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31.
公开(公告)号:US20180090425A1
公开(公告)日:2018-03-29
申请号:US15823786
申请日:2017-11-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Tseng , Ying-Hao Kuo , Kuo-Chung Yee
IPC: H01L23/498 , H01L23/373 , H01L21/48 , H01L23/433 , H01L21/56 , H01L23/31
CPC classification number: H01L23/49816 , H01L21/4871 , H01L21/568 , H01L23/3128 , H01L23/373 , H01L23/4334 , H01L2924/00 , H01L2924/0002
Abstract: A method of forming a semiconductor package includes growing a layer of carbon nano material on a chip. The chip has a first surface and a second surface and the layer of carbon nano material is grown on the first surface of the chip. The layer of carbon nano material is configured to provide a path through which heat generated from the chip is dissipated. A substrate is attached to the second surface of the chip. A molding compound is formed above the substrate to encapsulate the chip and the layer of carbon nano material.
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公开(公告)号:US09568677B2
公开(公告)日:2017-02-14
申请号:US13905404
申请日:2013-05-30
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
Inventor: Chun-Hao Tseng , Ying-Hao Kuo , Hai-Ching Chen , Tien-I Bao
CPC classification number: G02B6/136 , G02B6/12004 , G02B6/43
Abstract: Embodiments of forming a waveguide structure are provided. The waveguide structure includes a substrate, and the substrate has an interconnection region and a waveguide region. The waveguide structure also includes a trench formed in the substrate, and the trench has a sloping sidewall surface and a substantially flat bottom. The waveguide structure further includes a bottom cladding layer formed on the substrate, and the bottom cladding layer extends from the interconnection region to the waveguide region, and the bottom cladding layer acts as an insulating layer in the interconnection region. The waveguide structure further includes a metal layer formed on the bottom cladding layer on the sloping sidewall surface.
Abstract translation: 提供形成波导结构的实施例。 波导结构包括基板,并且基板具有互连区域和波导区域。 波导结构还包括形成在衬底中的沟槽,并且沟槽具有倾斜的侧壁表面和基本平坦的底部。 波导结构还包括形成在基板上的底部包层,并且底部包层从互连区域延伸到波导区域,并且底部包层用作互连区域中的绝缘层。 波导结构还包括形成在倾斜侧壁表面上的底部包层上的金属层。
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