公开(公告)号：US09583336B1

公开(公告)日：2017-02-28

申请号：US15047592

申请日：2016-02-18

Applicant: Texas Instruments Incorporated

Inventor： Bhaskar Srinivasan ,  Asad Mahmood Haider ,  Brian E. Goodlin ,  Haowen Bu ,  Roger Charles McDermott

IPC: H01L35/34 ,  H01L31/18 ,  H01L21/02 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/02271 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45557 ,  C23C16/46 ,  H01L21/02197 ,  H01L21/67248 ,  H01L21/68742

Abstract: A microelectronic device with a ferroelectric layer is formed using an MOCVD tool. A substrate is disposed on a susceptor heated to 600° C. to 650° C. A first carrier gas is flowed into a manifold to combine with a plurality of metal organic precursors. The first carrier gas, the metal organic precursors, and a second carrier gas, are flowed through a vaporizer into a chamber of the MOCVD tool, over the substrate. A ratio of a flow rate of the first carrier gas to a flow rate of the metal organic precursors is 250 sccm/milliliter/minute to 500 sccm/milliliter/minute. A ratio of a flow rate of the second carrier gas to a flow rate of the metal organic precursors is 700 sccm/milliliter/minute to 1500 sccm/milliliter/minute. An oxidizing gas is flowed into the chamber over the substrate. The metal organic precursors and the oxidizing gas react to form the ferroelectric layer.

Abstract translation: 使用MOCVD工具形成具有铁电层的微电子器件。 将衬底设置在加热至600℃至650℃的基座上。第一载气流入歧管以与多个金属有机前体结合。 第一载气，金属有机前体和第二载气在衬底上流过气化器进入MOCVD工具的腔室。 第一载气的流量与金属有机前体的流量的比率为250sccm /毫升/分钟至500sccm /毫升/分钟。 第二载气的流量与金属有机前驱体的流量的比率为700sccm /毫升/分钟至1500sccm /毫升/分钟。 氧化气体在衬底上流入腔室。 金属有机前体和氧化气体反应形成铁电层。

公开(公告)号：US20140225226A1

公开(公告)日：2014-08-14

申请号：US14169120

申请日：2014-01-30

Applicant: Texas Instruments Incorporated

Inventor： Bhaskar Srinivasan ,  Brian E. Goodlin ,  Haowen Bu ,  Mark Visokay

IPC: H01L49/02 ,  H01L21/02

CPC classification number: H01L21/02112 ,  C23C16/409 ,  C23C18/1216 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02263 ,  H01L28/56

Abstract: Multi-step deposition of lead-zirconium-titanate (PZT) ferroelectric material. An initial portion of the PZT material is deposited by metalorganic chemical vapor deposition (MOCVD) at a low deposition rate, for example at a temperature below about 640 deg C. from vaporized liquid precursors of lead, zirconium, and titanium, and a solvent at a collective flow rate below about 1.1 ml/min, in combination with an oxidizing gas. Following deposition of the PZT material at the low flow rate, the remainder of the PZT film is deposited at a high deposition rate, attained by changing one or more of precursor and solvent flow rate, oxygen concentration in the oxidizing gas, A/B ratio of the precursors, temperature, and the like.

Abstract translation: 钛酸锆（PZT）铁电材料的多步沉积。 PZT材料的初始部分通过金属有机化学气相沉积（MOCVD）以低沉积速率沉积，例如在低于约640℃的温度下从铅，锆和钛的汽化液体前体和溶剂中沉积 与约1.1ml / min的组合流速与氧化气体组合。 在PZT材料以低流速沉积之后，PZT膜的其余部分以高沉积速率沉积，通过改变前体和溶剂流速，氧化气体中的氧浓度，A / B比 的前体，温度等。