公开(公告)号：US20200168825A1

公开(公告)日：2020-05-28

申请号：US16559341

申请日：2019-09-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Marcus Johannes Henricus van Dal ,  Timothy Vasen ,  Gerben Doornbos

IPC: H01L51/05 ,  H01L27/28 ,  H01L51/00

Abstract: The current disclosure describes techniques for forming semiconductor structures having multiple semiconductor strips configured as channel portions. In the semiconductor structures, diffusion break structures are formed after the gate structures are formed so that the structural integrity of the semiconductor strips adjacent to the diffusion break structures will not be compromised by a subsequent gate formation process. The diffusion break extends downward from an upper surface until all the semiconductor strips of the adjacent channel portions are truncated by the diffusion break.