustable ring-shaped resonant cavity, the adjustable ring-shaped resonant cavity is further configured to perform resonance and modulation processing on the second optical signal and output a third optical signal, and the output waveguide configured to receive and output the third optical signal.
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公开(公告)号：US09882354B2
公开(公告)日：2018-01-30
申请号：US15124778
申请日：2015-03-03
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yujin Zheng , Hirofumi Kan
CPC classification number: H01S5/4062 , H01S3/0804 , H01S3/08081 , H01S3/0815 , H01S5/02438 , H01S5/026 , H01S5/10 , H01S5/141 , H01S5/4025 , H01S5/405 , H01S5/4068 , H01S5/42
Abstract: A semiconductor laser device includes: a semiconductor laser array in which a plurality of active layers that emit laser lights with a divergence angle θS (>4°) in a slow axis direction are arranged; a first optical element that reflects first partial lights by a first reflecting surface and returns the first partial lights to the active layers; and a second optical element that reflects partial mode lights of second partial lights by a second reflecting surface and returns the partial mode lights to the active layers, the first reflecting surface forms an angle equal to or greater than 2° and less than (θS/2) with a plane perpendicular to an optical axis direction of the active layers, and the second reflecting surface forms an angle greater than (−θS/2) and equal to or less than −2° with the plane perpendicular to the optical axis direction of the active layers.
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公开(公告)号：US09865991B2
公开(公告)日：2018-01-09
申请号：US15255970
申请日：2016-09-02
Applicant: PHOVEL.CO.LTD.
Inventor： Jeong-Soo Kim
IPC: H01S5/0687 , H01S5/10 , H01S5/022
CPC classification number: H01S5/10 , H01S5/0064 , H01S5/0071 , H01S5/0078 , H01S5/02212 , H01S5/02248 , H01S5/02415 , H01S5/02438 , H01S5/0687
Abstract: Disclosed herein is a technology of effectively interrupting light reflected from a wavelength selective filter so as not to be fed back to a laser diode chip in a semiconductor laser package having a function of adjusting a relative intensity ratio of a signal of “1” and a signal of “0” using an optical filter. Since an optical interruption device according to the present invention may effectively interrupt a light feedback to the laser diode chip by adjusting characteristics of a 45 degree partial reflection mirror in an existing TO-can type laser device having the 45 degree partial reflection mirror and additionally disposing one λ/4 waveplate, unlike an optical isolator according to the related art using an existing Faraday rotator, the signals of “1” and “0” may be effectively adjusted in a TO-can type laser device having a small volume, thereby improving a function of communication.
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公开(公告)号：US09837781B2
公开(公告)日：2017-12-05
申请号：US14714078
申请日：2015-05-15
Applicant: Oracle International Corporation
Inventor： Ashok V. Krishnamoorthy , Jin-Hyoung Lee , Xuezhe Zheng
IPC: H01S3/10 , H01S3/08 , H01S3/063 , H01S5/0683 , H01S5/026 , H01S3/13 , H01S5/02 , H01S5/40 , H01S5/065
CPC classification number: H01S3/0637 , H01S3/083 , H01S3/10 , H01S3/10007 , H01S3/10069 , H01S3/1301 , H01S5/005 , H01S5/021 , H01S5/026 , H01S5/0262 , H01S5/0612 , H01S5/06255 , H01S5/065 , H01S5/0653 , H01S5/0654 , H01S5/06804 , H01S5/06837 , H01S5/0687 , H01S5/10 , H01S5/141 , H01S5/142 , H01S5/4068 , H01S5/50
Abstract: An optical source is described. This optical source includes a semiconductor optical amplifier (with a semiconductor other than silicon) that provides an optical gain medium and that includes a reflector. Moreover the hybrid external cavity laser includes a photonic chip with: an optical waveguide that conveys an optical signal output by the semiconductor optical amplifier; and a ring resonator, having a resonance wavelength, which reflects at least a resonance wavelength in the optical signal, where the reflector and the ring resonator define an optical cavity. Furthermore, the photonic chip includes: a thermal-tuning mechanism that adjusts the resonance wavelength; a photo-detector that measures an optical power output by the ring resonator; and control logic that adjusts the temperature of the ring resonator based on the measured optical power to lock a cavity mode of the optical cavity to a carrier wavelength.
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Patent Agency Ranking
公开(公告)号：US20170324218A1
公开(公告)日：2017-11-09
申请号：US14714078
申请日：2015-05-15
Applicant: Oracle International Corporation
Inventor： Ashok V. Krishnamoorthy , Jin-Hyoung Lee , Xuezhe Zheng
CPC classification number: H01S3/0637 , H01S3/083 , H01S3/10 , H01S3/10007 , H01S3/10069 , H01S3/1301 , H01S5/005 , H01S5/021 , H01S5/026 , H01S5/0262 , H01S5/0612 , H01S5/06255 , H01S5/065 , H01S5/0653 , H01S5/0654 , H01S5/06804 , H01S5/06837 , H01S5/0687 , H01S5/10 , H01S5/141 , H01S5/142 , H01S5/4068 , H01S5/50
Abstract: An optical source is described. This optical source includes a semiconductor optical amplifier (with a semiconductor other than silicon) that provides an optical gain medium and that includes a reflector. Moreover the hybrid external cavity laser includes a photonic chip with: an optical waveguide that conveys an optical signal output by the semiconductor optical amplifier; and a ring resonator, having a resonance wavelength, which reflects at least a resonance wavelength in the optical signal, where the reflector and the ring resonator define an optical cavity. Furthermore, the photonic chip includes: a thermal-tuning mechanism that adjusts the resonance wavelength; a photo-detector that measures an optical power output by the ring resonator; and control logic that adjusts the temperature of the ring resonator based on the measured optical power to lock a cavity mode of the optical cavity to a carrier wavelength.
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公开(公告)号：US20170310077A1
公开(公告)日：2017-10-26
申请号：US15133334
申请日：2016-04-20
Applicant: Trumpf Photonics, Inc.
Inventor： Qiang Zhang , Haiyan An , Hans Georg Treusch
CPC classification number: H01S5/0282 , C23C14/021 , C23C14/46 , C23C14/568 , C30B23/02 , C30B23/066 , C30B29/48 , H01J37/32082 , H01J37/32743 , H01J37/32816 , H01J37/32889 , H01J37/32899 , H01J2237/327 , H01J2237/335 , H01S5/0281 , H01S5/0287 , H01S5/10 , H01S5/34313 , H01S5/4025
Abstract: Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.
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公开(公告)号：US20170276848A1
公开(公告)日：2017-09-28
申请号：US15624117
申请日：2017-06-15
Inventor： Michael B. Sinclair , Salvatore Campione , David Bruce Berckel , Igal Brener , Paul J. Resnick
Abstract: Tunable filters can use Fano metasurface designs having extremely narrow transmission bands. The Fano metasurface can comprise dielectric or semiconductor materials and can produce transmission bands with quality factors well in excess of 1000—at least a factor of 50 greater than typical metamaterial-based infrared resonances. Numerical simulations of these metasurfaces show that the spectral position of the passband can be changed by slightly changing the position of a small dielectric perturbation block placed within the near-field of the resonator by using simple electromechanical actuation architectures that allow for such motion. An array of independently tunable narrowband infrared filters can thereby be fabricated that only requires deep-subwavelength motions of perturbing objects in the resonator's near-field.
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公开(公告)号：US09722394B2
公开(公告)日：2017-08-01
申请号：US14361647
申请日：2012-11-19
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Lauer , Harald König , Uwe Strauβ , Alexander Bachmann
CPC classification number: H01S5/02469 , H01S5/0224 , H01S5/024 , H01S5/02461 , H01S5/0425 , H01S5/10 , H01S5/1064 , H01S5/2036 , H01S5/2054
Abstract: A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.
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公开(公告)号：US20170199036A1
公开(公告)日：2017-07-13
申请号：US15402149
申请日：2017-01-09
Applicant: Frederick Ira MOXLEY, III
Inventor： Frederick Ira MOXLEY, III
CPC classification number: G01C19/58 , G01R33/032 , G01R33/0354 , G06N99/002 , H01L39/223 , H01S5/041 , H01S5/10 , H01S5/183
Abstract: The present disclosure relates to Superfluid QUantum Interference Devices (SQUIDs) that measure phase differences existing in quasi-particles or matter-wave systems, and the related techniques for their use at room-temperatures. These Bose-Einstein Condensation interferometry techniques include quantum scale metrology devices such as quasi-particle based linear accelerometers, gyroscopes, and Inertial Measurement Units that incorporate such interferometers. In the presence of additive white Gaussian noise, estimates are made for the Bias Instability, Angle Random Walk, and Velocity Random Walk of the device for purposes of quantum inertial sensing. Moreover, this disclosure relates to SQUIDs based on charged quasi-particles that can, in turn, be used to construct quantum computing elements such as quantum transistors, and quasi-particle circuits at room-temperatures. These quasi-particle circuits can be used to build analogs of electronic circuit elements, and offer an alternative to traditional electronics. Using a quasi-particle circuit, hysteresis can be achieved and controlled to build these new devices.
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