公开(公告)号：US10887536B2

公开(公告)日：2021-01-05

申请号：US16115987

申请日：2018-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook Lim ,  Eun Sub Shim ,  Kyung Ho Lee

IPC: H04N5/225 ,  H04N5/357 ,  H01L27/146 ,  H04N5/355 ,  H04N5/378

Abstract: An image sensor includes a photoelectric conversion unit configured to receive light to generate an electric charge and provide the electric charge to a first node, a transfer transistor configured to provide a voltage level of the first node to a floating diffusion node in response to a first signal, a booster configured to increase a voltage level of the floating diffusion node in response to a second signal, a source follower transistor configured to provide the voltage level of the floating diffusion node to a second node, and a selection transistor configured to provide a voltage level of the second node to a pixel output terminal in response to a third signal. After the selection transistor is turned on, the booster is enabled, and before the transfer transistor is turned on, the booster is disabled.

公开(公告)号：US20200322557A1

公开(公告)日：2020-10-08

申请号：US16568972

申请日：2019-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim

IPC: H04N5/378 ,  H04N5/376

Abstract: An image sensor includes a correlated double sampling (CDS) circuit. The CDS circuit includes a comparator having a first input terminal connected to a first node, a second input terminal, and an output terminal connected to a second node, a multi-sampling pulse generator having an input terminal and at least one output terminal, and a multi-sampling circuit. The multi-sampling circuit includes a correction capacitor disposed between an input terminal of the CDS circuit and the first node, and at least one sampling capacitor disposed between the at least one output terminal of the multi-sampling pulse generator and the first node.

公开(公告)号：US10573676B2

公开(公告)日：2020-02-25

申请号：US15862013

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin Yun ,  Eun Sub Shim ,  Kyung Ho Lee ,  Sung Ho Choi ,  Jung Hoon Park ,  Jung Wook Lim ,  Min Ji Jung

IPC: H04N5/374 ,  H01L27/146 ,  H04N5/378 ,  H04N5/369 ,  H04N5/3745

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.