公开(公告)号：US11004518B2

公开(公告)日：2021-05-11

申请号：US16456045

申请日：2019-06-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Kiyohiko Sakakibara ,  Hiroki Yabe ,  Ken Oowada ,  Masaaki Higashitani

IPC: G11C16/26 ,  G11C16/04 ,  G11C16/24 ,  H01L27/11524 ,  H01L27/1157 ,  G11C16/34 ,  G11C11/56 ,  H01L27/11565 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11519

Abstract: Methods for reducing read disturb using NAND strings with poly-silicon channels and p-type doped source lines are described. During a boosted read operation for a selected memory cell transistor in a NAND string, a back-gate bias or bit line voltage may be applied to a bit line connected to the NAND string and a source line voltage greater than the bit line voltage may be applied to a source line connected to the NAND string; with these bias conditions, electrons may be injected from the bit line and annihilated in the source line during the read operation. To avoid leakage currents through NAND strings in non-selected memory blocks, the threshold voltages of source-side select gate transistors of the NAND strings may be set to a negative threshold voltage that has an absolute voltage value greater than the source line voltage applied during the read operation.

公开(公告)号：US20210134828A1

公开(公告)日：2021-05-06

申请号：US16675800

申请日：2019-11-06

Applicant: SanDisk Technologies LLC

Inventor： Naoki Ookuma ,  Hiroki Yabe ,  Koichiro Hayashi ,  Takuya Ariki ,  Toru Miwa

IPC: H01L27/11582 ,  H01L23/528 ,  H01L27/11526 ,  H01L27/11556 ,  H01L21/02 ,  H01L21/28 ,  H01L27/11573

Abstract: A non-volatile memory apparatus is provided and includes a substrate having a major surface extending longitudinally. A stack of first and second sets of word lines and insulating layers extends along and over the major surface longitudinally and alternating with and overlying one another vertically to define a device region. The first and second sets of word lines each respectively extends longitudinally beyond a first and second side of the device region a decreasing longitudinal distance from the device region as a vertical distance from the major surface increases to define first and second stepped contact regions. Word line contacts extend vertically in the first and second stepped contact regions. The second set of word lines in the first stepped contact region do not contact the word line contacts and the first set of word lines in the second stepped contact region do not contact the word line contacts.

公开(公告)号：US10910044B2

公开(公告)日：2021-02-02

申请号：US16146135

申请日：2018-09-28

Applicant: SanDisk Technologies LLC

Inventor： Hiroki Yabe ,  Masahiro Kano

IPC: G11C11/34 ,  G11C11/56 ,  G06F11/10

Abstract: An apparatus includes a pair of memory cells configured to represent data using joint data states where one of the joint data states comprises an error-prone joint data state. The apparatus further includes an encoder configured to convert user data into joint data states according to a dual-cell gray-code encoding scheme in which the error-prone joint data state does not encode user data.