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公开(公告)号：US12224172B2
公开(公告)日：2025-02-11
申请号：US18072684
申请日：2022-11-30
Applicant: SLT Technologies, Inc.
Inventor： Mark P. D'Evelyn , Keiji Fukutomi , Drew W. Cardwell , David N. Italiano , Chiaki Domoto
Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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2.发明授权公开(公告)号：US11466384B2
公开(公告)日：2022-10-11
申请号：US16736274
申请日：2020-01-07
Applicant: SLT Technologies, Inc
Inventor： Mark P. D'Evelyn , Derrick S. Kamber
Abstract: A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.
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公开(公告)号：US20220136128A1
公开(公告)日：2022-05-05
申请号：US17514656
申请日：2021-10-29
Applicant: SLT Technologies, Inc
Inventor： Mark P. D'EVELYN , Paul M. VON DOLLEN , Lisa M. GAY , Douglas W. POCIUS , Jonathan D. COOK
Abstract: A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel.
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公开(公告)号：US20210222317A1
公开(公告)日：2021-07-22
申请号：US17133002
申请日：2020-12-23
Applicant: SLT Technologies, Inc
Inventor： Mark P. D'EVELYN , Drew W. CARDWELL , Jonathan D. COOK
Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
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公开(公告)号：US20200283892A1
公开(公告)日：2020-09-10
申请号：US16814813
申请日：2020-03-10
Applicant: SLT Technologies, Inc
Inventor： Douglas W. POCIUS , Derrick S. KAMBER , Mark P. D'EVELYN , Jonathan D. COOK
Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.
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Patent Agency Ranking
公开(公告)号：US10293318B2
公开(公告)日：2019-05-21
申请号：US15269538
申请日：2016-09-19
Applicant: SLT TECHNOLOGIES, INC.
Inventor： Mark Philip D'Evelyn , Rajeev Tirumala Pakalapati
Abstract: A pressure release mechanism for use with a capsule for processing materials or growing crystals in supercritical fluids is disclosed. The capsule with the pressure release mechanism is scalable up to very large volumes and is cost effective according to a preferred embodiment. In conjunction with suitable high pressure apparatus, the capsule with pressure release mechanism is capable of processing materials at pressures and temperatures of 20-2000 MPa and 25-1500° C., respectively. Of course, there can be other variations, modifications, and alternatives.
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公开(公告)号：US10087550B2
公开(公告)日：2018-10-02
申请号：US15596728
申请日：2017-05-16
Applicant: SLT TECHNOLOGIES, INC.
Inventor： Mark P. D'Evelyn , Michael Ragan Krames
IPC: B32B3/02 , C30B25/18 , H01L29/20 , H01L29/04 , H01L29/36 , H01L21/78 , H01L31/00 , H01L33/32 , C30B23/02 , C30B29/40 , H01L21/02 , H01L31/0304 , H01L31/18 , H01L33/00 , H01S5/30
Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.
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公开(公告)号：US12252812B2
公开(公告)日：2025-03-18
申请号：US18434568
申请日：2024-02-06
Applicant: SLT Technologies, Inc.
Inventor： Mark P. D'Evelyn , Paul M. Von Dollen , Lisa M. Gay , Douglas W. Pocius , Jonathan D. Cook
Abstract: A method for growth of group III metal nitride crystals includes providing one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process.
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9.发明授权公开(公告)号：US12168632B2
公开(公告)日：2024-12-17
申请号：US17963910
申请日：2022-10-11
Applicant: SLT Technologies, Inc.
Inventor： Mark P. D'Evelyn , David N. Italiano
IPC: C04B35/581 , C04B35/626 , C04B35/645 , C04B35/65 , C09K11/02 , C09K11/77 , B28B1/30 , B28B3/02
Abstract: Embodiments of disclosure may provide a method for forming an aluminum-containing nitride ceramic matrix composite, comprising heating a green body, an aluminum-containing composition, ammonia and a mineralizer composition in a sealable container to a temperature between about 400 degrees Celsius and about 800 degrees Celsius and a pressure between about 10 MPa and about 1000 MPa, to form an aluminum-containing nitride ceramic matrix composite characterized by a phosphor-to-aluminum nitride (AlN) ratio, by volume, between about 1% and about 99%, by a porosity between about 1% and about 50%, and by a thermal conductivity between about 1 watt per meter-Kelvin and about 320 watts per meter-Kelvin. The green body comprises a phosphor powder comprising at least one phosphor composition, wherein the phosphor powder particles are characterized by a D50 diameter between about 100 nanometers and about 500 micrometers, and the green body has a porosity between about 10% and about 80%. The aluminum-containing composition has a purity, on a metals basis, between about 90% and about 99.9999%. The fraction of free volume within the sealable container contains between about 10% and about 95% of liquid ammonia prior to heating the green body, the aluminum-containing composition, ammonia and the mineralizer composition in the sealable container.
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公开(公告)号：US12027635B2
公开(公告)日：2024-07-02
申请号：US18059307
申请日：2022-11-28
Applicant: SLT Technologies, Inc.
Inventor： Drew W. Cardwell , Mark P. D'Evelyn
IPC: H01L31/0232 , G01J1/04 , G01J1/44 , H01L31/109
CPC classification number: H01L31/02327 , G01J1/0425 , G01J1/44 , H01L31/109 , G01J2001/4466
Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
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