公开(公告)号：US20150065531A1

公开(公告)日：2015-03-05

申请号：US14239294

申请日：2012-08-15

Applicant: James R. Connor ,  Sang Yong Lee ,  Thomas James Brown ,  Phillip Martin Cowley

Inventor： James R. Connor ,  Sang Yong Lee ,  Thomas James Brown ,  Phillip Martin Cowley

IPC: C07D405/06 ,  C07D403/06 ,  C07D401/06 ,  C07D239/60

CPC classification number: C07D405/06 ,  A61K31/513 ,  C07D239/60 ,  C07D401/06 ,  C07D403/06

Abstract: Provided are methods and compositions for use in therapy, and in particular for treating cancer, preferably drug-resistant cancer, and/or radiation resistant cancer. The compounds may be used for reducing tumor size in a mammalian subject and for inducing apoptosis in a tumor cell. The methods are effective on tumor cells that are resistant to drugs such as temozolomide, doxorubicin, and geldanamycin, as well as non-resistant tumor cells. Further provided are barbiturate and thiobarbiturates diene compounds for use in treating cancer, and uses, methods and compositions relating to these compounds.

Abstract translation: 提供了用于治疗，特别是用于治疗癌症，优选耐药性癌症和/或耐辐射癌症的方法和组合物。 所述化合物可用于减少哺乳动物受试者的肿瘤大小并诱导肿瘤细胞凋亡。 该方法对对诸如替莫唑胺，多柔比星和格尔德霉素的药物以及非抗性肿瘤细胞具有抗药性的肿瘤细胞是有效的。 还提供了用于治疗癌症的巴比妥酸盐和硫代巴比妥酸盐二烯化合物，以及与这些化合物有关的用途，方法和组合物。

公开(公告)号：US20140285665A1

公开(公告)日：2014-09-25

申请号：US14350245

申请日：2011-11-21

Applicant: Sang Yong Lee ,  Dae Seung Kim

Inventor： Sang Yong Lee ,  Dae Seung Kim

IPC: G08G1/16 ,  H04N7/18

CPC classification number: G08G1/168 ,  B60R1/00 ,  B60R2300/305 ,  B60R2300/806 ,  B62D15/0295 ,  H04N7/181

Abstract: The present invention relates to an apparatus and method for assisting parking, the apparatus including: an image sensor photographing front/rear view images of a vehicle; and an estimated trace of vehicle generation and process unit generating an estimated trace of the vehicle to a parking target area using steering angle information of the vehicle, and overlaying the estimated trace of the vehicle to the photographed front/rear view images of the vehicle, wherein the estimated trace of the vehicle includes a first estimated trace of the vehicle based on a rear wheel of the vehicle and a second estimated trace of the vehicle based on a front wheel of the vehicle.

Abstract translation: 本发明涉及一种辅助停车的装置和方法，该装置包括：拍摄车辆前/后视图的图像传感器; 以及车辆生成和处理单元的估计轨迹，使用车辆的转向角信息将车辆的估计轨迹生成到停车目标区域，并且将估计的车辆轨迹与车辆的拍摄的前/后视图重叠， 其中所述车辆的估计轨迹包括基于所述车辆的后轮的所述车辆的第一估计轨迹和基于所述车辆的前轮的所述车辆的第二估计轨迹。

公开(公告)号：US08661634B2

公开(公告)日：2014-03-04

申请号：US12730907

申请日：2010-03-24

Applicant: Keon Jae Lee ,  Suk Joong L. Kang ,  Jaemyung Chang ,  Kwi-il Park ,  Seungjun Kim ,  Sang Yong Lee

Inventor： Keon Jae Lee ,  Suk Joong L. Kang ,  Jaemyung Chang ,  Kwi-il Park ,  Seungjun Kim ,  Sang Yong Lee

IPC: H01L41/22 ,  H01L41/053

CPC classification number: H01L27/20 ,  H01L41/1871 ,  H01L41/257 ,  H01L41/312 ,  H01L41/318

Abstract: A method of manufacturing a flexible piezoelectric device including laminating a first metal layer on a silicon oxide layer on a silicon substrate. The method further includes laminating a device on the first metal layer and annealing the first metal layer to oxidize the first metal into a first metal oxide. The method further includes etching the first metal oxide to separate the device from the silicon oxide layer and transferring the separated device to a flexible substrate using a transfer layer. The metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate. As a result, physical damage of the silicon substrate is prevented and a cost of using expensive single-crystal silicon substrate is reduced.

Abstract translation: 一种制造柔性压电器件的方法，包括在硅衬底上的氧化硅层上层叠第一金属层。 该方法还包括在第一金属层上层叠器件并退火第一金属层以将第一金属氧化成第一金属氧化物。 该方法还包括蚀刻第一金属氧化物以将器件与氧化硅层分离，并使用转移层将分离的器件转移到柔性衬底。 蚀刻层叠在硅衬底上的金属氧化物层，以使器件与衬底分离。 结果，防止了硅衬底的物理损坏，并且降低了使用昂贵的单晶硅衬底的成本。

公开(公告)号：US20130255461A1

公开(公告)日：2013-10-03

申请号：US13993615

申请日：2011-11-14

Applicant: Sun Choel Yang ,  Ki Soo Chang ,  Geon Hee Kim ,  Myeong Sang Kim ,  Sang Yong Lee

Inventor： Sun Choel Yang ,  Ki Soo Chang ,  Geon Hee Kim ,  Myeong Sang Kim ,  Sang Yong Lee

IPC: B23Q3/06 ,  B26D7/01

CPC classification number: B23Q3/065 ,  B23B31/021 ,  B23B2215/64 ,  B23B2240/21 ,  B23Q3/062 ,  B26D7/01 ,  Y10T83/7487

Abstract: The present invention relates to a jig for processing the inner surface of an aluminum alloy Winston cone baffle having the thickness of a sheet through an ultra-precision machining, the jig having a shape identically corresponding to the outer shape of a Winston cone baffle having a can body shape made up of compound parabolic, and divided into an upper plate jig and a lower plate jig in formation, wherein the upper plate jig is divided in two, a left side jig and a right side jig, which are formed to correspond in shape and size so as to enable isolation or coupling to/from each other, and the inner surface of the Winston cone baffle attached inside the upper plate jig is made to enable ultra-precision machining at the cutting speed of 220 m/min-300 m/min, which enables the inner surface of the Winston cone baffle to process a slickenside having approximately 4 nm of surface roughness, and in particular, ultra-precision machining at surface roughness of Ra=2.32 nm in a processing condition of cutting speed at 260 m/min, cutting depth at 4 micrometer, and feeding speed at 1 mm/min, thereby enabling formation of a Winston cone baffle through low-cost ultra-precision machining.

Abstract translation: 本发明涉及一种用于通过超精密机械加工具有片材厚度的铝合金温斯顿锥形挡板的内表面的夹具，该夹具具有与温斯顿锥形挡板的外形相同的形状，其具有 罐身体形状由复合抛物线构成，分为上板夹具和下板夹具，其中上板夹具分成两部分，左侧夹具和右侧夹具，其形成为对应于 形状和尺寸，以便彼此隔离或相互连接，并且连接在上板夹具内部的温斯顿锥形挡板的内表面被制成使得能够以220m / min-300的切割速度进行超精密加工 m / min，这使得温斯顿锥形挡板的内表面能够处理具有大约4nm的表面粗糙度的光滑面，特别是在处理锥中Ra = 2.32nm处的表面粗糙度的超精密加工 切割速度为260米/分钟，切割深度为4微米，进给速度为1mm / min，从而通过低成本超精密加工形成了温斯顿锥形挡板。

公开(公告)号：US08411163B2

公开(公告)日：2013-04-02

申请号：US12948415

申请日：2010-11-17

Applicant: Sang Yong Lee

Inventor： Sang Yong Lee

IPC: H04N5/235 ,  H04N3/14 ,  H04N5/335 ,  G05B13/02

CPC classification number: G03B7/006

Abstract: An automatic exposure (AE) controlling device and method are provided. According to the method, an electric shutter (ES) value and an analog gain control (AGC) value can be calculated through a proportional integral control method according to a brightness value of an inputted image frame. Then, AE compensation on a present image frame can be performed using the calculated ES value and AGC value.

Abstract translation: 提供自动曝光（AE）控制装置和方法。 根据该方法，可以通过比例积分控制方法根据输入图像帧的亮度值来计算电动快门（ES）值和模拟增益控制（AGC）值。 然后，可以使用计算的ES值和AGC值来执行当前图像帧的AE补偿。

公开(公告)号：US07999285B2

公开(公告)日：2011-08-16

申请号：US12199966

申请日：2008-08-28

Applicant: Sang Yong Lee

Inventor： Sang Yong Lee

IPC: H01L21/331

CPC classification number: H01L29/7394 ,  H01L29/66325

Abstract: An insulated gate bipolar transistor according to an embodiment includes a first conductive type collector ion implantation area in a substrate; a second conductive type buffer layer, including a first segment buffer layer and a second segment buffer layer, on the first conductive collector ion implantation area; a first conductive type base area on the second conductive type buffer layer; a gate on the substrate at a side of the first conductive type base area; a second conductive type emitter ion implantation area in the first conductive type base area; an insulating layer on the gate; an emitter electrode electrically connected to the second conductive type emitter ion implantation area; and a collector electrode electrically connected to the first conductive collector ion implantation area. The first segment buffer layer can be aligned below a portion of the base area and can have a lower density of second conductive type ions than that of the second segment buffer layer adjacent the first segment buffer layer.

Abstract translation: 根据实施例的绝缘栅双极晶体管包括在衬底中的第一导电类型集电极离子注入区; 在所述第一导电集电极离子注入区上的第二导电型缓冲层，包括第一段缓冲层和第二段缓冲层; 第二导电型缓冲层上的第一导电类型基区; 位于第一导电型基底区一侧的基板上的栅极; 在第一导电类型基区中的第二导电型发射体离子注入区; 栅极上的绝缘层; 电连接到第二导电型发射体离子注入区的发射极; 以及电连接到第一导电集电体离子注入区的集电极。 第一段缓冲层可以在底部区域的一部分下方对准，并且可以具有比与第一段缓冲层相邻的第二段缓冲层的密度更低的第二导电类型离子的密度。

公开(公告)号：US20110057211A1

公开(公告)日：2011-03-10

申请号：US12852463

申请日：2010-08-07

Applicant: Keon Jae Lee ,  Sang Yong Lee ,  Seung Jun Kim

Inventor： Keon Jae Lee ,  Sang Yong Lee ,  Seung Jun Kim

IPC: H01L33/08 ,  H01L33/00

CPC classification number: H01L21/00 ,  H01L27/153 ,  H01L33/0079

Abstract: A method of manufacturing LED display is provided. The method provides a sacrificial substrate on which RGB LED device layers are formed, respectively. The method etches and patterns the LED device layer to manufacture RGB LED devices, respectively. The method removes the sacrificial substrate in a lower side of the LED device. The method contacts a stamping processor to the RGB LED devices to separate the RGB LED devices from the sacrificial substrate. The method transfers the LED device, which is attached to the stamping processor, to a receiving substrate.

Abstract translation: 提供了一种制造LED显示器的方法。 该方法分别提供形成RGB LED器件层的牺牲基板。 该方法分别对LED器件层进行蚀刻和图案分别制造RGB LED器件。 该方法移除LED器件下侧的牺牲衬底。 该方法将冲压处理器与RGB LED器件接触，以将RGB LED器件与牺牲衬底分离。 该方法将附接到冲压处理器的LED装置传送到接收基板。

公开(公告)号：US07884916B2

公开(公告)日：2011-02-08

申请号：US12574156

申请日：2009-10-06

Applicant: Young Seok Choi ,  Yu Ho Jung ,  Sang Yong Lee

Inventor： Young Seok Choi ,  Yu Ho Jung ,  Sang Yong Lee

IPC: G02F1/1339

CPC classification number: G02F1/13394 ,  G02F1/133371 ,  G02F1/134363 ,  G02F1/136286

Abstract: A liquid crystal display device includes first and second substrates facing each other; gate lines and data lines formed on the first substrate such that the gate lines and the data lines intersect each other to define pixel regions; thin film transistors formed at respective intersections of the gate lines and the data lines; a black matrix layer formed on the second substrate such that the black matrix layer corresponds to a region other than the pixel regions; color filter layers extending in an extension direction of the data lines in respective pixel regions; a liquid crystal layer interposed between the first and second substrates; first column spacers formed on one of the first and second substrates such that each first column spacer corresponds to an associated one of the gate lines or to a channel region of an associated one of the thin film transistors to maintain a cell gap between the first and second substrate; and spacer patterns formed on one of the first and second substrates such that each spacer pattern corresponds to at least one of an associated one of the gate lines and an associated one of the data lines, thereby forming a first gap between the spacer pattern and the other substrate facing the spacer pattern, and reducing an amount of liquid crystals filled between the first and second substrates.

Abstract translation: 液晶显示装置包括彼此面对的第一和第二基板; 栅极线和数据线形成在第一基板上，使得栅极线和数据线彼此相交以限定像素区域; 形成在栅极线和数据线的各交叉处的薄膜晶体管; 形成在所述第二基板上的黑矩阵层，使得所述黑矩阵层对应于除所述像素区域之外的区域; 彩色滤光片层，沿各个像素区域中的数据线的延伸方向延伸; 介于所述第一和第二基板之间的液晶层; 第一列间隔物形成在第一和第二基板中的一个上，使得每个第一列间隔物对应于相关联的一条栅极线或相关联的一个薄膜晶体管的沟道区域，以保持第一和第二基板之间的单元间隙 第二基板; 以及形成在所述第一和第二基板中的一个上的间隔图案，使得每个间隔图案对应于相关联的一条栅极线和相关联的一条数据线中的至少一个，从而在间隔物图案与第二基板之间形成第一间隙 面对间隔图案的其它基板，以及减少填充在第一和第二基板之间的液晶的量。

公开(公告)号：US20110000060A1

公开(公告)日：2011-01-06

申请号：US12730907

申请日：2010-03-24

Applicant: Keon Jae Lee ,  Suk Joong L. Kang ,  Jaemyung Chang ,  Kwi-il PARK ,  Seungjun Kim ,  Sang Yong Lee

Inventor： Keon Jae Lee ,  Suk Joong L. Kang ,  Jaemyung Chang ,  Kwi-il PARK ,  Seungjun Kim ,  Sang Yong Lee

IPC: H01L41/22

CPC classification number: H01L27/20 ,  H01L41/1871 ,  H01L41/257 ,  H01L41/312 ,  H01L41/318

Abstract: Provided are a method for manufacturing a flexible device, a flexible device, a flexible piezoelectric device and a flexible capacitor manufactured by the same, and a method for manufacturing a flexible sensor. A method for manufacturing a flexible device includes: laminating a first metal layer on a silicon oxide layer on a silicon substrate; laminating a device on the first metal layer; annealing the first metal layer to oxidize the first metal into a first metal oxide; etching the first metal oxide so as to separate the device from the silicon oxide layer; and transferring the separated device to a flexible substrate using a transfer layer. According to the disclosed method for manufacturing a flexible device, differently from the prior art where the silicon substrate itself is etched, the metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate. As a result, physical damage of the silicon substrate may be prevented and the cost of using the expensive single-crystal silicon substrate may be reduced.

Abstract translation: 提供一种柔性器件的制造方法，柔性器件，柔性压电器件和由其制造的柔性电容器以及柔性传感器的制造方法。 柔性器件的制造方法包括：在硅衬底上的氧化硅层上层叠第一金属层; 在第一金属层上层压器件; 退火所述第一金属层以将所述第一金属氧化成第一金属氧化物; 蚀刻第一金属氧化物以将器件与氧化硅层分离; 以及使用转移层将分离的装置转移到柔性基板。 根据所公开的用于制造柔性器件的方法，不同于蚀刻硅衬底本身的现有技术，蚀刻层叠在硅衬底上的金属氧化物层以将器件与衬底分离。 结果，可以防止硅衬底的物理损坏，并且可能降低使用昂贵的单晶硅衬底的成本。

公开(公告)号：US07704817B2

公开(公告)日：2010-04-27

申请号：US11567091

申请日：2006-12-05

Applicant: Sang Yong Lee

Inventor： Sang Yong Lee

IPC: H01L21/8236

CPC classification number: H01L21/823418 ,  H01L21/76801 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/823475

Abstract: Embodiments relate to a semiconductor device and a method of manufacturing the same. According to embodiments, a semiconductor device may include a gate insulating layer and a gate electrode formed on a semiconductor substrate with an isolation layer, a low-density junction region formed at both sides of the gate electrode, a patterned insulating layer formed while exposing a portion of the low-density junction region, and a high-density junction region formed beneath the exposed low-density junction region of the semiconductor substrate.

Abstract translation: 实施例涉及一种半导体器件及其制造方法。 根据实施例，半导体器件可以包括栅极绝缘层和形成在具有隔离层的半导体衬底上的栅极电极，形成在栅电极两侧的低密度结区域，同时曝光 低密度结区的一部分，以及形成在半导体衬底的暴露的低密度结区下方的高密度结区。