公开(公告)号：US11024741B2

公开(公告)日：2021-06-01

申请号：US16747870

申请日：2020-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin Song ,  Bongseok Suh ,  Junggil Yang ,  Soojin Jeong

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423

Abstract: An integrated circuit includes a fin active region protruding from a substrate, a plurality of semiconductor patterns on an upper surface of the fin active region, a gate electrode that surrounds the plurality of semiconductor patterns and includes a main gate part on an uppermost one of the plurality of semiconductor patterns and sub gate parts between the plurality of semiconductor patterns, a spacer structure on a sidewall of the main gate part, and a source/drain region at a side of the gate electrode. The source/drain region is connected to the plurality of semiconductor patterns and contacts a bottom surface of the spacer structure. A top portion of the uppermost semiconductor pattern has a first width. A bottom portion of the uppermost semiconductor pattern has a second width smaller than the first width.

公开(公告)号：US09711506B2

公开(公告)日：2017-07-18

申请号：US15249518

申请日：2016-08-29

Applicant: Samsung Electronics Co. Ltd.

Inventor： Junggil Yang ,  Sangsu Kim ,  TaeYong Kwon ,  Sung Gi Hur

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/306 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L27/0924 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0922 ,  H01L29/1054 ,  H01L29/42392

Abstract: A method of fabricating a semiconductor device includes preparing a substrate including a first region and a second region, sequentially forming a first semiconductor layer and a second semiconductor layer on the first and second regions, patterning the first and second semiconductor layers to form a lower semiconductor pattern and an upper semiconductor pattern on each of the first and second regions, selectively removing the lower semiconductor pattern on the second region to form a gap region, and forming gate electrodes at the first and second regions, respectively.