公开(公告)号：US11075242B2

公开(公告)日：2021-07-27

申请号：US15962130

申请日：2018-04-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Chia Kuo ,  Jhy-Jyi Sze ,  Tung-Ting Wu ,  Yimin Huang

IPC: H01L27/146 ,  H01L31/0236 ,  H01L31/0232

Abstract: The present disclosure relates to a semiconductor device having a lateral resonance structure to coherently reflect light toward the image sensor. The semiconductor device includes an image sensing element arranged within a substrate. A radiation absorption region is arranged within the substrate and above the image sensor, and contains an array of protrusions having a characteristic dimension and an outer border. A resonant structure containing a plurality of deep trench isolation (DTI) structures is disposed on opposing sides of the image sensing element. The (DTI) structures surround the outer border of the array of protrusions. An inner surface of the DTI structure is laterally spaced apart from the outer border of the array of protrusions by a reflective length based on the characteristic dimension of the array of protrusions, thus affecting coherent reflection of light back toward the image sensor.

公开(公告)号：US10991746B2

公开(公告)日：2021-04-27

申请号：US16352164

申请日：2019-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Ting Wu ,  Jhy-Jyi Sze ,  Yimin Huang

IPC: H01L27/146 ,  H01L31/036

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensing element disposed within a pixel region of a substrate. A plurality of conductive interconnect layers are disposed within a dielectric structure arranged along a first side of the substrate. A second side of the substrate includes a plurality of interior surfaces arranged directly over the image sensing element. The plurality of interior surfaces respectively include a substantially flat surface that extends along a plane.

公开(公告)号：US20210098392A1

公开(公告)日：2021-04-01

申请号：US16589460

申请日：2019-10-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Ting Wu ,  Chen-Jong Wang ,  Jen-Cheng Liu ,  Yimin Huang ,  Chin-Chia Kuo

IPC: H01L23/58 ,  H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a crack-stop structure disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. Photodetectors are disposed within the semiconductor substrate and are laterally spaced within a device region. An interconnect structure is disposed along the front-side surface. The interconnect structure includes a seal ring structure. A crack-stop structure is disposed within the semiconductor substrate and overlies the seal ring structure. The crack-stop structure continuously extends around the device region.

公开(公告)号：US20210265412A1

公开(公告)日：2021-08-26

申请号：US17236343

申请日：2021-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Ting Wu ,  Jhy-Jyi Sze ,  Yimin Huang

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an image sensing integrated chip. The image sensing integrated chip includes a semiconductor substrate having sidewalls defining one or more trenches on opposing sides of a region of the semiconductor substrate. One or more dielectrics are disposed within the one or more trenches. The semiconductor substrate has a plurality of flat surfaces arranged between the one or more trenches. Adjacent ones of the plurality of flat surfaces define a plurality of triangular shaped protrusions and alternative ones of the plurality of flat surfaces are substantially parallel to one another, as viewed along a cross-sectional view.

公开(公告)号：US11670663B2

公开(公告)日：2023-06-06

申请号：US17236343

申请日：2021-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Ting Wu ,  Jhy-Jyi Sze ,  Yimin Huang

IPC: H01L27/146 ,  H01L31/036

CPC classification number: H01L27/14636 ,  H01L27/14607 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/036

Abstract: The present disclosure, in some embodiments, relates to an image sensing integrated chip. The image sensing integrated chip includes a semiconductor substrate having sidewalls defining one or more trenches on opposing sides of a region of the semiconductor substrate. One or more dielectrics are disposed within the one or more trenches. The semiconductor substrate has a plurality of flat surfaces arranged between the one or more trenches. Adjacent ones of the plurality of flat surfaces define a plurality of triangular shaped protrusions and alternative ones of the plurality of flat surfaces are substantially parallel to one another, as viewed along a cross-sectional view.

公开(公告)号：US11348881B2

公开(公告)日：2022-05-31

申请号：US16589460

申请日：2019-10-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Ting Wu ,  Chen-Jong Wang ,  Jen-Cheng Liu ,  Yimin Huang ,  Chin-Chia Kuo

IPC: H01L23/58 ,  H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a crack-stop structure disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. Photodetectors are disposed within the semiconductor substrate and are laterally spaced within a device region. An interconnect structure is disposed along the front-side surface. The interconnect structure includes a seal ring structure. A crack-stop structure is disposed within the semiconductor substrate and overlies the seal ring structure. The crack-stop structure continuously extends around the device region.

公开(公告)号：US20190165026A1

公开(公告)日：2019-05-30

申请号：US15962130

申请日：2018-04-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Chia Kuo ,  Jhy-Jyi Sze ,  Tung-Ting Wu ,  Yimin Huang

IPC: H01L27/146

Abstract: The present disclosure relates to a semiconductor device having a lateral resonance structure to coherently reflect light toward the image sensor. The semiconductor device includes an image sensing element arranged within a substrate. A radiation absorption region is arranged within the substrate and above the image sensor, and contains an array of protrusions having a characteristic dimension and an outer border. A resonant structure containing a plurality of deep trench isolation (DTI) structures is disposed on opposing sides of the image sensing element. The (DTI) structures surround the outer border of the array of protrusions. An inner surface of the DTI structure is laterally spaced apart from the outer border of the array of protrusions by a reflective length based on the characteristic dimension of the array of protrusions, thus affecting coherent reflection of light back toward the image sensor.