公开(公告)号：US20190140176A1

公开(公告)日：2019-05-09

申请号：US16184246

申请日：2018-11-08

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS

Inventor： Franck ARNAUD ,  David GALPIN ,  Stephane ZOLL ,  Olivier HINSINGER ,  Laurent FAVENNEC ,  Jean-Pierre ODDOU ,  Lucile BROUSSOUS ,  Philippe BOIVIN ,  Olivier WEBER ,  Philippe BRUN ,  Pierre MORIN

IPC: H01L45/00 ,  H01L27/24

Abstract: An electronic chip includes memory cells made of a phase-change material and a transistor. First and second vias extend from the transistor through an intermediate insulating layer to a same height. A first metal level including a first interconnection track in contact with the first via is located over the intermediate insulating layer. A heating element for heating the phase-change material is located on the second via, and the phase-change material is located on the heating element. A second metal level including a second interconnection track is located above the phase-change material. A third via extends from the phase-change material to the second interconnection track.

公开(公告)号：US20170317279A1

公开(公告)日：2017-11-02

申请号：US15352985

申请日：2016-11-16

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Philippe BOIVIN

IPC: H01L45/00

CPC classification number: H01L45/122 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675

Abstract: A oxide-based direct-access resistive nonvolatile memory may include within the interconnect portion of the integrated circuit a memory plane including capacitive memory cells extending in orthogonal first and second directions and each including a first electrode, a dielectric region and a second electrode. The memory plane may include conductive pads of square or rectangular shape forming the first electrodes. The stack of the dielectric layer and the second conductive layer covers the pads in the first direction and forms, in the second direction, conductive bands extending over and between the pads. The second electrodes may be formed by zones of the second bands facing the pads.