公开(公告)号：US20240155857A1

公开(公告)日：2024-05-09

申请号：US18395469

申请日：2023-12-22

申请人： SN DISPLAY CO., LTD.

发明人： Tae-Woo LEE ,  Sanghyuk IM ,  Himchan CHO ,  Young-Hoon KIM

IPC分类号： H10K50/11 ,  C09D127/18 ,  C09K11/00 ,  C09K11/02 ,  C09K11/06 ,  C09K11/66 ,  H01B1/12 ,  H01G9/20 ,  H01L21/02 ,  H01L31/0264 ,  H01L31/0352 ,  H01L31/18 ,  H10K30/40 ,  H10K30/50 ,  H10K30/86 ,  H10K50/18 ,  H10K71/00 ,  H10K85/10 ,  H10K85/30 ,  H10K85/50

CPC分类号： H10K50/11 ,  C09D127/18 ,  C09K11/00 ,  C09K11/025 ,  C09K11/06 ,  C09K11/664 ,  C09K11/665 ,  H01B1/125 ,  H01B1/127 ,  H01G9/2009 ,  H01L21/02197 ,  H01L31/0264 ,  H01L31/035218 ,  H01L31/18 ,  H10K30/40 ,  H10K30/50 ,  H10K30/86 ,  H10K50/18 ,  H10K71/00 ,  H10K85/111 ,  H10K85/141 ,  H10K85/30 ,  H10K85/50 ,  C09K2211/188 ,  H10K85/60 ,  Y02E10/549

摘要： Provided are a perovskite optoelectronic device containing an exciton buffer layer, and a method for manufacturing the same. The optoelectronic device of the present inventive concept comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a photoactive layer disposed on the exciton buffer layer and containing a perovskite photoactive layer; and a second electrode disposed on the photoactive layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle photoactive layer. The present inventive concept can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.

公开(公告)号：US20230420022A1

公开(公告)日：2023-12-28

申请号：US17243451

申请日：2021-04-28

申请人： Kepler Computing Inc.

发明人： Sasikanth Manipatruni ,  Rajeev Kumar Dokania ,  Ramamoorthy Ramesh

IPC分类号： G11C11/22 ,  H01L49/02 ,  H01L27/11502 ,  H01L27/11507 ,  H01L21/02

CPC分类号： G11C11/221 ,  H01L28/75 ,  H01L27/11502 ,  H01L28/55 ,  G11C11/2255 ,  G11C11/2257 ,  H01L27/11507 ,  H01L28/90 ,  H01L21/02197 ,  G11C11/225

摘要： Described is a low power, high-density non-volatile differential memory bit-cell. The transistors of the differential memory bit-cell can be planar or non-planer and can be fabricated in the frontend or backend of a die. A bit-cell of the non-volatile differential memory bit-cell comprises first transistor first non-volatile structure that are controlled to store data of a first value. Another bit-cell of the non-volatile differential memory bit-cell comprises second transistor and second non-volatile structure that are controlled to store data of a second value, wherein the first value is an inverse of the second value. The first and second volatile structures comprise ferroelectric material (e.g., perovskite, hexagonal ferroelectric, improper ferroelectric).

公开(公告)号：US11773480B2

公开(公告)日：2023-10-03

申请号：US16756337

申请日：2018-10-09

申请人： Drexel University

发明人： Zongquan Gu ,  Babak Anasori ,  Andrew Lewis Bennett-Jackson ,  Matthias Falmbigl ,  Dominic Imbrenda ,  Yury Gogotsi ,  Jonathan E. Spanier

IPC分类号： C23C14/58 ,  C23C16/455 ,  C23C16/56 ,  C04B35/468 ,  H01L21/02 ,  C23C14/08 ,  C23C14/02 ,  C23C14/06 ,  C23C16/02 ,  C23C16/32 ,  C23C16/40 ,  H01L49/02

CPC分类号： C23C14/088 ,  C04B35/4682 ,  C04B35/4686 ,  C23C14/024 ,  C23C14/0635 ,  C23C14/5806 ,  C23C16/0272 ,  C23C16/32 ,  C23C16/409 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02197 ,  H01L28/55

摘要： The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

公开(公告)号：US11696450B1

公开(公告)日：2023-07-04

申请号：US17516577

申请日：2021-11-01

申请人： Kepler Computing Inc.

发明人： Rajeev Kumar Dokania ,  Noriyuki Sato ,  Tanay Gosavi ,  Amrita Mathuriya ,  Sasikanth Manipatruni

IPC分类号： G11C16/04 ,  H10B53/20 ,  G11C11/22 ,  H01L49/02 ,  H01L21/02 ,  G11C11/404 ,  H10B12/00

CPC分类号： H10B53/20 ,  G11C11/221 ,  G11C11/2255 ,  G11C11/2257 ,  G11C11/4045 ,  H01L21/02197 ,  H01L28/56 ,  H10B12/056 ,  H10B12/36

摘要： To compensate switching of a dielectric component of a non-linear polar material based capacitor, an explicit dielectric capacitor is added to a memory bit-cell and controlled by a signal opposite to the signal driven on a plate-line.

公开(公告)号：US20230162974A1

公开(公告)日：2023-05-25

申请号：US18100520

申请日：2023-01-23

申请人： CubicPV Inc.

发明人： Michael D. Irwin ,  Michael Holland ,  Nicholas Anderson

IPC分类号： H01L21/02 ,  C30B29/22 ,  C07F7/24 ,  H10K10/29 ,  H10K10/46 ,  H10K30/10 ,  H10K30/00

CPC分类号： H01L21/02197 ,  C30B29/22 ,  C07F7/24 ,  H10K10/29 ,  H10K10/478 ,  H10K30/10 ,  H10K30/451 ,  C07B2200/13 ,  C01P2002/34

摘要： A perovskite material that has a perovskite crystal lattice having a formula of CxMyXz, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.

公开(公告)号：US20180337055A1

公开(公告)日：2018-11-22

申请号：US15909980

申请日：2018-03-01

申请人： Renesas Electronics Corporation

发明人： Tadashi YAMAGUCHI

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L27/11568 ,  H01L21/02

CPC分类号： H01L29/40111 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02197 ,  H01L21/02345 ,  H01L21/02356 ,  H01L21/3105 ,  H01L27/11507 ,  H01L27/11568 ,  H01L27/1159 ,  H01L28/40 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

摘要： To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties. After deposition of a hafnium oxide film on a semiconductor substrate via an insulating film, the semiconductor substrate is exposed to microwaves to selectively heat the hafnium oxide film. This makes it possible to form a larger number of orthorhombic crystals in the crystals of the hafnium oxide film. The hafnium oxide film thus obtained can therefore exhibit ferroelectric properties without adding, thereto, an impurity such as Si. This means that the hafnium oxide film having a reverse size effect can be used as a ferroelectric film of a ferroelectric memory cell and contributes to the manufacture of a miniaturized ferroelectric memory cell.

公开(公告)号：US09905417B2

公开(公告)日：2018-02-27

申请号：US14787915

申请日：2014-05-14

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Toshihiro Doi ,  Hideaki Sakurai ,  Nobuyuki Soyama

IPC分类号： H01L21/02 ,  H01L49/02 ,  C09D133/26

CPC分类号： H01L21/02197 ,  C09D133/26 ,  H01L21/02205 ,  H01L21/02282 ,  H01L28/55

摘要： A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.

公开(公告)号：US09816203B2

公开(公告)日：2017-11-14

申请号：US14717919

申请日：2015-05-20

申请人： ASM International N.V.

发明人： Tom E. Blomberg

IPC分类号： C30B23/02 ,  C30B29/32 ,  C30B1/02 ,  C30B25/18 ,  C30B29/68 ,  C30B1/04 ,  C30B29/24 ,  H01L21/02

CPC分类号： C30B29/32 ,  C30B1/02 ,  C30B1/04 ,  C30B25/18 ,  C30B25/186 ,  C30B29/24 ,  C30B29/68 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02318 ,  Y10T428/31678

摘要： Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO.

公开(公告)号：US20170309488A1

公开(公告)日：2017-10-26

申请号：US15493995

申请日：2017-04-21

申请人： National Institute of Advanced Industrial Science and Technology ,  WACOM R&D Corporation

发明人： Shigeki SAKAI ,  Mitsue TAKAHASHI ,  Masaki KUSUHARA ,  Masayuki TODA ,  Masaru UMEDA ,  Yoshikazu SASAKI

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L29/51 ,  H01L29/78 ,  H01L29/49 ,  H01L27/1159

CPC分类号： H01L29/40111 ,  G11C11/223 ,  H01L21/02181 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02356 ,  H01L27/1159 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6684 ,  H01L29/78391

摘要： [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm

公开(公告)号：US09780186B2

公开(公告)日：2017-10-03

申请号：US14405538

申请日：2013-05-30

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Shigeki Sakai ,  Wei Zhang ,  Mitsue Takahashi

IPC分类号： H01L29/51 ,  H01L21/28 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L21/324 ,  H01L29/49

CPC分类号： H01L29/516 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/28194 ,  H01L21/28291 ,  H01L21/324 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6684 ,  H01L29/78391

摘要： Provided is a ferroelectric field effect transistor (FeFET) which has a wide memory window even if the ferroelectric film thickness is 200 nm or less, and which has excellent data retention characteristics, pulse rewriting endurance and the like. An FeFET which has a structure wherein an insulating body (11) and a gate electrode conductor (4) are sequentially laminated in this order on a semiconductor base (10) that has a source region (12) and a drain region (13). The insulating body (11) is configured by laminating a first insulating body (1) and a second insulating body (2) in this order on the base (10), and the second insulating body (2) is mainly composed of an oxide of strontium, calcium, bismuth and tantalum.