公开(公告)号：US09748181B1

公开(公告)日：2017-08-29

申请号：US15168479

申请日：2016-05-31

Applicant: Texas Instruments Incorporated

Inventor： Ricky Alan Jackson ,  Sudtida Lavangkul ,  Erika Lynn Mazotti

IPC: H01L23/544 ,  H01L23/00 ,  H01L21/78 ,  H01L23/31 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/562 ,  H01L23/3171 ,  H01L23/528 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/585

Abstract: An example apparatus includes a plurality of scribe streets arranged in rows and columns on the surface of a semiconductor wafer; and a plurality of integrated circuit dies arranged in rows and columns and spaced apart by the scribe streets. Each integrated circuit die includes plurality of active areas; a plurality of insulator layers overlying the active areas; a plurality of conductor layers interspersed with and separated by ones of the insulator layers; and a passivation layer overlying a top portion of the uppermost one of the conductor layers. A scribe seal in a scribe region surrounds the periphery of the integrated circuit dies, the scribe seal covered by the passivation layer; and a crack arrest structure is located surrounding and spaced from the scribe seal, and including an opening in the passivation layer that extends to and exposes the upper surface of the crack arrest structure. Methods are disclosed.

公开(公告)号：US20170234942A1

公开(公告)日：2017-08-17

申请号：US15042119

申请日：2016-02-11

Applicant: Texas Instruments Incorporated

Inventor： Sudtida Lavangkul ,  Sopa Chevacharoenkul

IPC: G01R33/04

CPC classification number: G01R33/04

Abstract: An integrated fluxgate device contains a fluxgate magnetometer sensor with a fluxgate core of a thin film magnetic material. Metal windings are disposed above and below the fluxgate core. The fluxgate core has at least one end with a width of at least 5 microns. The fluxgate magnetometer sensor has a crack-resistant structure at the end of the fluxgate core. The crack-resistant structure includes at least one of a laterally rounded contour of the fluxgate core at the end having corner radii of at least 2 microns, a lower metal end structure in the lower dielectric layer extending under the end of the fluxgate core, or an upper metal end structure in the upper dielectric layer extending over the end of the fluxgate core.

公开(公告)号：US20170213956A1

公开(公告)日：2017-07-27

申请号：US15003856

申请日：2016-01-22

Applicant: Texas Instruments Incorporated

Inventor： Mona M. Eissa ,  Mark R. Kimmich ,  Sudtida Lavangkul ,  Sopa Chevacharoenkul ,  Mark L. Jenson

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L27/0617 ,  G01R33/04 ,  G01R33/05

Abstract: An integrated circuit has a substrate, a circuit, a core structure, a first encapsulation layer, a second encapsulation layer, and an oxide layer. The circuit includes transistors with active regions developed on the substrate and a metal layer formed above the active regions to provide interconnections for the transistors. The core structure is formed above the metal layer. The first encapsulation layer covers the core structure, and it has a first thermal expansion coefficient. The second encapsulation layer covers the first encapsulation layer over the core structure, and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer is formed above the second encapsulation layer. The oxide layer includes an oxide thickness sufficient to mitigate a thermal stress between the first and second encapsulation layers.

公开(公告)号：US09577185B1

公开(公告)日：2017-02-21

申请号：US15141003

申请日：2016-04-28

Applicant: Texas Instruments Incorporated

Inventor： Dok Won Lee ,  Sudtida Lavangkul ,  Erika Lynn Mazotti ,  William David French

IPC: H01L27/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L23/528 ,  H01L23/522 ,  G01R33/04

CPC classification number: H01F27/346 ,  G01R33/0029 ,  G01R33/04 ,  H01F27/24 ,  H01F27/28 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12

Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.

Abstract translation: 集成磁通门装置，其包括磁芯，励磁线圈和感测线圈。 磁芯具有纵向边缘和末端边缘。 励磁线圈围绕磁芯的纵向边缘缠绕，并且励磁线圈在端子边缘附近具有第一数量的励磁线圈构件。 感测线圈围绕磁芯的纵向边缘缠绕，并且感测线圈在端子边缘附近具有第二数量的感测线圈构件。 为了减小磁通门噪声，第二数量的感测线圈构件可以小于在端子边缘附近的第一数量的励磁线圈构件。