公开(公告)号：US10100425B2

公开(公告)日：2018-10-16

申请号：US14930170

申请日：2015-11-02

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  James S. Speck

IPC: C30B1/10 ,  C30B7/10 ,  C30B25/02 ,  C30B29/40 ,  C30B7/00 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/34 ,  H01L29/36

Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.