公开(公告)号：US06702950B2

公开(公告)日：2004-03-09

申请号：US10004299

申请日：2001-11-02

申请人： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

发明人： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

IPC分类号： B81C100

CPC分类号： B05B5/00 ,  H01J49/0018 ,  H01J49/167 ,  Y10S438/942

摘要： Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.

摘要翻译： 公开了本发明的三个基本和三个派生方面。 三个基本方面各自公开了可以整合到完整过程中的过程序列。 第一方面，被指定为“潜屏蔽”，定义了在固定材料（例如氧化硅）中的掩模，该掩模在定义之后被保持为静止，而执行中间处理操作。 然后将潜在氧化物图案用于掩模蚀刻。 指定为“同时多级蚀刻（SMILE）”的第二方面提供了一种处理顺序，其中在蚀刻到下面的材料中第一图案可相对于第二图案被赋予高级开始，使得第一图案可以是 蚀刻成更深，更浅或与第二图案相同的深度。 指定为“延迟LOCOS”的第三方面提供了在过程的一个阶段定义接触孔图案的方法，然后在稍后阶段使用限定的图案来打开接触孔。 第四方面提供了一个整合三个基本方面来制造液相色谱（LC）/电喷雾离子化（ESI）装置的方法。 第五方面提供了一种结合两个基本方面来制造ESI装置的过程序列。 第六方面提供了一种结合两个基本方面来制造LC器件的过程序列。 与先前公开的制造方法相比，所描述的工艺改进提供了增加的制造产量和设计自由度。

公开(公告)号：US06464892B2

公开(公告)日：2002-10-15

申请号：US10003672

申请日：2001-11-02

申请人： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

发明人： James E. Moon ,  Timothy J. Davis ,  Gregory J. Galvin ,  Kevin A. Shaw ,  Paul C. Waldrop ,  Sharlene A. Wilson

IPC分类号： H01L2100

CPC分类号： B05B5/00 ,  H01J49/0018 ,  H01J49/167 ,  Y10S438/942

摘要： Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.