公开(公告)号：US20050179070A1

公开(公告)日：2005-08-18

申请号：US11098747

申请日：2005-04-04

申请人： Craig Salling ,  Brian Huber

发明人： Craig Salling ,  Brian Huber

IPC分类号： G11C11/22 ,  H01L21/8246 ,  H01L27/115 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/78391

摘要： Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells for memory devices and electronic systems. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb.

摘要翻译： 耗尽型铁电晶体管适用于存储器件和电子系统的非易失性存储单元。 描述了具有夹在晶体管的位线和源极/漏极区之间的二极管的各种实施例，用于增加读取干扰的余量。

公开(公告)号：US20050024920A1

公开(公告)日：2005-02-03

申请号：US10926623

申请日：2004-08-26

申请人： Craig Salling ,  Brian Huber

发明人： Craig Salling ,  Brian Huber

IPC分类号： G11C11/22 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/78391

摘要： Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

公开(公告)号：US20050013157A1

公开(公告)日：2005-01-20

申请号：US10898867

申请日：2004-07-26

申请人： Craig Salling ,  Brian Huber

发明人： Craig Salling ,  Brian Huber

IPC分类号： G11C11/22 ,  H01L21/8246 ,  H01L27/115 ,  G11C11/14

CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/11585 ,  H01L27/1159 ,  H01L29/78391

摘要： Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

公开(公告)号：US06337209B1

公开(公告)日：2002-01-08

申请号：US08154712

申请日：1993-11-19

申请人： Brian Huber ,  Cynthia A. Richards

发明人： Brian Huber ,  Cynthia A. Richards

IPC分类号： C12N510

CPC分类号： C12N15/86 ,  A61K31/70 ,  A61K31/711 ,  A61K35/768 ,  A61K38/50 ,  A61K48/00 ,  C07H19/06 ,  C07H19/16 ,  C07H21/00 ,  C07K14/765 ,  C12N7/00 ,  C12N9/12 ,  C12N9/1211 ,  C12N15/85 ,  C12N2740/13043 ,  C12N2740/13045 ,  C12N2740/13051 ,  C12N2740/13062 ,  C12N2810/60 ,  C12N2830/008 ,  C12N2830/85 ,  C12N2840/20 ,  C12Y305/04001 ,  A61K2300/00

摘要： Novel molecular chimaeras produced by recombinant DNA techniques are described. They comprise a target-tissue specific transcriptional regulatory sequence (TRS) linked and controlling the expression of a heterologous enzyme, for example Varicella Zoster Virus Thymidine Kinase (VZV TK) or non-mammaliam Cytosine Deaminase(CD). A molecular chimaera is packaged into a synthetic retroviral particle that is capable of infecting mammalian tissue. This, in turn, may be administered to a host, and the TRS will be selectively transcriptionally activated in the target tissue (for example cancerous cells). Administration of compounds that are selectively metabolised by the enzyme produce cytotoxic or cytostatic metabolites in situ thereby selectively killing or arresting the growth of the target cells.

摘要翻译： 描述了通过重组DNA技术产生的新型分子嵌合体。 它们包括连接并控制异源酶的表达的靶组织特异性转录调节序列（TRS），例如水痘带状疱疹病毒胸苷激酶（VZV TK）或非哺乳动物胞嘧啶脱氨酶（CD）。 将分子嵌合体包装成能够感染哺乳动物组织的合成逆转录病毒颗粒。 这又可以施用于宿主，并且TRS将在靶组织（例如癌细胞）中选择性地转录激活。 由酶选择性代谢的化合物的给药原位产生细胞毒性或细胞抑制代谢物，从而选择性地杀死或阻止靶细胞的生长。