公开(公告)号：US20200013636A1

公开(公告)日：2020-01-09

申请号：US16575698

申请日：2019-09-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Tseng ,  Ying-Hao Kuo ,  Kuo-Chung Yee

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/36 ,  H01L23/373 ,  H01L23/31 ,  H01L21/56 ,  H01L25/065 ,  H01L25/00

Abstract: A method of forming a semiconductor package includes providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate. An insulating barrier layer is deposited above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer. A thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip.

公开(公告)号：US20190025514A1

公开(公告)日：2019-01-24

申请号：US16141621

申请日：2018-09-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Tseng ,  Ying-Hao Kuo ,  Kai-Fang Cheng ,  Hai-Ching Chen ,  Tien-I Bao

IPC: G02B6/132 ,  H01L21/56 ,  G02B6/136 ,  H01L29/06 ,  H01L23/31 ,  G02B6/122 ,  H01L21/48 ,  G02B6/138 ,  G02B6/12

Abstract: An apparatus comprises a substrate having a plateau region and a trench region, a metal layer over the plateau region, a semiconductor component over the trench region, wherein a gap is between the plateau region and the semiconductor component, an adhesion promoter layer over the plateau region, the semiconductor component and the gap, a dielectric layer over the adhesion promoter layer and a bonding interface formed between the adhesion promoter layer and the dielectric layer, wherein the bonding interface comprises a chemical structure comprising a first dielectric material of the adhesion promoter layer and a second dielectric material of the dielectric layer.

公开(公告)号：US20170140945A1

公开(公告)日：2017-05-18

申请号：US15418949

申请日：2017-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Tseng ,  Ying-Hao Kuo ,  Kuo-Chung Yee

IPC: H01L21/48 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56 ,  H01L23/00 ,  H01L25/065 ,  H01L23/373

Abstract: A method of forming a semiconductor package includes providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate. An insulating barrier layer is deposited above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer. A thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip.

公开(公告)号：US11574886B2

公开(公告)日：2023-02-07

申请号：US17104588

申请日：2020-11-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Tseng ,  Ying-Hao Kuo ,  Kuo-Chung Yee

IPC: H01L23/31 ,  H01L23/42 ,  H01L23/00 ,  H01L23/373 ,  H01L21/56 ,  H01L23/433

Abstract: The present disclosure, in some embodiments, relates to a semiconductor package. The semiconductor package includes a first chip and a second chip attached to a substrate. A thermal conductivity layer is attached to the first chip. A molding compound laterally surrounds the first chip, the second chip, and the thermal conductivity layer. The second chip extends from the substrate to an imaginary horizontally extending line that extends along a horizontally extending surface of the thermal conductivity layer facing away from the substrate. The imaginary horizontally extending line is parallel to the horizontally extending surface.

公开(公告)号：US20210202270A1

公开(公告)日：2021-07-01

申请号：US17205146

申请日：2021-03-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Tseng ,  Ying-Hao Kuo ,  Kuo-Chung Yee

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/36 ,  H01L23/373 ,  H01L23/31 ,  H01L21/56 ,  H01L25/065 ,  H01L25/00

Abstract: A semiconductor package includes a wafer and at least one chip attached on first portions of an upper surface of the wafer. Further, the semiconductor package includes an insulating barrier layer, a thermally conductive layer, and a heat sink. The insulating barrier layer is arranged over the at least one chip attached on first portions of an upper surface of the wafer. The thermally conductive layer is arranged over the insulating barrier layer and at least partially encapsulates the at least one chip. The heat sink is arranged over the thermally conductive layer.

公开(公告)号：US20200020658A1

公开(公告)日：2020-01-16

申请号：US16578358

申请日：2019-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Tseng ,  Ying-Hao Kuo ,  Kuo-Chung Yee

IPC: H01L23/00 ,  H01L23/42 ,  H01L23/373

Abstract: The present disclosure, in some embodiments, relates to a method of forming a semiconductor package. The method may be performed by attaching a first thermal conductivity layer to an upper surface of a first chip, and attaching a second thermal conductivity layer to an upper surface of a second chip. A first support substrate is attached to lower surfaces of the first chip and the second chip. A molding compound is formed over the first support substrate and laterally surrounds the first chip and the second chip. The first support substrate is replaced with a package substrate after forming the molding compound over the first support substrate.

公开(公告)号：US10510707B2

公开(公告)日：2019-12-17

申请号：US15966426

申请日：2018-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Tseng ,  Ying-Hao Kuo ,  Kuo-Chung Yee

IPC: H01L23/42 ,  H01L23/00 ,  H01L23/373

Abstract: A method of forming a semiconductor package includes attaching a thermal conductivity layer to a chip. The chip has a first surface and a second surface. The thermal conductivity layer is attached to the first surface of the chip. The thermal conductivity layer provides a path through which heat generated from the chip is dissipated to the ambient. A substrate is attached to the second surface of the chip after attaching the thermal conductivity layer to the chip. A molding compound is formed to encapsulate the chip and the thermal conductivity layer.

公开(公告)号：US09651736B2

公开(公告)日：2017-05-16

申请号：US14477917

申请日：2014-09-05

Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

Inventor： Jay Lai ,  Ying-Hao Kuo ,  Hai-Ching Chen ,  Tien-I Bao

IPC: G02B6/122 ,  G03F7/00 ,  G02B6/42 ,  G02B6/12 ,  B05D5/06

CPC classification number: G02B6/122 ,  B05D5/06 ,  G02B6/425 ,  G02B6/4298 ,  G02B2006/12102 ,  G02B2006/12173 ,  G03F7/0002 ,  Y10T428/24612

Abstract: Some embodiments relate to a method of processing a workpiece. The workpiece includes a first surface region having a first wettability coefficient, and a second surface region having a second wettability coefficient that differs from the first wettability coefficient. A liquid, which corresponds to an optical structure, is dispensed on the first and second surface regions of the workpiece, wherein the liquid self-aligns to the second surface region due to the difference between the first and second wettability coefficients. The self-aligned liquid is hardened to form the optical structure.

公开(公告)号：US20140376858A1

公开(公告)日：2014-12-25

申请号：US14477917

申请日：2014-09-05

Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

Inventor： Jay Lai ,  Ying-Hao Kuo ,  Hai-Ching Chen ,  Tien-I Bao

IPC: G02B6/122 ,  G02B6/42

CPC classification number: G02B6/122 ,  B05D5/06 ,  G02B6/425 ,  G02B6/4298 ,  G02B2006/12102 ,  G02B2006/12173 ,  G03F7/0002 ,  Y10T428/24612

Abstract: Some embodiments relate to a method of processing a workpiece. The workpiece includes a first surface region having a first wettability coefficient, and a second surface region having a second wettability coefficient that differs from the first wettability coefficient. A liquid, which corresponds to an optical structure, is dispensed on the first and second surface regions of the workpiece, wherein the liquid self-aligns to the second surface region due to the difference between the first and second wettability coefficients. The self-aligned liquid is hardened to form the optical structure.

Abstract translation: 一些实施例涉及加工工件的方法。 工件包括具有第一润湿性系数的第一表面区域和具有与第一润湿性系数不同的第二润湿性系数的第二表面区域。 对应于光学结构的液体被分配在工件的第一和第二表面区域上，其中由于第一和第二润湿性系数之间的差异，液体自对准到第二表面区域。 自对准液体被硬化以形成光学结构。

公开(公告)号：US08828484B2

公开(公告)日：2014-09-09

申请号：US13751540

申请日：2013-01-28

Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

Inventor： Jay Lai ,  Ying-Hao Kuo ,  Hai-Ching Chen ,  Tien-I Bao

IPC: B05D5/06

CPC classification number: G02B6/122 ,  B05D5/06 ,  G02B6/425 ,  G02B6/4298 ,  G02B2006/12102 ,  G02B2006/12173 ,  G03F7/0002 ,  Y10T428/24612

Abstract: Some embodiments relate to a method of processing a workpiece. The workpiece includes a first surface region having a first wettability coefficient, and a second surface region having a second wettability coefficient that differs from the first wettability coefficient. A liquid, which corresponds to an optical structure, is dispensed on the first and second surface regions of the workpiece, wherein the liquid self-aligns to the second surface region due to the difference between the first and second wettability coefficients. The self-aligned liquid is hardened to form the optical structure.

Abstract translation: 一些实施例涉及加工工件的方法。 工件包括具有第一润湿性系数的第一表面区域和具有与第一润湿性系数不同的第二润湿性系数的第二表面区域。 对应于光学结构的液体被分配在工件的第一和第二表面区域上，其中由于第一和第二润湿性系数之间的差异，液体自对准到第二表面区域。 自对准液体被硬化以形成光学结构。