公开(公告)号：US10784192B2

公开(公告)日：2020-09-22

申请号：US16183057

申请日：2018-11-07

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Kevin G. Duesman

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/66 ,  H01L23/62 ,  H01L49/02 ,  H01L23/64 ,  H01L27/11578 ,  H01L27/11551

Abstract: Semiconductor devices having inductive structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a substrate and at least one circuit component coupled to the substrate. The semiconductor device can further include an inductive structure carried by the substrate and having a stack of alternating first and second layers. In some embodiments, the first layers comprise an oxide material and the second layers each include a coil of conductive material. The coils of conductive material can be electrically coupled (a) together to form an inductor and (b) to the at least one circuit component.

公开(公告)号：US20200212032A1

公开(公告)日：2020-07-02

申请号：US16234208

申请日：2018-12-27

Applicant: Micron Technology, Inc.

Inventor： Kevin G. Duesman ,  James E. Davis ,  Warren L. Boyer ,  Jeffrey P. Wright

IPC: H01L27/02 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to the first contact pad, and the substrate is electrically isolated from the second contact pad.

公开(公告)号：US10580767B2

公开(公告)日：2020-03-03

申请号：US16201811

申请日：2018-11-27

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  John B. Pusey ,  Zhiping Yin ,  Kevin G. Duesman

IPC: H01L27/02 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L49/02 ,  H01L27/115

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.

公开(公告)号：US10403585B2

公开(公告)日：2019-09-03

申请号：US16138003

申请日：2018-09-21

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Kevin G. Duesman ,  Jeffrey P. Wright ,  Warren L. Boyer

IPC: H01L23/60 ,  H01L23/538 ,  H01L25/04 ,  H01L23/00 ,  G11C5/02 ,  H01L25/065

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements, and a plated pad electrically coupling at least a part of the first contact pad to at least a part of the second contact pad. The substrate includes a substrate contact electrically coupled to the plated pad on the die.