公开(公告)号：US12049401B2

公开(公告)日：2024-07-30

申请号：US17874771

申请日：2022-07-27

申请人： THE UNIVERSITY OF ELECTRO-COMMUNICATIONS ,  NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY

发明人： Takahiro Tsukamoto ,  Takahide Oya ,  Taku Onishi

IPC分类号： C01B32/154 ,  C30B29/60

CPC分类号： C01B32/154 ,  C30B29/605

摘要： Provided is a fullerene structure including: a column-shaped part; and a fin part projecting from the column-shaped part, in which both of the column-shaped part and the fin part are fullerenes. Provided is a method of manufacturing a fullerene structure including: heating a fullerene raw material to a sublimable temperature or higher under a non-oxidizing gas; and cooling an atmosphere in which the fullerene raw material is heated. In one example, the method includes supplying the non-oxidizing gas in one direction; heating the fullerene raw material to the sublimable temperature or higher at an upstream side of a supply direction of the non-oxidizing gas; and cooling the atmosphere in which the fullerene raw material is heated at a downstream side of the supply direction of the non-oxidizing gas.

公开(公告)号：US20240191396A1

公开(公告)日：2024-06-13

申请号：US18285099

申请日：2022-03-31

申请人： University of Copenhagen ,  Danmarks Tekniske Universitet

发明人： Joachim Elbeshausen Sestoft ,  Thomas Kanne Nordqvist ,  Mikelis Marnauza ,  Aske Nørskov Gejl ,  Dags Olsteins ,  Kasper Grove-Rasmussen ,  Jesper Nygård

IPC分类号： C30B29/60 ,  C30B11/12 ,  C30B29/40 ,  C30B29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66 ,  H01L29/76 ,  H01L31/0352 ,  H01L33/06 ,  H10N60/12

CPC分类号： C30B29/605 ,  C30B11/12 ,  C30B29/40 ,  C30B29/66 ,  H01L29/0665 ,  H01L29/20 ,  H01L29/66977 ,  H01L29/7613 ,  H01L31/035227 ,  H01L33/06 ,  H10N60/12

摘要： The present disclosure relates to a method of manufacturing a transferable lamella comprising interconnected nanostructures, the method comprising the steps of: a) providing a substrate such as a planar substrate; b) forming at least one superstructure on the substrate, said superstructure comprising a plurality of elongated nanostructures (formed e.g. by growth, deposition, and/or etching); wherein the elongated nanostructures are formed such that at least two of said nanostructures are conductively interconnected, and/or wherein at least a first layer is grown or deposited to conductively interconnect or insulate at least a part of the elongated nanostructures; c) encapsulating at least a portion of said superstructure in an encapsulating material, said portion comprising at least two interconnected nanostructures; and d) cutting the encapsulating material in a direction that intersects at least two interconnected nanostructures, thereby manufacturing a transferable lamella comprising interconnected nanostructures. The present disclosure further relates to an electronic device manufactured from one or more of the lamellas provided by the method.

公开(公告)号：US10067242B2

公开(公告)日：2018-09-04

申请号：US15221857

申请日：2016-07-28

申请人： CANON KABUSHIKI KAISHA

发明人： Yohei Ishida ,  Tamaki Kobayashi ,  Tomoaki Ichimura

IPC分类号： G01T1/20 ,  C30B25/02 ,  C30B29/12 ,  C30B29/60 ,  C30B33/00 ,  G01T1/202

CPC分类号： G01T1/2018 ,  C30B25/02 ,  C30B29/12 ,  C30B29/605 ,  C30B33/00 ,  G01T1/202

摘要： A method of manufacturing a scintillator, includes growing a scintillator layer constituted by a plurality of column crystals on a base, forming a first protection film so as to cover the scintillator layer, planarizing the first protection film, the planarizing including a polishing process of polishing the first protection film, and forming a second protection film configured to cover the first protection film that has undergone the planarizing. The scintillator layers grown on the base include an abnormally grown portion. In the polishing process, a front end of the abnormally grown portion is polished as well as a surface of the first protection film so as to form a continuation surface by the surface of the first protection film and a surface of the abnormally grown portion.

公开(公告)号：US09991342B2

公开(公告)日：2018-06-05

申请号：US14438497

申请日：2013-10-25

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ALEDIA

发明人： Bérangère Hyot ,  Benoit Amstatt ,  Marie-Françoise Armand ,  Florian Dupont

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L33/04 ,  B82Y10/00 ,  B82Y40/00 ,  C30B25/00 ,  C30B25/18 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B29/60 ,  H01L29/40 ,  H01L29/66 ,  H01L29/41 ,  H01L33/16 ,  H01L33/12 ,  B82Y99/00 ,  H01L33/24

CPC分类号： H01L29/0676 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  C30B25/005 ,  C30B25/183 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B29/406 ,  C30B29/605 ,  H01L21/02104 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L29/401 ,  H01L29/413 ,  H01L29/6609 ,  H01L33/04 ,  H01L33/12 ,  H01L33/16 ,  H01L33/24 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/932

摘要： The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

公开(公告)号：US20170355023A1

公开(公告)日：2017-12-14

申请号：US15675295

申请日：2017-08-11

申请人： BASF SE

发明人： Yuliang WANG ,  Janet Cravens DICKERSON

IPC分类号： B22F9/24 ,  C22C5/06 ,  C30B29/02 ,  B22F1/00 ,  C22B3/00 ,  C30B7/14 ,  C30B29/60

CPC分类号： B22F9/24 ,  B22F1/004 ,  B22F1/0044 ,  B22F2301/255 ,  B22F2998/00 ,  C22B11/04 ,  C22C5/06 ,  C30B7/14 ,  C30B29/02 ,  C30B29/605 ,  Y10S977/896 ,  B22F1/0025

摘要： Embodiments of the present invention are directed to novel methods for the solution-based production of silver nanowires by adaptation of the polyol process. Some embodiments of the present invention can be practiced at lower temperature and/or at higher concentration than previously described methods. In some embodiments reactants are added in solid form rather than in solution. In some embodiments, an acid compound is added to the reaction.

公开(公告)号：US09751130B2

公开(公告)日：2017-09-05

申请号：US14341784

申请日：2014-07-26

申请人： BASF SE

发明人： Yuliang Wang ,  Janet Cravens Dickerson

IPC分类号： B22F9/24 ,  C22C5/06 ,  C30B7/14 ,  C30B29/02 ,  C30B29/60 ,  B22F1/00 ,  C22B3/00

CPC分类号： B22F9/24 ,  B22F1/004 ,  B22F1/0044 ,  B22F2301/255 ,  B22F2998/00 ,  C22B11/04 ,  C22C5/06 ,  C30B7/14 ,  C30B29/02 ,  C30B29/605 ,  Y10S977/896 ,  B22F1/0025

摘要： Embodiments of the present invention are directed to novel methods for the solution-based production of silver nanowires by adaptation of the polyol process. Some embodiments of the present invention can be practiced at lower temperature and/or at higher concentration than previously described methods. In some embodiments reactants are added in solid form rather than in solution. In some embodiments, an acid compound is added to the reaction.

公开(公告)号：US09680039B2

公开(公告)日：2017-06-13

申请号：US14300614

申请日：2014-06-10

申请人： QuNano AB

发明人： Lars Ivar Samuelson ,  Bjorn Jonas Ohlsson

IPC分类号： H01L31/0352 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B25/00 ,  C30B25/02 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/60 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66 ,  H01L29/737 ,  H01L29/88 ,  H01L33/04 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/068

CPC分类号： H01L31/035227 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B25/00 ,  C30B25/02 ,  C30B25/14 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/20 ,  H01L29/66318 ,  H01L29/7371 ,  H01L29/882 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/068 ,  H01L33/04 ,  Y02E10/547 ,  Y10S977/762 ,  Y10S977/763

摘要： A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.

公开(公告)号：US20170022627A1

公开(公告)日：2017-01-26

申请号：US15217387

申请日：2016-07-22

申请人： Nanoco Technologies Ltd.

发明人： Paul O'Brien ,  Nigel Pickett

IPC分类号： C30B7/10 ,  C30B29/48 ,  C30B7/00 ,  C01B19/00 ,  C09K11/88

CPC分类号： C09K11/883 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/60 ,  C09K11/02 ,  C09K11/025 ,  C09K11/565 ,  C09K11/621 ,  C09K11/70 ,  C09K11/7492 ,  C09K11/881 ,  C09K11/892 ,  C30B7/00 ,  C30B7/005 ,  C30B7/10 ,  C30B29/48 ,  C30B29/605 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95 ,  Y10T428/12861 ,  Y10T428/2982 ,  Y10T428/2989 ,  Y10T428/2991 ,  Y10T428/32

摘要： A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.

摘要翻译： 制备纳米颗粒的方法包括使分子簇化合物转化为纳米颗粒的材料。 分子簇化合物包含要并入生长的纳米颗粒中的第一离子和第二离子。 在允许通过消耗第一分子簇化合物接种和生长纳米颗粒的条件下，可以在包含第三离子和第四离子的第二分子簇化合物存在下进行转化，所述第三离子和第四离子将并入生长的纳米颗粒中。

公开(公告)号：US09548418B2

公开(公告)日：2017-01-17

申请号：US15016722

申请日：2016-02-05

申请人： NGK INSULATORS, LTD.

发明人： Morimichi Watanabe ,  Jun Yoshikawa ,  Tsutomu Nanataki ,  Katsuhiro Imai ,  Tomohiko Sugiyama ,  Takashi Yoshino ,  Yukihisa Takeuchi ,  Kei Sato

IPC分类号： H01L33/32 ,  H01L33/00 ,  H01L33/16 ,  C30B29/40 ,  C30B19/12 ,  C30B9/00 ,  C30B25/20 ,  C30B19/02 ,  H01L33/18 ,  C30B9/12 ,  C30B25/18 ,  C30B28/04 ,  C30B29/60

CPC分类号： H01L33/18 ,  C30B9/00 ,  C30B9/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/20 ,  C30B28/04 ,  C30B29/406 ,  C30B29/605 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32

摘要： Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.

摘要翻译： 提供了可用作氮化镓单晶衬底的替代材料的自支撑氮化镓衬底，其价格便宜并且也适合于具有大的面积。 该基板由氮化镓系单晶粒构成的板构成，其中，在大致正方向上具有单晶结构。 该基板可以通过包括提供取向多晶烧结体的方法制造; 在所述烧结体上形成由氮化镓构成的籽晶层，使得所述晶种层的结晶取向主要与所述烧结体的晶体取向一致; 在晶种层上形成由氮化镓系晶体构成的厚度为20μm以上的层，使得该层的结晶取向主要与晶种层的晶体取向一致; 并除去烧结体。

公开(公告)号：US20170009378A1

公开(公告)日：2017-01-12

申请号：US15114364

申请日：2014-01-28

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Masatomo SHIBATA ,  Takehiro YOSHIDA ,  Toshio KITAMURA ,  Yukio ABE

IPC分类号： C30B33/00 ,  C30B29/40 ,  B28D5/04 ,  H01L29/20 ,  H01L29/04 ,  B28D5/02 ,  C30B25/02 ,  C30B29/60

CPC分类号： C30B33/00 ,  B28D5/021 ,  B28D5/047 ,  C30B23/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  C30B33/06 ,  H01L29/045 ,  H01L29/2003

摘要： A semiconductor substrate manufacturing method includes: epitaxially growing a columnar III nitride semiconductor single crystal on a principal place of a circular substrate; removing a hollow cylindrical region at an outer peripheral edge side of the III nitride semiconductor single crystal to leave a solid columnar region at an inside of the hollow cylindrical region of the III nitride semiconductor single crystal; and slicing the solid columnar region after removing the hollow cylindrical region. The hollow cylindrical region is removed such that the shape of the III nitride semiconductor single crystal is always keeps an axial symmetry that a center axis of the III nitride semiconductor single crystal is defined as a symmetric axis.

摘要翻译： 半导体衬底制造方法包括：在圆形衬底的主要位置上外延生长柱状III族氮化物半导体单晶; 去除III族氮化物半导体单晶的外周边缘侧的中空圆柱形区域，以在III族氮化物半导体单晶的中空圆柱形区域的内侧留下实心柱状区域; 并且在去除中空圆柱形区域之后切割固体柱状区域。 去除中空的圆柱形区域，使得III族氮化物半导体单晶的形状总是保持将III族氮化物半导体单晶的中心轴定义为对称轴的轴向对称。