公开(公告)号：US11876015B2

公开(公告)日：2024-01-16

申请号：US17435631

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Franck Colas

IPC: H01L21/762 ,  H01L21/78 ,  H01L21/304

CPC classification number: H01L21/76254 ,  H01L21/3043 ,  H01L21/7806

Abstract: A method for transferring a useful layer to a carrier substrate comprises: joining a front face of a donor substrate to a carrier substrate along a bonding interface to form a bonded structure; annealing the bonded structure to apply a weakening thermal budget thereto and bring a buried weakened plane in the donor substrate to a defined level of weakening, the anneal reaching a maximum hold temperature; and initiating a self-sustained and propagating splitting wave in the buried weakened plane by applying a stress to the bonded structure to lead to the useful layer being transferred to the carrier substrate. The initiation of the splitting wave occurs when the bonded structure experiences a thermal gradient defining a hot region and a cool region of the bonded structure, the stress being applied locally in the cool region, and the hot region experiencing a temperature lower than the maximum hold temperature.

公开(公告)号：US20210202302A1

公开(公告)日：2021-07-01

申请号：US17190004

申请日：2021-03-02

Applicant: Soitec ,  COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frédéric Mazen ,  Damien Massy ,  Shay Reboh ,  François Rieutord

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/263

Abstract: Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

公开(公告)号：US10950491B2

公开(公告)日：2021-03-16

申请号：US16324461

申请日：2017-08-01

Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives ,  Soitec

Inventor： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frederic Mazen ,  Damien Massy ,  Shay Reboh ,  Francois Rieutord

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/263

Abstract: A useful layer is layered onto a support by a method that includes the steps of forming an embrittlement plane by implanting light elements into a first substrate, so as to form a useful layer between such plane and one surface of the first substrate; applying the support onto the surface of the first substrate so as to form an assembly to be fractured; applying a heat treatment for embrittling the assembly to be fractured; and initiating and propagating a fracture wave into the first substrate along the embrittlement plane. The fracture wave is initiated in a central area of the embrittlement plane and the propagation speed of the wave is controlled so that the velocity thereof is sufficient to cause the interactions of the fracture wave with acoustic vibrations emitted upon the initiation and/or propagation thereof, if any, are confined to a peripheral area of the useful layer.

公开(公告)号：US20200328094A1

公开(公告)日：2020-10-15

申请号：US16305695

申请日：2017-05-24

Applicant: Soitec

Inventor： Bich-Yen Nguyen ,  Ludovic Ecarnot ,  Nadia Ben Mohamed ,  Christophe Malville

IPC: H01L21/56 ,  H01L21/48 ,  H01L21/78

Abstract: A method of forming a semiconductor structure includes introducing, at selected conditions, hydrogen and helium species (e.g., ions) in a temporary support to form a plane of weakness at a predetermined depth therein, and to define a superficial layer and a residual part of the temporary support; forming on the temporary support an interconnection layer; placing at least one semiconductor chip on the interconnection layer assembling a stiffener on a back side of the at least one semiconductor chip; and providing thermal energy to the temporary support to detach the residual part and provide the semiconductor structure. The interconnection layer forms an interposer free from any through via.

公开(公告)号：US20160233125A1

公开(公告)日：2016-08-11

申请号：US15018465

申请日：2016-02-08

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/265

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/324

Abstract: A method for transferring a useful layer onto a carrier comprises formation of an embrittlement plane by implantation of light species into a first substrate in such a manner as to define the bounds of a useful layer between this plane and a surface of the first substrate, mounting of the carrier onto the surface of the first substrate so as to form an assembly to be fractured, and thermal fracture treatment of the first substrate along the embrittlement plane in such a manner as to transfer the useful layer onto the support. During the thermal fracture treatment, the degree of peripheral adhesion is reduced at the interface between the carrier and the first substrate.

Abstract translation: 用于将有用层转移到载体上的方法包括通过将光物质注入到第一基底中以限定在该平面和第一基底的表面之间的有用层的界限的方式形成脆化平面，安装 的载体形成在第一基板的表面上，以形成要断裂的组件，以及沿着脆化面热处理第一基板，以将有用层转移到载体上。 在热断裂处理期间，在载体和第一基板之间的界面处，周边粘合度降低。

公开(公告)号：US20150303098A1

公开(公告)日：2015-10-22

申请号：US14686229

申请日：2015-04-14

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Damien Massy ,  Frederic Mazen ,  Francois Rieutord

IPC: H01L21/762 ,  H01L21/683

CPC classification number: H01L21/76254 ,  H01L21/6835 ,  H01L2221/68363 ,  H01L2221/68381

Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

Abstract translation: 用于将有用层转移到载体上的方法包括以下过程：通过将光物质注入到第一基底中形成脆性平面，以便在该平面和第一基底的表面之间形成有用层 ; 将支撑件施加到第一基板的表面上以形成具有两个暴露侧面的要断裂的组件; 热破碎处理组件要断裂; 以及沿着脆化平面在第一衬底中的断裂波的引发和自持续传播。 待破裂的组件的至少一个侧面在接触区域上紧密接触，其中吸收单元适于捕获和消散在断裂波的起始和/或传播期间发射的声振动。