公开(公告)号：US20130140615A1

公开(公告)日：2013-06-06

申请号：US13746402

申请日：2013-01-22

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Stephen J. Kramer ,  Gurtej S. Sandhu

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material and a multiferroic material in contact with the ferromagnetic storage material, wherein the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are located between a first electrode and a second electrode.

Abstract translation: 本文描述了旋转转矩传递（STT）存储单元结构和方法。 一个或多个STT存储器单元结构包括位于铁磁存储材料和与反铁磁材料接触的被钉扎铁磁材料和与铁磁存储材料接触的多铁性材料之间的隧道势垒材料，其中反铁磁材料铁磁存储材料 并且被钉扎的铁磁材料位于第一电极和第二电极之间。

公开(公告)号：US20130077378A1

公开(公告)日：2013-03-28

申请号：US13652957

申请日：2012-10-16

Applicant: Micron Technology, Inc.

Inventor： Stephen J. Kramer ,  Gurtej S. Sandhu

IPC: H01L29/82 ,  G11C11/22

CPC classification number: G11C11/161 ,  G11C11/1675 ,  G11C11/22 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

Abstract: Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material. The tunneling barrier material is a multiferroic material and the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.