公开(公告)号：US09000498B2

公开(公告)日：2015-04-07

申请号：US13931581

申请日：2013-06-28

Applicant: STMicroelectronics, Inc.

Inventor： Pierre Morin

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7849 ,  H01L21/02381 ,  H01L21/02587 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/785

Abstract: An apparatus of a semiconductor is provided wherein the apparatus comprises a substrate, a stack, and a fin. The substrate supports the stack and the substrate comprises a first material. The stack provides for the fin and the stack comprises: a strain induced in the stack via the substrate; the first material and a second material; and a plurality of concentrations of the second material with respect to the first material. The fin provides a source and a drain of a field effect transistor.

Abstract translation: 提供了一种半导体器件，其中该器件包括衬底，堆叠和鳍。 衬底支撑堆叠，衬底包括第一材料。 堆叠提供翅片，堆叠包括：经由衬底在堆叠中感应的应变; 第一种材料和第二种材料; 以及所述第二材料相对于所述第一材料的多个浓度。 鳍片提供场效应晶体管的源极和漏极。

公开(公告)号：US20150076514A1

公开(公告)日：2015-03-19

申请号：US14027758

申请日：2013-09-16

Applicant: STMicroelectronics, Inc.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L27/0924 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/7849 ,  H01L29/785

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US20150001595A1

公开(公告)日：2015-01-01

申请号：US13931581

申请日：2013-06-28

Applicant: STMicroelectronics, Inc.

Inventor： Pierre Morin

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7849 ,  H01L21/02381 ,  H01L21/02587 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/785

Abstract: An apparatus of a semiconductor is provided wherein the apparatus comprises a substrate, a stack, and a fin. The substrate supports the stack and the substrate comprises a first material. The stack provides for the fin and the stack comprises: a strain induced in the stack via the substrate; the first material and a second material; and a plurality of concentrations of the second material with respect to the first material. The fin provides a source and a drain of a field effect transistor.

Abstract translation: 提供了一种半导体器件，其中该器件包括衬底，堆叠和鳍。 衬底支撑堆叠，衬底包括第一材料。 堆叠提供翅片，堆叠包括：经由衬底在堆叠中感应的应变; 第一种材料和第二种材料; 以及所述第二材料相对于所述第一材料的多个浓度。 鳍片提供场效应晶体管的源极和漏极。

公开(公告)号：US11569384B2

公开(公告)日：2023-01-31

申请号：US17074121

申请日：2020-10-19

Applicant: STMICROELECTRONICS, INC.

Inventor： Nicolas Loubet ,  Pierre Morin

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165 ,  H01L29/15 ,  H01L29/16 ,  H01L29/161

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.

公开(公告)号：US10854606B2

公开(公告)日：2020-12-01

申请号：US16697103

申请日：2019-11-26

Applicant: STMICROELECTRONICS, INC.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L27/088 ,  H01L27/092 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US10515965B2

公开(公告)日：2019-12-24

申请号：US16035441

申请日：2018-07-13

Applicant: STMICROELECTRONICS, INC.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L27/088 ,  H01L27/092 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US10256341B2

公开(公告)日：2019-04-09

申请号：US15884843

申请日：2018-01-31

Applicant: STMICROELECTRONICS, INC.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/66 ,  H01L27/088 ,  H01L29/417 ,  H01L29/161 ,  H01L29/10 ,  H01L29/06

Abstract: A self-aligned SiGe FinFET device features a relaxed channel region having a high germanium concentration. Instead of first introducing germanium into the channel and then attempting to relax the resulting strained film, a relaxed channel is formed initially to accept the germanium. In this way, a presence of germanium can be established without straining or damaging the lattice. Gate structures are patterned relative to intrinsic silicon fins, to ensure that the gates are properly aligned, prior to introducing germanium into the fin lattice structure. After aligning the gate structures, the silicon fins are segmented to elastically relax the silicon lattice. Then, germanium is introduced into the relaxed silicon lattice, to produce a SiGe channel that is substantially stress-free and also defect-free. Using the method described, concentration of germanium achieved in a structurally stable film can be increased to a level greater than 85%.

公开(公告)号：US10068908B2

公开(公告)日：2018-09-04

申请号：US15489360

申请日：2017-04-17

Applicant: STMicroelectronics, Inc.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L29/66 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L29/417 ,  H01L29/423

Abstract: Methods and structures for forming a localized, strained region of a substrate are described. Trenches may be formed at boundaries of a localized region of a substrate. An upper portion of sidewalls at the localized region may be covered with a covering layer, and a lower portion of the sidewalls at the localized region may not be covered. A converting material may be formed in contact with the lower portion of the localized region, and the substrate heated. The heating may introduce a chemical species from the converting material into the lower portion, which creates stress in the localized region. The methods may be used to form strained-channel finFETs.

公开(公告)号：US20180026136A1

公开(公告)日：2018-01-25

申请号：US15723152

申请日：2017-10-02

Applicant: STMICROELECTRONICS, INC.

Inventor： Pierre Morin ,  Nicolas Loubet

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L27/0886 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.

公开(公告)号：US09831342B2

公开(公告)日：2017-11-28

申请号：US14975534

申请日：2015-12-18

Applicant: STMicroelectronics, Inc.

Inventor： Nicolas Loubet ,  Pierre Morin

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165 ,  H01L29/15 ,  H01L29/16 ,  H01L29/161

CPC classification number: H01L29/7848 ,  H01L29/1054 ,  H01L29/155 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.