公开(公告)号：US06937040B2

公开(公告)日：2005-08-30

申请号：US10776033

申请日：2004-02-10

Applicant: Yasuhiro Maeda ,  Fumikazu Takayanagi

Inventor： Yasuhiro Maeda ,  Fumikazu Takayanagi

IPC: G01R1/073 ,  G01R31/02

CPC classification number: G01R1/07385

Abstract: A probe module electrically coupled to a terminal of a device under test for sending and/or receiving a signal to and/or from the device under test, includes a first substrate, a probe pin provided on the first substrate to be in contact with the terminal of the device under test, a first signal transmission pattern formed on the first substrate, the first signal transmission pattern being electrically coupled to the probe pin, with a gap formed at the first signal transmission pattern not to transmit any electric signal, and a for short-circuiting or open-circuiting the gap of the first signal transmission pattern.

Abstract translation: 电耦合到被测器件的端子的探针模块，用于发送和/或接收来自被测器件的信号和/或从所述被测器件接收信号，所述探针模块包括第一衬底，设置在所述第一衬底上以与所述第一衬底接触的探针， 端子，形成在第一基板上的第一信号传输图案，第一信号传输模式电耦合到探针，具有形成在第一信号传输模式的间隙，不发送任何电信号，以及 用于短路或开路第一信号传输模式的间隙。

公开(公告)号：US06590479B2

公开(公告)日：2003-07-08

申请号：US09877953

申请日：2001-06-08

Applicant: Haruo Yoshida ,  Yasuhiro Maeda ,  Yoshihide Miyagawa

Inventor： Haruo Yoshida ,  Yasuhiro Maeda ,  Yoshihide Miyagawa

IPC: H01P104

CPC classification number: G01R1/0408 ,  G01R1/06772 ,  G01R1/07314

Abstract: The invention allows for testing by high velocity signals of high density LSIs prior to being packaged having an electrode spacing on the odder of 150 &mgr;m, for example. Coaxial transmission lines 13 for termination formed through a terminal support 11 are arranged in a two-dimensional array. Connected to one ends of the transmission lines 13 are one ends of contact pins 18 such as conductive whiskers while the other ends of the transmission lines 13 are connected to a transmission line block 61 of a three-dimensionally upwardly gradually broadening configuration through a connection plate 72 similar in construction to the terminal support 11. The transmission line block 61 holds high frequency transmission lines 62 for relay connected at one ends to the other ends of the coaxial transmission lines 13 and having spacings between the adjacent lines broadened at the other upper ends. The widely spaced upper ends of the transmission lines 62 are connected to a performance board (not shown). The contact pins 18 are about 0.3 to 0.5 mm in length and the characteristics impedance is maintained uniform over all the transmission lines 62. The terminal support 11 is replaceable.

Abstract translation: 本发明允许例如在具有150μm之外的电极间隔的封装之前通过高密度LSI的高速度信号进行测试。 通过端子支撑件11形成的用于端接的同轴传输线13被布置成二维阵列。 连接到传输线13的一端的是接触引脚18的一端，例如导电晶须，而传输线13的另一端通过连接板连接到三维向上逐渐变宽的传输线块61 72类似于结构与终端支撑11.传输线块61保持用于一端连接到同轴传输线13的另一端的继电器的高频传输线62，并且在另一个上端扩展的相邻线之间的间隔 。 传输线62的间隔较宽的上端连接到执行板（未示出）。 接触销18的长度为约0.3至0.5mm，并且特性阻抗在所有传输线62上保持均匀。终端支撑件11是可更换的。

公开(公告)号：US06508990B1

公开(公告)日：2003-01-21

申请号：US09354054

申请日：1999-07-15

Applicant: Haruo Yoshida ,  Michiaki Endo ,  Michio Niwano ,  Nobuo Miyamoto ,  Yasuhiro Maeda

Inventor： Haruo Yoshida ,  Michiaki Endo ,  Michio Niwano ,  Nobuo Miyamoto ,  Yasuhiro Maeda

IPC: B01J1908

CPC classification number: H01J37/32935 ,  B08B7/0035 ,  C23C14/02 ,  C23C14/547 ,  C23C16/02 ,  C23C16/52 ,  G01N21/9501 ,  G01N21/9503 ,  G01N21/9505 ,  H01L21/67253 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate treating method and apparatus which can perform in-situ monitoring of surface state of a semiconductor substrate. The substrate treating apparatus comprises substrate treating means for subjecting the substrate to a required treatment, means for condensing infrared radiation emitted by an infrared radiation source onto an outer peripheral part of the substrate and introducing the infrared radiation into the substrate, means for detecting the infrared radiation which has undergone multiple reflection inside the substrate and exited from the substrate, means for analyzing the detected infrared radiation, means for monitoring the surface state of the substrate, and control means for controlling the substrate treating means, based on the monitored surface state of the substrate.

Abstract translation: 一种能够对半导体衬底的表面状态进行原位监测的衬底处理方法和装置。 基板处理装置包括用于对基板进行所需处理的基板处理装置，用于将由红外线辐射源发射的红外线辐射聚集到基板的外周部分并将红外辐射引入基板的装置，用于检测红外线 在基板内经历多次反射并从基板排出的辐射，用于分析检测到的红外辐射的装置，用于监测基板的表面状态的装置，以及用于控制基板处理装置的控制装置，基于所监视的表面状态 底物。

公开(公告)号：US06424059B1

公开(公告)日：2002-07-23

申请号：US09611130

申请日：2000-07-06

Applicant: Hirohide Aoki ,  Yasuhiro Maeda ,  Mitsuo Matsumoto ,  Hiroyuki Hama

Inventor： Hirohide Aoki ,  Yasuhiro Maeda ,  Mitsuo Matsumoto ,  Hiroyuki Hama

IPC: H02B1345

CPC classification number: H02B13/0356 ,  Y10T307/779

Abstract: A gas insulated switching device including a series of pressure containers 1 and 4 mutually connected, in which a conductor 2 is positioned in an inside center, and an insulating and arc-extinguishing gas is filled in a space around the conductor 2, and a current transformer fabricated by Rogowskii coils for detecting a current passing through the conductor 2, the current transformer is attached to flanges of the pressure containers 1 and 4 via a metallic adaptor 5, wherein the current transformer is accommodated in a groove formed toward an inside of the metallic adaptor 5 and uses the metallic adaptor 5 to obtain an earth potential, whereby the gas insulated switching device having the current transformer with high accuracy can be miniaturized.

Abstract translation: 一种气体绝缘开关装置，包括相互连接的一系列压力容器1和4，其中导体2位于内部中心，并且绝缘和灭弧气体填充在导体2周围的空间中，并且电流 由Rogowskii线圈制造的用于检测通过导体2的电流的变压器，电流互感器通过金属适配器5附接到压力容器1和4的凸缘上，其中电流互感器被容纳在朝向内部形成的凹槽中 金属适配器5，并且使用金属适配器5获得接地电位，由此能够使具有高精度的电流互感器的气体绝缘开关装置小型化。

公开(公告)号：US5167758A

公开(公告)日：1992-12-01

申请号：US364558

申请日：1989-06-08

Applicant: Yasuhiro Maeda ,  Takashi Yokoyama ,  Ichiro Hide ,  Takeyuki Matsuyama ,  Keiji Sawaya

Inventor： Yasuhiro Maeda ,  Takashi Yokoyama ,  Ichiro Hide ,  Takeyuki Matsuyama ,  Keiji Sawaya

IPC: B22D19/08 ,  C30B11/00

CPC classification number: C30B29/06 ,  B22D19/08 ,  C30B11/00

Abstract: A method of forming a polycrystalline silicon layer on a semiconductor wafer is disclosed having the steps of placing the semiconductor wafers in a predetermined number of recesses formed on a mold body, then creating a mold by securing a mold cover in contact with the front surface of the mold body, rotating the mold by a rotor in the heating inert gas of a melting furnace, maintaining the wafer temperature in the range of 1300.degree. C. to 1350.degree. C., pouring heated melted silicon from an inlet opened at the center of the mold cover into a passage recessed at the center of the mold body, flowing the heated melted silicon radially by centrifugal force to fill the melted silicon in a laminated layer air gap formed between the surface of the wafer placed in the recess and the mold cover, cooling to solidify the melted silicon and obtain a product with the polycrystalline silicon layer formed from the melted silicon on the wafer, and opening the mold cover from the mold body to remove the product from the mold body. Thus, the method can readily form an accumulated layer of the thickness of 100 micron at an extremely high speed with sufficient economy.

Abstract translation: 公开了一种在半导体晶片上形成多晶硅层的方法，该方法具有以下步骤：将半导体晶片放置在形成在模体上的预定数量的凹槽中，然后通过将模具盖与前表面接触而形成模具 模具体，通过在熔化炉的加热惰性气体中的转子旋转模具，将晶片温度保持在1300℃至1350℃的范围内，从在中心开口的入口浇注加热的熔融硅 模具盖成为在模具主体的中心凹陷的通道，通过离心力使加热的熔融硅径向流动，以将填充在位于凹槽中的晶片表面与模具盖之间的层叠气隙中填充熔融的硅 冷却固化熔融的硅并获得由晶片上的熔融硅形成的多晶硅层的产品，并从模具体上打开模具盖以除去 产品从模具体。 因此，该方法可以以足够的经济性以极高的速度容易地形成厚度为100微米的累积层。

公开(公告)号：US4519764A

公开(公告)日：1985-05-28

申请号：US644548

申请日：1984-08-27

Applicant: Yasuhiro Maeda ,  Takashi Yokoyama ,  Shinichi Yagihashi

Inventor： Yasuhiro Maeda ,  Takashi Yokoyama ,  Shinichi Yagihashi

IPC: C01B33/02 ,  B28B1/54 ,  C30B11/00 ,  H01L31/04 ,  B29C5/04

CPC classification number: C30B11/008 ,  C30B11/00 ,  C30B29/06 ,  C30B29/605

Abstract: A method of fabricating a polycrystalline silicon wafer, which method advantageously has the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray, and the wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold as the conventional method.

Abstract translation: 一种制造多晶硅晶片的方法，该方法有利地具有通过离心力将硅基材料的熔融液体径向向外流动在转台机构的晶片形成表面上的步骤，从而在规定的条件下形成薄的熔融液体层 气氛，冷却固化相同。 用于制造晶片的装置用于利用布置在晶片形成表面处的用于接收过量硅液体散射的回收托盘和放置在回收托盘上的晶片托盘来执行该方法，并且用冷却剂冷却晶片形成表面 在晶片形成机构中流动。 因此，作为常规方法，可以从铸模的内表面的气氛以自由状态在晶片上生长大晶粒。