公开(公告)号：US20160349904A1

公开(公告)日：2016-12-01

申请号：US15159020

申请日：2016-05-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Susumu KAWASHIMA ,  Shunpei YAMAZAKI

IPC: G06F3/041 ,  H01L27/32 ,  G06F3/044 ,  H01L27/12

Abstract: A semiconductor device including a transistor includes a pixel circuit, a monitor circuit, and a correction circuit. The pixel circuit includes a selection transistor, a driving transistor, and a light-emitting element. The monitor circuit includes a monitor light-emitting element and a monitor transistor. The semiconductor device obtains the value of current flowing to the monitor light-emitting element and the monitor transistor and controls the value of current flowing to the light-emitting element and the driving transistor by the correction circuit.

Abstract translation: 包括晶体管的半导体器件包括像素电路，监视电路和校正电路。 像素电路包括选择晶体管，驱动晶体管和发光元件。 监视电路包括监视发光元件和监视晶体管。 半导体器件获得流向监视发光元件和监视晶体管的电流值，并通过校正电路控制流向发光元件和驱动晶体管的电流值。

公开(公告)号：US20160329392A1

公开(公告)日：2016-11-10

申请号：US15140544

申请日：2016-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE

IPC: H01L27/32 ,  G09G3/3258 ,  G09G3/3233 ,  H01L29/786

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G3/3258 ,  G09G2300/0426 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/0233 ,  G09G2320/043 ,  G09G2330/021 ,  H01L29/78648 ,  H01L29/7869

Abstract: A display device includes a transistor including first and second gates. A first terminal of the transistor is electrically connected to a third wiring. A first switch controls electrical connection between a first wiring and the first gate. A second switch controls electrical connection between a second wiring and the second gate. A third switch controls electrical connection between the first gate and a second terminal of the transistor. A fourth switch controls electrical connection between a fifth wiring and the second terminal of the transistor. A first capacitor retains a potential difference between the first gate and the second terminal of the transistor. A second capacitor retains a potential difference between the first gate and the second gate. A first terminal of the light-emitting element is electrically connected to the second terminal of the transistor. A second terminal of the light-emitting element is electrically connected to a fourth wiring.

Abstract translation: 显示装置包括包括第一和第二栅极的晶体管。 晶体管的第一端子电连接到第三布线。 第一开关控制第一布线和第一栅极之间的电连接。 第二开关控制第二布线和第二栅极之间的电连接。 第三开关控制晶体管的第一栅极和第二端子之间的电连接。 第四开关控制第五布线和晶体管的第二端之间的电连接。 第一电容器保持晶体管的第一栅极和第二端子之间的电位差。 第二电容器保持第一栅极和第二栅极之间的电位差。 发光元件的第一端子电连接到晶体管的第二端子。 发光元件的第二端子电连接到第四布线。

公开(公告)号：US20160322504A1

公开(公告)日：2016-11-03

申请号：US15147168

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

IPC: H01L29/786 ,  H01L27/12 ,  G09G3/36 ,  G11C19/28

CPC classification number: G11C19/28 ,  G02F1/136277 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/0297 ,  H01L27/1225 ,  H01L29/7869

Abstract: To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film.

Abstract translation: 提供具有高孔径比的半导体器件，并且包括具有高电荷电容的电容器。 提供具有窄边框的半导体器件。 衬底上的晶体管; 在其上提供晶体管的栅电极的表面上的第一导电膜; 在其上提供晶体管的一对电极的表面上的第二导电膜; 并且包括与第一导电膜和第二导电膜电连接的第一透光性导电膜。 第二导电膜与第二导电膜和第一导电膜之间的晶体管的栅极绝缘膜与第一导电膜重叠。

公开(公告)号：US20160260751A1

公开(公告)日：2016-09-08

申请号：US15058354

申请日：2016-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Yasuharu HOSAKA ,  Junichi KOEZUKA ,  Hiroyuki MIYAKE ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/1248 ,  H01L28/60 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a semiconductor device with high capacitance while the aperture ratio is increased or a semiconductor device whose manufacturing cost is low. The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film in contact with the gate electrode, a first oxide semiconductor film overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is over the first oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.

Abstract translation: 提供了开口率增加时具有高电容的半导体器件或制造成本低的半导体器件。 半导体器件包括晶体管，第一绝缘膜和在一对电极之间包括第二绝缘膜的电容器。 晶体管包括栅电极，与栅电极接触的栅极绝缘膜，与栅电极重叠的第一氧化物半导体膜，以及与第一氧化物半导体膜电连接的源电极和漏电极。 电容器的一对电极之一包括第二氧化物半导体膜。 第一绝缘膜在第一氧化物半导体膜上。 第二绝缘膜在第二氧化物半导体膜上方，使得第二氧化物半导体膜位于第一绝缘膜和第二绝缘膜之间。

公开(公告)号：US20160240683A1

公开(公告)日：2016-08-18

申请号：US15012403

申请日：2016-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Satoru SAITO

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L29/78696

Abstract: To reduce parasitic capacitance in a semiconductor device having a transistor including an oxide semiconductor. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide semiconductor film over the first gate insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The atomic proportion of In is larger than the atomic proportion of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) in the first oxide semiconductor film, and the atomic proportion of In in the second oxide semiconductor film is smaller than that in the first oxide semiconductor film.

Abstract translation: 减少具有包括氧化物半导体的晶体管的半导体器件中的寄生电容。 晶体管包括第一栅极电极，第一栅电极上的第一栅极绝缘膜，第一栅极绝缘膜上的氧化物半导体膜，以及电连接到氧化物半导体膜的源极和漏极。 氧化物半导体膜包括第一栅电极侧的第一氧化物半导体膜和第一氧化物半导体膜上的第二氧化物半导体膜。 In的原子比例大于第一氧化物半导体膜中的M（M为Ti，Ga，Sn，Y，Zr，La，Ce，Nd或Hf）的原子比例，并且In的原子比例 第二氧化物半导体膜比第一氧化物半导体膜小。

公开(公告)号：US20160195983A1

公开(公告)日：2016-07-07

申请号：US14882854

申请日：2015-10-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE

IPC: G06F3/041 ,  G06F3/044

CPC classification number: G06F3/0416 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04112

Abstract: A touch panel with higher sensing accuracy or higher detection sensitivity is provided. The touch panel includes a first conductive layer, a second conductive layer, a plurality of display elements, and a scan line. In a plan view, the first conductive layer has an outline including a first portion that is linear and parallel to a first direction. In the plan view, the second conductive layer has an outline including a second portion that is linear and parallel to the first direction. The first portion and the second portion face each other. The display element is in a position not overlapping with the first conductive layer nor the second conductive layer. The scan line has a portion extending in a second direction. An angle between the first direction and the second direction is greater than or equal to 30° and less than or equal to 60°.

Abstract translation: 提供了具有更高感测精度或更高检测灵敏度的触摸面板。 触摸面板包括第一导电层，第二导电层，多个显示元件和扫描线。 在平面图中，第一导电层具有包括线性并且平行于第一方向的第一部分的轮廓。 在平面图中，第二导电层具有包括线性并且平行于第一方向的第二部分的轮廓。 第一部分和第二部分彼此面对。 显示元件处于不与第一导电层或第二导电层重叠的位置。 扫描线具有沿第二方向延伸的部分。 第一方向和第二方向之间的角度大于或等于30°且小于或等于60°。

公开(公告)号：US20160093263A1

公开(公告)日：2016-03-31

申请号：US14862531

申请日：2015-09-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Hiroyuki MIYAKE

IPC: G09G3/36

CPC classification number: G09G3/3291 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2310/0297 ,  G09G2320/0233 ,  G09G2320/0238 ,  G09G2320/029 ,  G09G2320/045

Abstract: To provide a display device which can perform external correction in parallel with display operation. The display device includes a plurality of pixels arranged in a matrix and a plurality of reading circuits provided outside the pixels. Each of the pixels includes a light-emitting element and a transistor which supplies current to the light-emitting element. In the display device, in a blanking period of the display device, a row in which all the pixels are displayed in black is selected so that a reading signal is input thereto; data on current characteristics of the transistors included in the pixels in the selected row is read out, and at the same time, display is performed in pixels in rows other than the selected row; and a signal for black display is input in the selected row so that the pixels in the row are displayed in black.

Abstract translation: 提供能够与显示操作并行地进行外部校正的显示装置。 显示装置包括排列成矩阵的多个像素和设置在像素外部的多个读取电路。 每个像素包括发光元件和向发光元件提供电流的晶体管。 在显示装置中，在显示装置的消隐期间，选择所有像素以黑色显示的行，以便向其输入读取信号; 读取包含在所选行中的像素中的晶体管的电流特性的数据，并且同时以除所选行以外的行以像素为单位进行显示; 并且在所选行中输入用于黑色显示的信号，使得行中的像素以黑色显示。

公开(公告)号：US20150325215A1

公开(公告)日：2015-11-12

申请号：US14803467

申请日：2015-07-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE ,  Shunpei YAMAZAKI

IPC: G09G5/18 ,  G09G3/36

CPC classification number: G09G5/18 ,  G02F1/13624 ,  G02F1/136286 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  G09G3/006 ,  G09G3/3413 ,  G09G3/3426 ,  G09G3/3648 ,  G09G3/3674 ,  G09G3/3696 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2310/0235 ,  G09G2310/0286

Abstract: To increase the frequency of input of image signals in terms of design in a field-sequential liquid crystal display device. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion of the liquid crystal display device. Thus, the frequency of input of an image signal to each pixel can be increased without change in response speed of a transistor or the like included in the liquid crystal display device.

Abstract translation: 在现场顺序液晶显示装置的设计方面增加图像信号的输入频率。 图像信号同时提供给在液晶显示装置的像素部分中以矩阵排列的像素中提供的多行中的像素。 因此，可以在不改变包括在液晶显示装置中的晶体管等的响应速度的情况下增加对每个像素的图像信号的输入频率。

公开(公告)号：US20150317014A1

公开(公告)日：2015-11-05

申请号：US14699728

申请日：2015-04-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Takashi HAMOCHI

IPC: G06F3/047 ,  G09G5/00 ,  G06F3/044

CPC classification number: G06F3/044 ,  G06F3/047 ,  G06F2203/04102 ,  G06F2203/04103 ,  G09G5/003 ,  G09G2300/04

Abstract: A wiring is inhibited from being visible. Alternatively, a display device or a touch panel with high viewability is provided. A semiconductor device includes a transistor and a wiring electrically connected to the transistor that are over a light-transmitting substrate. Furthermore, a layer including an oxide semiconductor is provided closer to a substrate side than the wiring is so as to overlap with the wiring and serve as an anti-reflection layer that suppress light reflection at the wiring.

Abstract translation: 禁止接线可见。 或者，提供具有高可视性的显示装置或触摸面板。 半导体器件包括晶体管和电连接到透镜衬底上的晶体管的布线。 此外，包括氧化物半导体的层被设置为比布线更靠近基板侧以与布线重叠，并且用作抑制布线处的光反射的抗反射层。

公开(公告)号：US20150261333A1

公开(公告)日：2015-09-17

申请号：US14644814

申请日：2015-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Makoto KANEYASU ,  Kazunori WATANABE ,  Hiroyuki MIYAKE

IPC: G06F3/041

CPC classification number: G06F3/041 ,  G06F3/0412 ,  G06F2203/04102

Abstract: To provide a touch panel in which a decrease in display quality is suppressed. The touch panel includes a touch sensor and a display element. The touch sensor includes a transistor and a sensor element. The transistor is electrically connected to the sensor element. The sensor element includes a pair of electrodes and a dielectric layer. The dielectric layer is positioned between the pair of electrodes. One of the pair of electrodes is an island-shaped electrode. The display element can display an image toward the touch sensor side. The island-shaped electrode does not overlap with a display region of the display element.

Abstract translation: 提供抑制显示质量降低的触摸面板。 触摸面板包括触摸传感器和显示元件。 触摸传感器包括晶体管和传感器元件。 晶体管电连接到传感器元件。 传感器元件包括一对电极和介电层。 电介质层位于一对电极之间。 一对电极中的一个是岛状电极。 显示元件可以朝向触摸传感器侧显示图像。 岛形电极不与显示元件的显示区域重叠。