公开(公告)号：US11453956B2

公开(公告)日：2022-09-27

申请号：US16550947

申请日：2019-08-26

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B33/06 ,  C30B7/10 ,  H01L21/02 ,  H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B19/06 ,  C30B19/12

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

公开(公告)号：US10100425B2

公开(公告)日：2018-10-16

申请号：US14930170

申请日：2015-11-02

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  James S. Speck

IPC: C30B1/10 ,  C30B7/10 ,  C30B25/02 ,  C30B29/40 ,  C30B7/00 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/34 ,  H01L29/36

Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.