公开(公告)号：US20210028208A1

公开(公告)日：2021-01-28

申请号：US17070543

申请日：2020-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yimin Huang

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor, including a first photodiode and a second photodiode disposed in a semiconductor substrate. A floating diffusion node is disposed along a frontside of the semiconductor substrate and between the first and second photodiodes. A partial backside deep trench isolation (BDTI) structure is disposed within the semiconductor substrate and between the first and second photodiodes. The partial BDTI extends from a backside of the semiconductor substrate and is spaced from the floating diffusion node. A full BDTI structure extends from the backside of the semiconductor substrate to the frontside of the semiconductor substrate.

公开(公告)号：US20200176492A1

公开(公告)日：2020-06-04

申请号：US16364508

申请日：2019-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yimin Huang

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor, including a first photodiode and a second photodiode disposed in a semiconductor substrate. A floating diffusion node is disposed along a frontside of the semiconductor substrate and between the first and second photodiodes. A partial backside deep trench isolation (BDTI) structure is disposed within the semiconductor substrate and between the first and second photodiodes. The partial BDTI extends from a backside of the semiconductor substrate and is spaced from the floating diffusion node. A full BDTI structure extends from the backside of the semiconductor substrate to the frontside of the semiconductor substrate.

公开(公告)号：US20190165026A1

公开(公告)日：2019-05-30

申请号：US15962130

申请日：2018-04-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Chia Kuo ,  Jhy-Jyi Sze ,  Tung-Ting Wu ,  Yimin Huang

IPC: H01L27/146

Abstract: The present disclosure relates to a semiconductor device having a lateral resonance structure to coherently reflect light toward the image sensor. The semiconductor device includes an image sensing element arranged within a substrate. A radiation absorption region is arranged within the substrate and above the image sensor, and contains an array of protrusions having a characteristic dimension and an outer border. A resonant structure containing a plurality of deep trench isolation (DTI) structures is disposed on opposing sides of the image sensing element. The (DTI) structures surround the outer border of the array of protrusions. An inner surface of the DTI structure is laterally spaced apart from the outer border of the array of protrusions by a reflective length based on the characteristic dimension of the array of protrusions, thus affecting coherent reflection of light back toward the image sensor.

公开(公告)号：US10128293B2

公开(公告)日：2018-11-13

申请号：US15658588

申请日：2017-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yimin Huang ,  Jhy-Jyi Sze ,  Alexander Kalnitsky

IPC: H01L27/146

Abstract: A pixel sensor device is disclosed. The device includes a shallow trench isolation structure, a well region and a backside isolation structure. The well region and diode region is adjacent to the shallow trench isolation structure. The backside isolation structure is self-aligned with and arranged over the shallow trench isolation structure. The backside isolation structure is adjacent to the diode region.

公开(公告)号：US20170062495A1

公开(公告)日：2017-03-02

申请号：US14836019

申请日：2015-08-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yimin Huang ,  Jhy-Jyi Sze ,  Alexander Kalnitsky

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: A pixel sensor device is disclosed. The device includes a shallow trench isolation structure, a well region and a backside isolation structure. The well region and diode region is adjacent to the shallow trench isolation structure. The backside isolation structure is self-aligned with and arranged over the shallow trench isolation structure. The backside isolation structure is adjacent to the diode region.An immersion lithographic arrangement is disclosed that compensates for immersion tool drift.

Abstract translation: 公开了一种补偿浸没式工具漂移的浸没式光刻布置。

公开(公告)号：US20170053955A1

公开(公告)日：2017-02-23

申请号：US15345868

申请日：2016-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jhy-Jyi Sze ,  Alexander Kalnitsky ,  Yimin Huang

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14656 ,  H01L27/14685 ,  H01L27/14689

Abstract: A method for manufacturing a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor with a vertical transfer gate structure for improved quantum efficiency (QE) and global shutter efficiency (GSE) is provided. A sacrificial dielectric layer is formed over a semiconductor region. A first etch is performed into the sacrificial dielectric layer to form an opening exposing a photodetector in the semiconductor region. A semiconductor column is formed in the opening. A floating diffusion region (FDR) is formed over the semiconductor column and the sacrificial dielectric layer. A second etch is performed into the sacrificial dielectric layer to remove the sacrificial dielectric layer, and to form a lateral recess between the FDR and the photodetector. A gate is formed filling the lateral recess and laterally spaced from the semiconductor column by a gate dielectric layer. The BSI CMOS image sensor resulting from the method is also provided.

Abstract translation: 提供了一种用于制造具有用于提高量子效率（QE）和全局快门效率（GSE））的垂直传输门结构的背面照明（BSI）互补金属氧化物半导体（CMOS）图像传感器的方法。 在半导体区域上形成牺牲电介质层。 执行第一蚀刻到牺牲介电层中以形成暴露半导体区域中的光电检测器的开口。 在开口中形成半导体柱。 在半导体柱和牺牲电介质层上形成浮动扩散区（FDR）。 对牺牲电介质层进行第二蚀刻以去除牺牲电介质层，并且在FDR和光电检测器之间形成横向凹槽。 形成一个浇口，其通过栅介质层填充横向凹槽并与半导体柱横向隔开。 还提供了由该方法产生的BSI CMOS图像传感器。