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公开(公告)号：US09857313B2
公开(公告)日：2018-01-02
申请号：US15515227
申请日：2015-09-29
申请人： UNITY SEMICONDUCTOR
CPC分类号： G01N21/9505 , G01B11/2441 , G01M11/331 , G01N21/8806 , G01N21/8851 , G01N21/9501 , G01N21/9503 , G01N2021/8874
摘要： A method for inspecting a wafer, includes: rotating the wafer about an axis of the wafer, emitting from a light source, two pairs of incident coherent light beams, each pair forming, at the intersection between the two beams, a measurement volume, a portion of the main wafer surface passing through each of the measurement volumes during the rotation, collecting a light beam scattered by the wafer surface, capturing the collected light and emitting an electrical signal representing the variation in the collected light intensity, detecting in the signal, a frequency, being the time signature of a defect through a respective measurement volume, for each detected signature, determining a visibility parameter, on the basis of the visibility determined, obtaining an item of information on the size of the defect, and cross-checking the items of information to determine the size of the defect.
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公开(公告)号：US09551670B2
公开(公告)日：2017-01-24
申请号：US14249512
申请日：2014-04-10
发明人： Ichiro Ishimaru , Minori Noguchi , Ichiro Moriyama , Yoshikazu Tanabe , Yasuo Yatsugake , Yukio Kenbou , Kenji Watanabe , Hirofumi Tsuchiyama
CPC分类号： G01N21/88 , G01N21/474 , G01N21/94 , G01N21/9501 , G01N21/9503 , G01N2021/8825 , G01N2021/8854
摘要： A defect inspection apparatus including: a first illumination optical system which is configured to illuminate the inspection area on a sample surface from a normal line direction or a direction near thereof with respect to said sample surface; a second illumination optical system which is configured to illuminate said inspection area from a slant direction with respect to said sample surface; a detection optical system having a plurality of first detectors which are located, in front of, on the sides of, and behind said inspection area, respectively, with respect to the illumination direction of said second illumination optical system, and where the regular reflected light component, from said sample surface, by illumination light of said second illumination optical system, is not converged; and a signal processing system which is configured to inspect a defect, upon basis of signals obtained from said plurality of first detectors.
摘要翻译： 一种缺陷检查装置，包括：第一照明光学系统，被配置为从相对于所述样品表面的法线方向或近似的方向照射样品表面上的检查区域; 第二照明光学系统，被配置为相对于所述样品表面从倾斜方向照射所述检查区域; 检测光学系统，具有分别相对于所述第二照明光学系统的照明方向位于所述检查区域的所述检查区域的前方和后方的多个第一检测器，并且其中所述规则反射光 从所述样品表面通过所述第二照明光学系统的照明光分量不会收敛; 以及信号处理系统，其被配置为基于从所述多个第一检测器获得的信号来检查缺陷。
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公开(公告)号：US09377416B2
公开(公告)日：2016-06-28
申请号：US14709427
申请日：2015-05-11
发明人： Ivan Maleev , Venkata Kode
CPC分类号： G01N21/9503 , G01N21/47 , G01N21/55 , G01N2201/025 , G01N2201/061
摘要： Methods and systems for determining wafer inspection coordinates for fixed location(s) on a wafer are provided. One system includes an illumination subsystem configured to direct light to a spot on an edge of a wafer. The spot extends beyond the edge of the wafer. The system also includes a stage that rotates the wafer thereby causing the spot to be scanned over the edge of the wafer. The system also includes a detector configured to detect light from the spot while the spot is being scanned over the edge and to generate output responsive thereto. The system further includes a computer processor configured to determine wafer inspection coordinates of two or more locations on the edge of the wafer based on the output and to determine wafer inspection coordinates of fixed location(s) on the wafer based on the wafer inspection coordinates of the two or more locations on the edge.
摘要翻译： 提供了用于确定晶片上固定位置的晶片检查坐标的方法和系统。 一个系统包括被配置为将光引导到晶片边缘上的点的照明子系统。 斑点延伸超过晶片的边缘。 该系统还包括使晶片旋转的台，从而使光斑在晶片的边缘上扫描。 该系统还包括检测器，其被配置为在斑点被扫描在边缘上时检测来自斑点的光并且响应于此产生输出。 该系统还包括计算机处理器，其被配置为基于输出来确定晶片边缘上的两个或更多个位置的晶片检查坐标，并且基于晶片的晶片检查坐标来确定晶片上固定位置的晶片检查坐标 边缘上的两个或多个位置。
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公开(公告)号：US20160069814A1
公开(公告)日：2016-03-10
申请号：US14927291
申请日：2015-10-29
发明人： David M. Tung , Joachim W. Ahner
IPC分类号： G01N21/88
CPC分类号： G01N21/8806 , G01N21/88 , G01N21/9503 , G01N21/9506 , G01N2201/061
摘要： Provided herein is an apparatus, including a photon emitter and a photon detector array. The photon emitter is configured to emit photons onto an entire surface edge of an article. The photon detector array is configured to receive scattered photons from the entire surface edge of the article, and includes a number of photon detectors. The scattered photons are photons emitted from the photon emitter that are scattered from features of the surface edge of the article.
摘要翻译： 本文提供了一种包括光子发射器和光子检测器阵列的装置。 光子发射器被配置为将光子发射到物品的整个表面边缘上。 光子检测器阵列被配置为从物品的整个表面边缘接收散射的光子，并且包括多个光子检测器。 散射的光子是从光子发射器发射的从物体的表面边缘的特征散射的光子。
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5.发明申请公开(公告)号：US20150370175A1
公开(公告)日：2015-12-24
申请号：US14741866
申请日：2015-06-17
发明人： Lena Nicolaides , Ben-ming Benjamin Tsai , Prashant A. Aji , Michael Gasvoda , Stanley E. Stokowski , Guoheng Zhao , Youxian Wen , Mohan Mahadevan , Paul D. Horn , Wolfgang Vollrath , Isabella T. Lewis
CPC分类号： G01N21/9503 , G01N2201/06113 , G03F7/7085 , H01L22/12
摘要： Disclosed are methods and apparatus for inspecting and processing semiconductor wafers. The system includes an edge detection system for receiving each wafer that is to undergo a photolithography process. The edge detection system comprises an illumination channel for directing one or more illumination beams towards a side, top, and bottom edge portion that are within a border region of the wafer. The edge detection system also includes a collection module for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer and an analyzer module for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer. The photolithography system is configured for receiving from the edge detection system each wafer that has been found to be within specification. The edge detection system is coupled in-line with the photolithography system.
摘要翻译： 公开了用于检查和处理半导体晶片的方法和装置。 该系统包括边缘检测系统，用于接收将进行光刻工艺的每个晶片。 边缘检测系统包括用于将一个或多个照明光束朝向位于晶片的边界区域内的侧面，顶部和底部边缘部分引导的照明通道。 边缘检测系统还包括用于收集和感测从晶片的边缘部分散射或反射的输出辐射的收集模块和用于定位边缘部分中的缺陷的分析器模块，并且基于所感测到的每个晶片是否在规格范围内 这种晶片的输出辐射。 光刻系统被配置为从边缘检测系统接收已发现在规格范围内的每个晶片。 边缘检测系统与光刻系统成对连接。
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公开(公告)号：US20150355106A1
公开(公告)日：2015-12-10
申请号：US14731861
申请日：2015-06-05
发明人： Paul D. Horn
CPC分类号： G01N21/9503 , G01N21/47 , G01N21/8806 , G01N2021/8816 , G01N2201/062 , G01N2201/0634 , G01N2201/068
摘要： Disclosed are methods and apparatus for imaging a rounded edge of a sample, such as a wafer with a beveled edge. In one embodiment, the system includes a curved diffuser having an internal surface for positioning towards the rounded edge of the sample and an external surface opposite the internal surface and light sources for generating a plurality of illumination beams adjacent to a plurality of positions on the external surface of the diffuser so that the diffuser outputs uniform light onto the rounded edge of the sample at a wide range of incident angles. The system further includes a sensor for receiving light scattered from the rounded edge of the sample in response to the incident light and generating a detected signal for generating an image. These elements are partially or entirely integrated into a compact assembly.
摘要翻译： 公开了用于对样品的圆形边缘成像的方法和装置，例如具有斜边的晶片。 在一个实施例中，系统包括弯曲扩散器，其具有用于朝向样品的圆形边缘定位的内表面和与内表面相对的外表面和用于产生与外部多个位置相邻的多个照明光束的光源 扩散器的表面，使得漫射器在宽的入射角范围内将均匀的光输出到样品的圆形边缘上。 该系统还包括用于响应入射光接收从样品的圆形边缘散射的光并产生用于产生图像的检测信号的传感器。 这些元件部分或完全集成到紧凑的组件中。
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公开(公告)号：US20150330914A1
公开(公告)日：2015-11-19
申请号：US14709427
申请日：2015-05-11
发明人： Ivan Maleev , Venkata Kode
CPC分类号： G01N21/9503 , G01N21/47 , G01N21/55 , G01N2201/025 , G01N2201/061
摘要： Methods and systems for determining wafer inspection coordinates for fixed location(s) on a wafer are provided. One system includes an illumination subsystem configured to direct light to a spot on an edge of a wafer. The spot extends beyond the edge of the wafer. The system also includes a stage that rotates the wafer thereby causing the spot to be scanned over the edge of the wafer. The system also includes a detector configured to detect light from the spot while the spot is being scanned over the edge and to generate output responsive thereto. The system further includes a computer processor configured to determine wafer inspection coordinates of two or more locations on the edge of the wafer based on the output and to determine wafer inspection coordinates of fixed location(s) on the wafer based on the wafer inspection coordinates of the two or more locations on the edge.
摘要翻译： 提供了用于确定晶片上固定位置的晶片检查坐标的方法和系统。 一个系统包括被配置为将光引导到晶片边缘上的点的照明子系统。 斑点延伸超过晶片的边缘。 该系统还包括使晶片旋转的台，从而使光斑在晶片的边缘上扫描。 该系统还包括检测器，其被配置为在斑点被扫描在边缘上时检测来自斑点的光并且响应于此产生输出。 该系统还包括计算机处理器，其被配置为基于输出来确定晶片边缘上的两个或更多个位置的晶片检查坐标，并且基于晶片的晶片检查坐标来确定晶片上固定位置的晶片检查坐标 边缘上的两个或多个位置。
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8.发明授权Device for noncontact determination of edge profile at a thin disk-shaped object 有权用于非接触式确定薄盘形物体处的边缘轮廓的装置公开(公告)号：US09106807B2
公开(公告)日：2015-08-11
申请号：US13757957
申请日：2013-02-04
发明人： Axel Gaglin , Thomas Becker , Frank Richter , Bernd Gey
IPC分类号： G01N21/00 , H04N7/18 , G01N21/95 , G01N21/956 , G01B11/25
CPC分类号： H04N7/18 , G01B11/25 , G01N21/9503 , G01N21/956
摘要： A device for noncontact determination of the edge profile at a thin disk-shaped object helps determining the edge profile at semiconductor wafers in which exact image recording is not impaired by specular reflections of the edge profile. A plurality of light sources in the form of laser radiation sources each emitting a line-shaped light bundle are arranged so as to be coplanar in a common plane representing a measurement plane oriented orthogonal to a base plane of the object and are directed from different directions to a common intersection of the laser radiation sources in the edge region of the object. A light sheet is formed in the measurement plane and at least one base camera is directed in the base plane lateral to the measurement plane to capture scattered light proceeding from a light line generated by the light sheet when impinging the object edge region.
摘要翻译： 用于非接触确定薄盘形物体处的边缘轮廓的装置有助于确定半导体晶片处的边缘轮廓，其中精确图像记录不会受到边缘轮廓的镜面反射的损害。 排列成线状的光束的激光放射源的形式的多个光源配置成共同的平面，表示与物体的基面垂直取向的测定面，从不同方向 到物体的边缘区域中的激光辐射源的公共交叉点。 在测量平面中形成光片，并且至少一个基本照相机被引导到测量平面的横向的基准面中，以便在撞击物体边缘区域时捕获从由光片产生的光线进行的散射光。
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9.发明申请INSPECTION SYSTEM AND METHOD FOR INSPECTING LINE WIDTH AND/OR POSITIONAL ERRORS OF A PATTERN 有权用于检查图案的线宽和/或位置错误的检查系统和方法公开(公告)号：US20150193918A1
公开(公告)日：2015-07-09
申请号：US14665880
申请日：2015-03-23
发明人： Takanao TOUYA , Shuichi Tamamushi , Hidenori Sato , Hiroyuki Tanizaki , Takeshi Fujiwara , Eiji Sawa , Kentaro Okuda , Hiroyuki Ikeda , Hiromu Inoue , Hiroshi Tsukada
IPC分类号： G06T7/00
CPC分类号： G06T7/001 , G01N21/9501 , G01N21/9503 , G01N21/956 , G06T7/0004 , G06T7/0006 , G06T7/70 , G06T7/74 , G06T2207/10004 , G06T2207/30141 , G06T2207/30148
摘要： A method and system for imaging an object to be inspected and obtaining an optical image; creating a reference image from design pattern data; preparing an inspection recipe including one or more templates and parameter settings necessary for the inspection; checking the pattern and the template against each other, and selecting the reference image which corresponds to the template; detecting first and second edges in the selected reference image in accordance with the parameter setting using determined coordinates as a reference; detecting first and second edges in the optical image, this optical image corresponds to the selected reference image; and determining an inspection value by acquiring the difference between the line width of the optical image and the reference image using the first edge and second edge of the reference image and the first edge and second edges of the optical image.
摘要翻译： 一种用于对待检查对象进行成像并获得光学图像的方法和系统; 从设计模式数据创建参考图像; 准备包括一个或多个模板和检查所需的参数设置的检查配方; 检查图案和模板，并选择与模板对应的参考图像; 根据使用确定的坐标作为参考的参数设置来检测所选参考图像中的第一和第二边缘; 检测光学图像中的第一和第二边缘，该光学图像对应于所选择的参考图像; 以及通过使用参考图像的第一边缘和第二边缘以及光学图像的第一边缘和第二边缘获取光学图像的线宽和参考图像之间的差来确定检查值。
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10.发明授权Method for optical inspection, detection and analysis of double sided wafer macro defects 有权双面晶圆宏观缺陷的光学检测，检测和分析方法公开(公告)号：US09013688B2
公开(公告)日：2015-04-21
申请号：US14071354
申请日：2013-11-04
发明人： Moshe Gutman
CPC分类号： G06T7/0004 , G01N21/47 , G01N21/9501 , G01N21/9503 , G01N2021/8825
摘要： A method of automatic optical self-contained inspection for detection of macro defects of sub-pixel defect size in pattern wafers and non-pattern wafers is based on surface light scattering color-intensity computerized analysis. The method includes setting-up initial calibration and deriving correction data. A wafer image is acquired and rendered and compensated for lighting intensity and optical sensor sensitivity color spectra biases and spatial variances prior to displaying the inspection results.
摘要翻译： 用于检测图案晶片和非图案晶片中的子像素缺陷尺寸的宏观缺陷的自动光学独立检查的方法基于表面光散射色强计算机分析。 该方法包括设置初始校准和导出校正数据。 在显示检查结果之前，获取并渲染和补偿晶片图像的照明强度和光学传感器灵敏度色谱偏差和空间方差。
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