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    Semiconductor device
    31.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12062628B2

    公开(公告)日：2024-08-13

    申请号：US18126996

    申请日：2023-03-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Changbum Kim ,  Sunghoon Kim ,  Daeseok Byeon

    IPC: H01L21/00 ,  H01L23/528 ,  H01L23/60 ,  H01L27/092

    CPC classification number: H01L23/60 ,  H01L23/528 ,  H01L27/092

    Abstract: A semiconductor device includes a gate line extending in a first direction, parallel to an upper surface of a semiconductor substrate; a first active region including a first channel region disposed below the gate line and including a first conductivity-type impurity; a second active region disposed to be separated from the first active region in the first direction, including a second channel region disposed below the gate line, and including the first conductivity-type impurity; and a plurality of metal wirings disposed at a first height level above the semiconductor substrate, wherein at least one metal wiring, among the plurality of metal wirings, is directly electrically connected to the first active region, no metal wirings at the first height level are electrically connected to the second active region, and at least one metal wiring, among the plurality of metal wirings, is connected to receive a signal applied to the gate line.

    Neural network accelerator and operating method thereof
    32.
    发明授权
    Neural network accelerator and operating method thereof 有权

    公开(公告)号：US11960986B2

    公开(公告)日：2024-04-16

    申请号：US17944454

    申请日：2022-09-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seokhyeong Kang ,  Yesung Kang ,  Sunghoon Kim ,  Yoonho Park

    IPC: G06F7/00 ,  G06F9/30 ,  G06F9/50 ,  G06N3/063

    CPC classification number: G06N3/063 ,  G06F9/30145 ,  G06F9/5027

    Abstract: A neural network accelerator includes an operator that calculates a first operation result based on a first tiled input feature map and first tiled filter data, a quantizer that generates a quantization result by quantizing the first operation result based on a second bit width extended compared with a first bit width of the first tiled input feature map, a compressor that generates a partial sum by compressing the quantization result, and a decompressor that generates a second operation result by decompressing the partial sum, the operator calculates a third operation result based on a second tiled input feature map, second tiled filter data, and the second operation result, and an output feature map is generated based on the third operation result.

    Method and apparatus for supporting transfer of mobile edge computing in wireless communication system
    33.
    发明授权
    Method and apparatus for supporting transfer of mobile edge computing in wireless communication system 有权

    公开(公告)号：US11825400B2

    公开(公告)日：2023-11-21

    申请号：US17282874

    申请日：2019-09-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yoonseon Han ,  Sunghoon Kim ,  Hoyeon Lee ,  Kisuk Kweon ,  Jungshin Park ,  Jungje Son

    IPC: H04W40/24

    CPC classification number: H04W40/248

    Abstract: Provided are a method and apparatus for supporting migration of mobile edge computing in a wireless communication system. A method, performed by a Session Management Function (SMF), of controlling a path between an Application function (AF) and a user equipment in a wireless communication system includes: receiving, from the AF, an AF request message including information indicating whether User Plane Function (UPF) modification is allowed; determining whether a modification of a UPF in the path between the AF and the user equipment is required; transmitting a notification including information associated with the modification of a UPF to the AF, based on a result of the determining whether the modification of the UPF is required; determining whether to wait for reception of a response message from the AF for a certain period of time, based on the information indicating whether UPF modification is allowed; and controlling a modification of the path between the AF and the user equipment, the path including the UPF, based on a result of the determining whether to wait.

    Method and apparatus for transmitting and receiving data in wireless communication system
    35.
    发明授权
    Method and apparatus for transmitting and receiving data in wireless communication system 有权

    公开(公告)号：US11729671B2

    公开(公告)日：2023-08-15

    申请号：US17503705

    申请日：2021-10-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kisuk Kweon ,  Sunghoon Kim ,  Jungje Son ,  Hoyeon Lee ,  Yoonseon Han

    IPC: H04W4/00 ,  H04W28/18

    CPC classification number: H04W28/18

    Abstract: A method of performing communication, by a network exposure function (NEF), in a wireless communication system is provided. The method includes receiving a connection establishment request from a session management function (SMF), based on a protocol data unit (PDU) session establishment procedure performed between the SMF and a user equipment (UE), performing a non-internet protocol (IP) data delivery (NIDD) configuration procedure according to NIDD configuration information included in the connection establishment request, based on whether the NIDD configuration procedure is previously performed on the UE between the NEF and an application function (AF), establishing connection between the SMF and the NEF, and transmitting a connection establishment response to the SMF.

    SEMICONDUCTOR DEVICE
    37.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230230941A1

    公开(公告)日：2023-07-20

    申请号：US18126996

    申请日：2023-03-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Changbum Kim ,  Sunghoon Kim ,  Daeseok Byeon

    IPC: H01L23/60 ,  H01L23/528 ,  H01L27/092

    CPC classification number: H01L23/60 ,  H01L23/528 ,  H01L27/092

    Abstract: A semiconductor device includes a gate line extending in a first direction, parallel to an upper surface of a semiconductor substrate; a first active region including a first channel region disposed below the gate line and including a first conductivity-type impurity; a second active region disposed to be separated from the first active region in the first direction, including a second channel region disposed below the gate line, and including the first conductivity-type impurity; and a plurality of metal wirings disposed at a first height level above the semiconductor substrate, wherein at least one metal wiring, among the plurality of metal wirings, is directly electrically connected to the first active region, no metal wirings at the first height level are electrically connected to the second active region, and at least one metal wiring, among the plurality of metal wirings, is connected to receive a signal applied to the gate line.

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